DONGGUAN NANJING ELECTRONICS LTD., SOT-23 Plastic-Encapsulate Diodes BAS21/A/C/S SOT-23 SWITCHING DIODE FEATURES z Fast Switching Speed z Surface Mount Package Ideally Suited for Automatic Insertion z For General Purpose Switching Applications z High Conductance BAS21 BAS21A Marking: JS Marking:JS2 BAS21C BAS21S Marking:JS3 Marking: JS4 Maximum Ratings @Ta=25℃ Parameter Symbol Repetitive peak reverse voltage VRRM Working peak reverse voltage VRWM Limit Unit 250 V DC blocking voltage VR Forward continuous current IFM 400 mA Average rectified output current IO 200 mA Non-repetitive peak forward surge current @ t = 1.0µs IFSM @ t = 1.0s Repetitive peak forward surge current 2.5 A 0.5 IFRM 625 mA Power dissipation PD 225 mW Thermal resistance junction to ambient RθJA 55 ℃/W Junction temperature TJ Storage temperature range TSTG ℃ 150 ℃ -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage leakage current Symbol V(BR) Test conditions IR= 100µA Min Max 250 Unit V IR VR=200V 0.1 µA Forward voltage VF IF=100mA IF=200mA 1000 1250 mV Diode capacitance CD VR=0V, f=1MHz 5 pF Reveres recovery time trr IF=IR=30mA,Irr=0.1×IR,RL=100Ω 50 ns B,Apr,2012 BAS21/A/C/S Typical Characteristics C REVERSE CURRENT IR C o T= a 2 5 FORWARD CURRENT 10 1 0.1 0.01 0.0 0.4 0.8 1.2 FORWARD VOLTAGE 1.6 VF Characteristics o Ta=100 C 100 10 o Ta=25 C 1 2.0 0 40 (V) 80 120 REVERSE VOLTAGE 160 VR 200 (V) Power Derating Curve Capacitance Characteristics 1.6 Reverse 1000 o T= a 1 00 IF (mA) 100 Characteristics (nA) Forward 1000 300 1.2 1.0 0.8 0.6 (mW) 250 PD f=1MHz 1.4 200 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) Ta=25℃ 0 4 8 12 REVERSE VOLTAGE 16 VR (V) 20 150 100 50 0 0 25 50 75 100 AMBIENT TEMPERATURE 125 Ta 150 (℃) B,Apr,2012