ACT–F2M32A High Speed 64 Megabit Sector Erase FLASH Multichip Module CIRCUIT TECHNOLOGY Features www.aeroflex.com/act1.htm ■ 4 Low Voltage/Power AMD 2M x 8 FLASH Die in One ■ Ready/Busy output (RY/BY) – Hardware method for MCM Package ■ Overall Configuration is 2M x 32 ■ +5V Power Supply / +5V Programing Operation ■ Access Times of 90, 120 and 150 ns ■ Erase/Program Cycles – 100,000 Minimum ■ Sector erase architecture (Each Die) ● 32 uniform sectors of 64 Kbytes each ● Any combination of sectors can be erased. Also supports full chip erase ● Sector group protection is user definable ■ Embedded Erase Algorithims – Automatically pre-programs and erases the die or any sector ■ Embedded Program Algorithims – Automatically programs and verifies data at specified address detection of program or erase cycle completion ■ Hardware RESET pin – Resets internal state machine to the read mode ■ Erase Suspend/Resume – Supports reading or programming data to a sector not being erased ■ Packaging – Hermetic Ceramic ● 68 Lead, .94" x .94" x .140" Single-Cavity Small Outline Gull Wing, Aeroflex code# "F18" (Drops into the 68 Lead JEDEC .99"SQ CQFJ footprint) ■ Internal Decoupling Capacitors for Low Noise Operation ■ Commercial, Industrial and Military Temperature Ranges ■ MIL-PRF-38534 Compliant MCMs Available Pin Description Block Diagram – CQFP(F18) Standard Configuration CE1 I/O0-31 CE2 CE4 A0–20 CE3 RESET WE OE A0 – A20 RY/BY 2Mx8 2Mx8 2Mx8 2Mx8 8 8 8 8 I/O0-7 I/O8-15 I/O16-23 I/O24-31 Data I/O Address Inputs WE Write Enables CE1-4 Chip Enables OE Output Enable RY/BY Ready/Busy RESET Reset VCC Power Supply GND Ground NC Not Connected Block Diagram – CQFP(F18) Pin Description Optional Configuration WE1 CE1 WE2 CE2 WE3 CE3 WE4 CE4 RESET OE A0 – A20 2Mx8 2Mx8 2Mx8 2Mx8 8 8 8 8 I/O0-7 I/O8-15 I/O16-23 I/O24-31 I/O0-31 Data I/O A0–20 Address Inputs WE1-4 Write Enable CE1-4 Chip Enables OE Output Enable RESET Reset VCC Power Supply GND Ground NC Not Connected General Description Utilizing AMD’s Sector Erase Flash Memory Die, the ACT-F2M32A is a high speed, 64 megabit CMOS flash multichip module (MCM) designed for full temperature range, military, space, or high reliability applications. The ACT-F2M32A consists of four high-performance AMD Am29F016 16Mbit (16,777,216 bit) memory die. Each die contains 8 separately write or erase sector groups of 256Kbytes (A sector group consists of 4 adjacent sectors of 64Kbytes each). The command register is written by bringing WE to a logic low level (VIL), while CE is low and OE is high (VIH). Reading is accomplished by chip Enable (CE) and Output Enable (OE) being logically active. Access time grades of 90ns, 120ns and 150ns maximum are standard. eroflex Circuit Technology - Advanced Multichip Modules © SCD1666A REV A 9/12/97 General Description, Cont’d, The ACT-F2M32A is packaged in a hermetically sealed co-fired ceramic 68 lead, .94" SQ Ceramic Gull Wing CQFP package. This allows operation in a military environment temperature range of -55°C to +125°C. The ACT-F2M32A can be programmed (both read and write functions) in-system using the +5.0V VCC power supply. A 12.0V VPP is not required for programming or erase operations. The end of program or erase is detected by the RY/BY pin, Data Polling of DQ7, or by the Toggle bit (DQ6). The ACT-F2M32A also has a hardware RESET pin. When this pin is driven low, execution of any Embedded Program Alggorithm or Embedded Erase Algorithm will be terminated. Each block can be independently erased and programmed 100,000 times at +25°C. For Detail Information regarding the operation of the Am29F016 Sector Erase Flash Memory, see the AMD datasheet (Publication 18805). Aeroflex Circuit Technology 2 SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700 Absolute Maximum Ratings Parameter Range Units Case Operating Temperature Range -55 to +125 °C Storage Temperature Range -65 to +150 °C -2.0 to +7.0 V -2.0 to +13.5 V Voltage with Respect to GND (All pins except A9) Voltage on Pins A9, OE, RESET (2) Vcc Supply Voltage with Respect to Ground Output Short Circuit Current (1) (1) (3) -2.0 to +7.0 V 200 mA Notes: 1. Minimum DC voltage is -0.5V on input/output pins. During Transitions, inputs may undershoot GND to -2.0V for periods up to 20ns. Maximum DC voltage on input/output pins is VCC + 0.5V, which may overshoot to VCC + 2.0V for periods up to 20ns. 2. Minimum DC input voltage on A9 ,OE, RESET pins is -0.5V. During Voltage transitions, A9, OE & RESET may overshoot GND to -2.0V for periods up to 20ns. Maximum DC input voltage on A9 is +12.5V which may overshoot to 14V for periods up to 20ns. 3. No more than one output shorted to ground for no more than 1 second. NOTICE: Stresses above those listed under "Absolute Maximums Rating" may cause permanent damage to the device. These are stress rating only; functional operation beyond the "Operation Conditions" is not recommended and extended exposure beyond the "Operation Conditions" may effect device reliability. Recommended Operating Conditions Symbol VCC Parameter Minimum Maximum +4.5 +5.5 V 0.7 x VCC Vcc + 0.3 V 5V Power Supply Voltage (10%) Units VIH Input High Voltage (CMOS) VIL Input Low Voltage -0.5 +0.8 V Operating Temperature (Military) -55 +125 °C TC Capacitance (f = 1MHz, TC = 25°C, Standard Configuration) Symbol Maximum Units CAD A0 – A20 Capacitance 50 pF COE OE Capacitance 50 pF CCE CE Capacitance 20 pF RESET Capacitance 50 pF WE Capacitance 60 pF RY/BY Capacitance 50 pF I/O0 – I/O31 Capacitance 20 pF CRESET CWE CRY/BY C I/ O Parameter Capacitance Guaranteed by design, but not tested. DC Characteristics – CMOS Compatible (TC = -55°C to +125°C, VCC = +4.5V to + 5.5V, Unless otherwise specified) Parameter Sym Conditions Min Max Units 10 µA Input Load Current IIL VCC = VCCMax., VIN = VCC or GND A9 Leakage Current ILIT VCC = VCCMax., A9 = +12V 50 µA Output Leakage Current ILO VCC = VCCMax., VIN = GND to VCC 10 µA Vcc Active Read Current ICC1 CE = VIL, OE = VIH 160 mA Vcc Active Program/Erase Current (1) ICC2 CE = VIL, OE = VIH 240 mA Vcc Standby Current ICC3 VCC = VCCMax., CE = RESET = VCC ± 0.3V 4 mA Vcc Standby Current (Reset) ICC4 VCC = VCCMax., RESET = VCC ± 0.3V 4 mA Output Low Voltage VOL VCC = VCCMin., IOL = 12 mA 0.45 V Output High Voltage Low VCC Lock-Out Voltage VOH1 VCC = VCCMin., IOH = -2.5 mA 0.85 x VCC VOH2 VCC = VCCMin., IOH = -100 µA VCC 0.4V VLKO 3.2 4.2 V V V Notes: 1. Not 100% tested. Aeroflex Circuit Technology 3 SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700 AC Characteristics – Write/Erase/Program Operations – WE Controlled (TC = -55°C to +125°C, VCC = +4.5V to + 5.5V, Unless otherwise specified) Parameter Parameter Parameter Symbol Symbol Standard JEDEC 90ns Min 120ns Max Min 150ns Max Min Max Units Write Cycle Time tWC tAVAV 90 120 150 ns Address Setup to WE Going Low tAS tAVWL 0 0 0 ns Address Hold Time from CE High tAH tWLAX 45 50 50 ns Data Setup to WE Going High tDS tDVWH 45 50 50 ns tDH tWHDX 0 0 0 ns 0 0 0 ns 10 10 10 ns tGHWL 0 0 0 ns Data Hold Time from WE High Output Enable Hold Time Read Toggle Bit I and Data Polling Read Recover Time Before Write tOEH tGHWL (OE High to WE Low) CE Setup Time from WE Low tCS tELWL 0 0 0 ns CE Hold Time from WE High tCH tWHEH 0 0 0 ns WE Pulse Width tWP tWLWH 45 50 50 ns WE Pulse Width High tWPH tWHWL 20 20 20 ns Byte Programming Operation tWHWH1 tWHWH1 8 Sector Erase Operation tWHWH2 tWHWH2 8 8 15 µs 15 15 Sec VCC Set-Up Time tVCS 50 50 50 µs Rise Time to VID tVIDR 500 500 500 ns OE Setup Time to WE Active tOESP tRP 4 4 4 µs 500 500 500 ns tBUSY 40 50 60 ns Reset Pulse Width Program/Erase Valid to RY/BY Delay Notes: 1. Not 100% tested. AC Characteristics – Read Only Operations (TC = -55°C to +125°C, VCC = +4.5V to + 5.5V, Unless otherwise specified) Parameter Read Cycle Time Parameter Parameter Symbol Symbol Standard JEDEC tRC tAVAV (1) 90ns Min Max 90 120ns Min Max 120 150ns Min Max 150 Units ns Address to Output Delay tACC tAVQV 90 120 150 ns CE to Output Delay tCE tELQV 90 120 150 ns OE to Output Delay tOE tGLQV 40 50 55 ns CE to Output in High Z (1) tDF tEHQZ 20 30 35 ns (1) tDF tGHQZ 20 35 ns tOH tAXQX OE to Output in High Z Output Hold from Addresses, CE or OE Change, Whichever Occurs First RESET Low to Read Mode (1) tREADY 0 0 30 0 20 0 0 20 ns 20 µs Notes: 1. Not 100% tested. Aeroflex Circuit Technology 4 SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700 AC Characteristics – Write/Erase/Program Operations – CE Controlled (TC = -55°C to +125°C, VCC = +4.5V to + 5.5V, Unless otherwise specified) Parameter Parameter Symbol Symbol Standard JEDEC Write Cycle Time (1) tWC tAVAV 90 120 150 ns Address Setup to CE Going Low tAS tAVEL 0 0 0 ns Address Hold Time from CE Low tAH tELAX 45 50 50 ns Data Setup to CE Going High tDS tDVEH 45 50 50 ns tDH tEHDX 0 0 0 ns 0 0 0 ns 0 0 0 ns 10 10 10 ns Parameter Data Hold Time from CE High Output Enable Setup Time (1) Output Enable Hold Time (1) Read Recover Time Before Write tOES Read Toggle Bit I and Data Polling tOEH 90ns Min Max 120ns Min Max 150ns Min Max Units tGHEL tGHEL 0 0 0 ns CE Setup Time from WE Low tWS tWLEL 0 0 0 ns WE Hold Time from CE High tWH tEHWH 0 0 0 ns WE Pulse Width tCP tELEH 45 50 50 ns (OE High to WE Low) tCPH tELEL 20 20 20 ns Byte Programming Operation tWHWH1 tWHWH1 8 8 8 µs Sector Erase Operation tWHWH2 tWHWH2 WE Pulse Width High 15 15 15 Sec Notes: 1. Not 100% tested. Aeroflex Circuit Technology 5 SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700 AC Test Circuit Test Configuration Component Values VCC Test Configuration CL (pF) R1 (Ω) R2 (Ω) 3.3V Standard Test 50 990 770 5V Standard Test 50 580 390 R1 Device Under Test NOTES: CL includes jig capacitance. OUT CL R2 Parameter Typical Units Input Pulse Level 0 – 3.0 V 5 ns 1.5 V Input Rise and Fall Input and Output Timing Reference Level AC Waveforms for Write and Erase Operations, WE Controlled 3rd Bus Cycle Addresses Data Polling 5555H PA tWC tAS PA tAH tRC CE tGHWL OE tWP WE tCS tWHWH1 tWPH Data AOH tDF tOE tDH PD DQ7 DOUT tDS tOH +5 Volt tCE Aeroflex Circuit Technology 6 SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700 AC Waveforms for Write and Erase Operations, CE Controlled Data Polling Addresses 5555H PA tWC PA tAH tAS WE tGHEL OE tCP CE tWS tWHWH1 tCPH tDH AOH Data PD DQ7 DOUT tDS +5 Volt AC Waveform For Read Operations tRC Addresses Addresses Stable tACC CE tDF tOE OE tOEH WE tCE tOH Outputs Aeroflex Circuit Technology High Z Output Valid 7 High Z SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700 Pin Numbers & Functions 68 Pins — Dual-Cavity CQFP (Standard Configuration) Pin # Function Pin # Function Pin # Function Pin # Function 1 GND 18 GND 35 OE 52 GND 2 CE3 19 I/O8 36 CE2 53 I/O23 3 A5 20 I/O9 37 A17 54 I/O22 4 A4 21 I/O10 38 RY/BY 55 I/O21 5 A3 22 I/O11 39 NC 56 I/O20 6 A2 23 I/O12 40 NC 57 I/O19 7 A1 24 I/O13 41 A18 58 I/O18 8 A0 25 I/O14 42 A19 59 I/O17 9 RESET 26 I/O15 43 A20 60 I/O16 10 I/O0 27 VCC 44 I/O31 61 VCC 11 I/O1 28 A11 45 I/O30 62 A10 12 I/O2 29 A12 46 I/O29 63 A9 13 I/O3 30 A13 47 I/O28 64 A8 14 I/O4 31 A14 48 I/O27 65 A7 15 I/O5 32 A15 49 I/O26 66 A6 16 I/O6 33 A16 50 I/O25 67 WE 17 I/O7 34 CE1 51 I/O24 68 CE4 Consult Factory for Special order (Optional Configuration): Pin 38 - WE2, Pin 39 - WE3, Pin 40 - WE4 and Pin 67 - WE1 "F18" — CQFP Package Pin 9 .990 SQ ±.010 .940 SQ ±.009 Pin 10 .140 MAX Pin 61 Pin 60 .008 ±.002 .010 ±.008 .015 ±.002 .040 .015 ±.002 Detail “A” .900 SQ REF .640 SQ REF Metal spacer Pin 26 Pin 27 Pin 44 .800 REF Pin 43 See Detail “A” All dimensions in inches Aeroflex Circuit Technology 8 SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700 CIRCUIT TECHNOLOGY Ordering Information Model Number Screening Speed Package ACT–F2M32A–090F18C Commercial (0°C to +70°C) 90 ns CQFP ACT–F2M32A–120F18C Commercial (0°C to +70°C) 120 ns CQFP ACT–F2M32A–150F18C Commercial (0°C to +70°C) 150 ns CQFP ACT–F2M32A–090F18I Industrial (-40°C to +85°C) 90 ns CQFP ACT–F2M32A–120F18I Industrial (-40°C to +85°C) 120 ns CQFP ACT–F2M32A–150F18I Industrial (-40°C to +85°C) 150 ns CQFP ACT–F2M32A–090F18M Military (-55°C to +125°C) 90 ns CQFP ACT–F2M32A–120F18M Military (-55°C to +125°C) 120 ns CQFP ACT–F2M32A–150F18M Military (-55°C to +125°C) 150 ns CQFP ACT–F2M32A–090F18Q DESC Drawing Pending MIL-PRF-38534 Compliant 90 ns CQFP ACT–F2M32A–120F18Q DESC Drawing Pending MIL-PRF-38534 Compliant 120 ns CQFP ACT–F2M32A–150F18Q DESC Drawing Pending MIL-PRF-38534 Compliant 150 ns CQFP Part Number Breakdown ACT– F 2M 32 A– 090 F18 M Aeroflex Circuit Technology Screening Memory Type C = Commercial Temp, 0°C to +70°C I = Industrial Temp, -40°C to +85°C T = Military Temp, -55°C to +125°C M = Military Temp, -55°C to +125°C, Screened * Q = MIL-PRF-38534 Compliant/SMD if applicable S = SRAM F = FLASH EEPROM E = EEPROM D = Dynamic RAM Memory Depth, Locations Package Type & Size Surface Mount Packages F18 = .94" SQ 68 Lead\Dual-Cavity CQFP Memory Width, Bits Pinout Options A = One WE, RY/BY access on Pin 38 - Standard pinout C = Four WE’s & RY/BY internally tied - Optional pinout * Screened to the individual test methods of MIL-STD-883 Memory Speed, ns (+5V VCC) Specifications subject to change without notice Aeroflex Circuit Technology 35 South Service Road Plainview New York 11830 www.aeroflex.com/act1.htm Aeroflex Circuit Technology Telephone: (516) 694-6700 FAX: (516) 694-6715 Toll Free Inquiries: (800) 843-1553 E-Mail: [email protected] 9 SCD1666A REV A 9/12/97 Plainview NY (516) 694-6700