ASI ASI10559 Npn silicon rf power transistor Datasheet

AVD035P
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .280 4L PILL (A)
A
DESCRIPTION:
.100x45°
The ASI AVD035P is Designed for
C
B
FEATURES:
•
•
• Omnigold™ Metalization System
ØG
D
E
F
MAXIMUM RATINGS
2.5 A PEAK
IC
55 V
VCB
PDISS
100 W
PEAK
O
O
-65 C to +200 C
TJ
DIM
MINIMUM
inches / mm
inches / mm
A
.095 / 2.41
.105 / 2.67
B
.195 / 4.95
.205 / 5.21
C
1.000 / 25.40
D
.004 / 0.10
.007 / 0.18
E
.050 / 1.27
.065 / 1.65
.145 / 3.68
F
.275 / 6.99
G
TSTG
-65 OC to +150 OC
θ JC
1.0 OC/W
CHARACTERISTICS
SYMBOL
ORDER CODE: ASI10559
O
NONETEST CONDITIONS
IC = 10 mA
BVCER
IC = 10 mA
BVEBO
IE = 1 mA
ICES
VCE = 50 V
hFE
VCE = 5.0 V
ηC
.285 / 7.21
TC = 25 C
BVCBO
PG
MAXIMUM
VCC = 50 V
RBE = 10 Ω
IC = 500 mA
POUT = 35 W
f = 1025 - 1150 MHz
MINIMUM TYPICAL MAXIMUM
UNITS
65
V
65
V
3.5
V
15
5.0
mA
120
---
10
dB
35
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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