DTB3055 www.din-tek.jp N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® Power MOSFET • AEC-Q101 Qualifiedc 30 RDS(on) () at VGS = 10 V 0.025 RDS(on) () at VGS = 4.5 V 0.038 ID (A) • 100 % Rg and UIS Tested 7 Configuration Single D SOT-223 G D G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL VDS LIMIT Drain-Source Voltage Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C ID TC = 125 °C Continuous Source Current (Diode Conduction) Pulsed Drain Currenta Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa L = 0.1 mH TC = 25 °C Operating Junction and Storage Temperature Range UNIT V 7 4.5 IS 5 IDM 31 IAS 10 EAS 5 PD TC = 125 °C 30 4 1.3 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT RthJA 110 RthJF 38 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient PCB Mountb Junction-to-Foot (Drain) Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. When mounted on 1" square PCB (FR-4 material). c. Parametric verification ongoing. 1 °C/W DTB3055 www.din-tek.jp SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage VDS VGS = 0 V, ID = 250 μA 30 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 IGSS Gate-Source Leakage VDS = 0 V, VGS = ± 20 V VGS = 0 V IDSS Zero Gate Voltage Drain Current On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductanceb RDS(on) - - ± 100 VDS = 30 V - - 1 VGS = 0 V VDS = 30 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 30 V, TJ = 175 °C - - 150 VGS = 10 V VDS5 V 10 - - VGS = 10 V ID = 6 A - 0.018 0.025 VGS = 4.5 V ID = 4.9 A - 0.032 0.038 VGS = 10 V ID = 6 A, TJ = 125 °C - - 0.054 VGS = 10 V ID = 6 A, TJ = 175 °C - - 0.064 - 21 - - 295 370 VDS = 15 V, ID = 5 A gfs V nA μA A S Dynamicb Input Capacitance Ciss Output Capacitance Coss - 67 85 Reverse Transfer Capacitance Crss - 25 35 Total Gate Chargec Qg - 6 10 Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Rg Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and VDS = 15 V, f = 1 MHz VGS = 0 V VGS = 10 V VDS = 15 V, ID = 6 A - 1.2 - - 1 - f = 1 MHz 3.0 6.65 11 - 6 9 VDD = 15 V, RL = 2.5 ID 6 A, VGEN = 10 V, Rg = 1 - 12 18 - 13 20 - 8 12 td(on) tr td(off) tf pF nC ns Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = 3 A, VGS = 0 V - - 31 A - 0.8 1.1 V Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 DTB3055 www.din-tek.jp TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 40 40 VGS = 10 V thru 5 V 32 ID - Drain Current (A) ID - Drain Current (A) 32 24 VGS = 4 V 16 24 16 TC = 25 °C 8 8 TC = 125 °C VGS = 3 V 0 0 0 2 4 6 8 0 10 2 4 6 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 30 10 0.15 TC = - 55 °C 24 0.12 TC = 25 °C RDS(on) - On-Resistance (Ω) gfs - Transconductance (S) TC = - 55 °C 18 TC = 125 °C 12 0.09 VGS = 4.5 V 0.06 0.03 6 VGS = 10 V 0.00 0 0.0 1.2 2.4 3.6 ID - Drain Current (A) 4.8 0 6.0 8 16 24 32 40 ID - Drain Current (A) On-Resistance vs. Drain Current Transconductance 500 10 400 8 VGS - Gate-to-Source Voltage (V) C - Capacitance (pF) ID = 6 A Ciss 300 200 100 Coss 6 VDS = 15 V 4 2 Crss 0 0 0 6 12 18 24 30 0 2 4 6 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge 3 8 10 DTB3055 www.din-tek.jp TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 2.0 1.7 TJ = 150 °C IS - Source Current (A) 1.4 VGS = 4.5 V 1.1 1 0.1 TJ = 25 °C 0.01 0.8 0.5 - 50 - 25 0.001 0 25 50 75 100 125 150 0.0 175 0.2 0.4 0.6 0.8 1.0 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 0.25 0.5 0.20 0.2 VGS(th) Variance (V) RDS(on) - On-Resistance (Ω) 10 VGS = 10 V 0.15 0.10 1.2 - 0.1 ID = 5 mA - 0.4 ID = 250 μA TJ = 150 °C 0.05 - 0.7 TJ = 25 °C - 1.0 - 50 - 25 0.00 0 2 4 6 8 10 0 25 50 75 100 VGS - Gate-to-Source Voltage (V) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 40 ID = 1 mA VDS - Drain-to-Source Voltage (V) RDS(on) - On-Resistance (Normalized) ID = 6 A 38 36 34 32 30 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature 4 125 150 175 DTB3055 www.din-tek.jp THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 100 IDM Limited ID - Drain Current (A) 10 100 μs 1 1 ms Limited by RDS(on)* 10 ms 0.1 100 ms 1s, 10s, DC TC = 25 °C Single Pulse BVDSS Limited 0.01 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 Safe Operating Area Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 Single Pulse t1 t2 2. Per Unit Base = R thJA = 110 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 5 100 1000 DTB3055 www.din-tek.jp THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. 6 Package Information www.din-tek.jp SOT-223 (HIGH VOLTAGE) B D A 3 0.08 (0.003) B1 C 0.10 (0.004) M C B M A 4 3 H E 0.20 (0.008) M C A M L1 1 2 3 4xL 3xB e θ 0.10 (0.004) M C B M e1 4xC INCHES MILLIMETERS DIM. MIN. MAX. MIN. MAX. A 1.55 1.80 0.061 0.071 B 0.65 0.85 0.026 0.033 B1 2.95 3.15 0.116 0.124 C 0.25 0.35 0.010 0.014 D 6.30 6.70 0.248 0.264 E 3.30 3.70 0.130 e 2.30 BSC e1 4.60 BSC 0.181 BSC H 6.71 7.29 0.264 L 0.91 - 0.036 L1 θ 0.061 BSC - 0.146 0.0905 BSC 0.287 0.0024 BSC 10' ECN: S-82109-Rev. A, 15-Sep-08 DWG: 5969 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension do not include mold flash. 4. 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