DGNJDZ BAS21 Fast switching speed Datasheet

DONGGUAN NANJING ELECTRONICS LTD.,
SOT-23 Plastic-Encapsulate Diodes
BAS21/A/C/S
SOT-23
SWITCHING DIODE
FEATURES
z
Fast Switching Speed
z
Surface Mount Package Ideally Suited for Automatic Insertion
z
For General Purpose Switching Applications
z
High Conductance
BAS21
BAS21A
Marking: JS
Marking:JS2
BAS21C
BAS21S
Marking:JS3
Marking: JS4
Maximum Ratings @Ta=25℃
Parameter
Symbol
Repetitive peak reverse voltage
VRRM
Working peak reverse voltage
VRWM
Limit
Unit
250
V
DC blocking voltage
VR
Forward continuous current
IFM
400
mA
Average rectified output current
IO
200
mA
Non-repetitive peak forward surge current
@ t = 1.0µs
IFSM
@ t = 1.0s
Repetitive peak forward surge current
2.5
A
0.5
IFRM
625
mA
Power dissipation
PD
225
mW
Thermal resistance junction to ambient
RθJA
55
℃/W
Junction temperature
TJ
Storage temperature range
TSTG
℃
150
℃
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Symbol
V(BR)
Test
conditions
IR= 100µA
Min
Max
250
Unit
V
IR
VR=200V
0.1
µA
Forward voltage
VF
IF=100mA
IF=200mA
1000
1250
mV
Diode capacitance
CD
VR=0V, f=1MHz
5
pF
Reveres recovery time
trr
IF=IR=30mA,Irr=0.1×IR,RL=100Ω
50
ns
B,Apr,2012
BAS21/A/C/S
Typical Characteristics
C
REVERSE CURRENT IR
C
o
T=
a 2
5
FORWARD CURRENT
10
1
0.1
0.01
0.0
0.4
0.8
1.2
FORWARD VOLTAGE
1.6
VF
Characteristics
o
Ta=100 C
100
10
o
Ta=25 C
1
2.0
0
40
(V)
80
120
REVERSE VOLTAGE
160
VR
200
(V)
Power Derating Curve
Capacitance Characteristics
1.6
Reverse
1000
o
T=
a 1
00
IF
(mA)
100
Characteristics
(nA)
Forward
1000
300
1.2
1.0
0.8
0.6
(mW)
250
PD
f=1MHz
1.4
200
POWER DISSIPATION
CAPACITANCE BETWEEN TERMINALS
CT (pF)
Ta=25℃
0
4
8
12
REVERSE VOLTAGE
16
VR
(V)
20
150
100
50
0
0
25
50
75
100
AMBIENT TEMPERATURE
125
Ta
150
(℃)
B,Apr,2012
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