CGD1042HI 1 GHz, 22 dB gain GaAs high output power doubler Rev. 01 — 21 September 2009 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies. 1.2 Features n n n n n n n n n Excellent linearity Superior levels of ESD protection Extremely low noise Excellent return loss properties Gain compensation over temperature Rugged construction Unconditionally stable Thermally optimized design Compliant to Directive 2002/95/EC, regarding Restriction of the use of certain Hazardous Substances (RoHS) n Integrated ring wave surge protection 1.3 Applications n CATV systems operating in the 40 MHz to 1003 MHz frequency range 1.4 Quick reference data Table 1. Quick reference data Bandwidth 40 MHz to 1003 MHz; VB = 24 V (DC); ZS = ZL = 75 Ω; Tmb = 35 °C; unless otherwise specified. Symbol Parameter power gain Gp CTB CCN Itot composite triple beat carrier-to-composite noise total current Conditions Min Typ Max Unit f = 50 MHz - 21.5 - f = 1003 MHz 22 22.7 23.5 dB dB Vo = 56.4 dBmV at 1003 MHz [1] - −75 −65 dBc Vo = 56.4 dBmV at 1003 MHz [1] 57 63 - dBc [2] - 440 460 mA [1] 79 NTSC channels [f = 54 MHz to 550 MHz] + 75 digital channels [f = 550 MHz to 1003 MHz] (−6 dB offset); tilt extrapolated to 13.5 dB at 1003 MHz. [2] Direct Current (DC). CGD1042HI NXP Semiconductors 1 GHz, 22 dB gain GaAs high output power doubler 2. Pinning information Table 2. Pinning Pin Description 1 input 2, 3 common Simplified outline Graphic symbol 5 1 3 5 7 9 1 5 +VB 7, 8 common 9 output 9 2 3 7 8 sym095 3. Ordering information Table 3. Ordering information Type number CGD1042HI Package Name Description Version - rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 × 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VB supply voltage Vi(RF) RF input voltage VESD electrostatic discharge voltage single tone Human Body Model (HBM); According JEDEC standard 22-A114E Biased; According IEC61000-4-2 Unit - 30 V - 75 dBmV - 2000 V - 1500 V Tstg storage temperature −40 +100 °C Tmb mounting base temperature −20 +100 °C [1] The ESD pulse of 2000 V corresponds to a class 2 sensitivity level. CGD1042HI_1 Product data sheet [1] Min Max © NXP B.V. 2009. All rights reserved. Rev. 01 — 21 September 2009 2 of 7 CGD1042HI NXP Semiconductors 1 GHz, 22 dB gain GaAs high output power doubler 5. Characteristics Table 5. Characteristics Bandwidth 40 MHz to 1003 MHz; VB = 24 V (DC); ZS = ZL = 75 Ω; Tmb = 35 °C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit f = 50 MHz - 21.5 - dB Gp power gain 22 22.7 23.5 dB SLsl slope straight line f = 40 MHz to 1003 MHz [1] 0.5 - 2 dB FL flatness of frequency response f = 40 MHz to 1003 MHz [2] - - 1 dB RLin input return loss f = 40 MHz to 160 MHz 20 - - dB f = 160 MHz to 320 MHz 20 - - dB f = 320 MHz to 640 MHz 19 - - dB f = 640 MHz to 870 MHz 17 - - dB f = 870 MHz to 1003 MHz 16 - - dB f = 1003 MHz RLout NF output return loss noise figure f = 40 MHz to 160 MHz 20 - - dB f = 160 MHz to 320 MHz 20 - - dB f = 320 MHz to 640 MHz 19 - - dB f = 640 MHz to 870 MHz 18 - - dB f = 870 MHz to 1003 MHz 17 - - dB f = 50 MHz - 4.6 5.6 dB f = 1003 MHz - 5.5 6.5 dB [3] - 440 460 mA Vo = 56.4 dBmV at 1003 MHz [4] - −75 −65 dBc composite second-order distortion Vo = 56.4 dBmV at 1003 MHz [4] - −77 −65 dBc Vo = 56.4 dBmV at 1003 MHz [4] - −68 - dB Vo = 56.4 dBmV at 1003 MHz [4] 57 63 - dBc Vo = 58.4 dBmV at 1003 MHz [5] - −70 - dBc composite second-order distortion Vo = 58.4 dBmV at 1003 MHz [5] - −75 - dBc Vo = 58.4 dBmV at 1003 MHz [5] - −65 - dB total current Itot 79 NTSC channels + 75 digital channels CTB CSO Xmod CCN composite triple beat cross modulation carrier-to-composite noise 79 NTSC channels CTB CSO Xmod composite triple beat cross modulation [1] Gp at 1003 MHz minus Gp at 40 MHz. [2] Flatness is defined as peak deviation to straight line. [3] Direct Current (DC). [4] 79 NTSC channels [f = 54 MHz to 550 MHz] + 75 digital channels [f = 550 MHz to 1003 MHz] (−6 dB offset); tilt extrapolated to 13.5 dB at 1003 MHz. [5] 79 NTSC channels [f = 54 MHz to 550 MHz]; tilt extrapolated to 13.5 dB at 1003 MHz. CGD1042HI_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 21 September 2009 3 of 7 CGD1042HI NXP Semiconductors 1 GHz, 22 dB gain GaAs high output power doubler 6. Package outline Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J D E Z p A2 1 2 3 5 7 8 9 A L F S W c e b w M e1 d U2 q2 Q B y M B q1 x M B y M B p U1 q 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A2 A max. max. mm 20.8 9.1 OUTLINE VERSION b c d D E max. max. max. e e1 F L min. p 4.15 0.51 0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8 3.85 0.38 Q max. q q1 JEDEC JEITA U1 U2 W w x EUROPEAN PROJECTION y Z max. 0.1 3.8 ISSUE DATE 99-02-06 04-02-04 SOT115J Fig 1. S 2.4 38.1 25.4 10.2 4.2 44.75 8.2 6-32 0.25 0.7 44.25 7.8 UNC REFERENCES IEC q2 Package outline SOT115J CGD1042HI_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 21 September 2009 4 of 7 CGD1042HI NXP Semiconductors 1 GHz, 22 dB gain GaAs high output power doubler 7. Abbreviations Table 6. Abbreviations Acronym Description CATV Community Antenna TeleVision ESD ElectroStatic Discharge GaAs Gallium-Arsenide NTSC National Television Standard Committee RF Radio Frequency UNC UNified Coarse 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes CGD1042HI_1 20090921 Product data sheet - - CGD1042HI_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 21 September 2009 5 of 7 CGD1042HI NXP Semiconductors 1 GHz, 22 dB gain GaAs high output power doubler 9. Legal information 9.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 9.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] CGD1042HI_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 21 September 2009 6 of 7 CGD1042HI NXP Semiconductors 1 GHz, 22 dB gain GaAs high output power doubler 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . General description. . . . . . . . . . . . . . . . . . . . . . Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . Quick reference data. . . . . . . . . . . . . . . . . . . . . Pinning information . . . . . . . . . . . . . . . . . . . . . . Ordering information . . . . . . . . . . . . . . . . . . . . . Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . Package outline . . . . . . . . . . . . . . . . . . . . . . . . . Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . Revision history . . . . . . . . . . . . . . . . . . . . . . . . . Legal information. . . . . . . . . . . . . . . . . . . . . . . . Data sheet status . . . . . . . . . . . . . . . . . . . . . . . Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . Contact information. . . . . . . . . . . . . . . . . . . . . . Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1 1 1 1 2 2 2 3 4 5 5 6 6 6 6 6 6 7 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 21 September 2009 Document identifier: CGD1042HI_1