DSK BZX55C16 Silicon planar power zener diode Datasheet

Diode Semiconductor Korea
ZENER DIODES
BZX55 --- SERIES
POWER DISSIPATION: 500 mW
FEATURES
DO-34(GLASS)
Silicon planar power zener diodes
The zener voltages are graded according to the
international E 24 standard. Standard zener voltage
tolerance is ±5%. Replace suffix "C" with "B" for ±2%,
Replace suffix "C" with "A" for ±1%.
other voltage tolerance and other zener voltage are
available upon request.
MECHANICAL DATA
Case:DO-35, Glass Case
DO-35(GLASS)
Terminals: Solderable per MIL-STD-202, method 208
Polarity: Cathode band
Marking: Type number
Approx. Weight: 0.13 grams.
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
SYMBOL
VALUE
UNIT
Pow er dissipation @ Tamb=25
Ptot
5001)
mW
Junction temperature
TJ
175
Storage temperature range
Ts
-55---+175
TYP
MAX
UNIT
RθJA
3001)
/W
VF
1.0
Zener current (see Table "Characteristics")
SYMBOL
Thermal resistance junction to ambient
Forw ard voltage at IF=100mA
MIN
NOTES: (1) Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature.
V
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ELECTRICAL CHARACTERISTICS (T A=25℃)
Type
Zener Voltage
Range
Dynamic
Resistance
Test
Current
Temperature
Coefficient
VZ@IZT
rzjT@IZT rzjK@IZK
f=1KHz f=1KHz
IZT
αVZ
V
Ω
mA
%/K
Min.
Max.
BZX55C2V4
2.28
2.56
85
600
BZX55C2V7
2.5
2.9
85
BZX55C3V0
2.8
3.2
BZX55C3V3
3.1
BZX55C3V6
Reverse Leakage
Current
IR@
TA=150℃
IR@
TA=25℃
μA
Test
Current
@VR
IZK
V
mA
Min.
Max.
5.0
-0.090
-0.060
50
100
1.0
1.0
600
5.0
-0.090
-0.060
10
50
1.0
1.0
85
600
5.0
-0.080
-0.050
4.0
40
1.0
1.0
3.5
85
600
5.0
-0.080
-0.050
2.0
40
1.0
1.0
3.4
3.8
85
600
5.0
-0.080
-0.050
2.0
40
1.0
1.0
BZX55C3V9
3.7
4.1
85
600
5.0
-0.080
-0.050
2.0
40
1.0
1.0
BZX55C4V3
4.0
4.6
75
600
5.0
-0.060
-0.030
1.0
20
1.0
1.0
BZX55C4V7
4.4
5.0
60
600
5.0
-0.050
0.020
0.5
10
1.0
1.0
BZX55C5V1
4.8
5.4
35
550
5.0
-0.020
0.020
0.1
2.0
1.0
1.0
BZX55C5V6
5.2
6.0
25
450
5.0
-0.050
0.050
0.1
2.0
1.0
1.0
BZX55C6V2
5.8
6.6
10
200
5.0
0.030
0.060
0.1
2.0
2.0
1.0
BZX55C6V8
6.4
7.2
8.0
150
5.0
0.030
0.070
0.1
2.0
3.0
1.0
BZX55C7V5
7.0
7.9
7.0
50
5.0
0.030
0.070
0.1
2.0
5.0
1.0
BZX55C8V2
7.7
8.7
7.0
50
5.0
0.030
0.080
0.1
2.0
6.2
1.0
BZX55C9V1
8.5
9.6
10
50
5.0
0.030
0.090
0.1
2.0
6.8
1.0
BZX55C10
9.4
10.6
15
70
5.0
0.030
0.1
0.1
2.0
7.5
1.0
BZX55C11
10.4
11.6
20
70
5.0
0.030
0.11
0.1
2.0
8.2
1.0
BZX55C12
11.4
12.7
20
90
5.0
0.030
0.11
0.1
2.0
9.1
1.0
BZX55C13
12.4
14.1
26
110
5.0
0.030
0.11
0.1
2.0
10
1.0
BZX55C15
13.8
15.6
30
110
5.0
0.030
0.11
0.1
2.0
11
1.0
BZX55C16
15.3
17.1
40
170
5.0
0.030
0.11
0.1
2.0
12
1.0
BZX55C18
16.8
19.1
50
170
5.0
0.030
0.11
0.1
2.0
13
1.0
BZX55C20
18.8
21.2
55
220
5.0
0.030
0.11
0.1
2.0
15
1.0
BZX55C22
20.8
23.3
55
220
5.0
0.040
0.12
0.1
2.0
16
1.0
BZX55C24
22.8
25.6
80
220
5.0
0.040
0.12
0.1
2.0
18
1.0
BZX55C27
25.1
28.9
80
220
5.0
0.040
0.12
0.1
2.0
20
1.0
BZX55C30
28
32
80
220
5.0
0.040
0.12
0.1
2.0
22
1.0
BZX55C33
31
35
80
220
5.0
0.040
0.12
0.1
2.0
24
1.0
BZX55C36
34
38
80
220
5.0
0.040
0.12
0.1
2.0
27
1.0
BZX55C39
37
41
90
500
2.5
0.040
0.12
0.1
5.0
30
0.5
BZX55C43
40
46
90
600
2.5
0.040
0.12
0.1
5.0
33
0.5
BZX55C47
44
50
110
700
2.5
0.040
0.12
0.1
5.0
36
0.5
BZX55C51
48
54
125
700
2.5
0.040
0.12
0.1
10
39
0.5
BZX55C56
52
60
135
1000
2.5
0.040
0.12
0.1
10
43
0.5
BZX55C62
58
66
150
1000
2.5
0.040
0.12
0.1
10
47
0.5
BZX55C68
64
72
200
1000
2.5
0.040
0.12
0.1
10
51
0.5
BZX55C75
70
79
250
1500
2.5
0.040
0.12
0.1
10
56
0.5
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Diode Semiconductor Korea
BZX55---SERIES
FIG.1 -- BREAKDAWN CHARACTERISTICS
mA
BZX55...
50
C2V7
C3V9
C5V6
C8V2
40
IZ
C4V7
C3V3
C0V8
C6V8
30
TJ=25 C
0
20
Test current Iz
5mA
10
0
0
1
2
3
4
5
6
7
8
9
10 V
VZ
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Diode Semiconductor Korea
BZX55---SERIES
FIG.2 -- BREAKDOWN CHARACTERISTICS
mA
30
BZX55...
TJ=25 0 C
C10
IZ
C12
C15
20
C18
C22
0
C27
Test current Iz
5mA
10
C33
0
10
20
30
40 V
vZ
FIG.3 -- ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE
mW
500
400
P tot
300
200
100
0
0
100
200℃
Tamb
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