ADPOW APTGF300SK120 Buck chopper npt igbt power module Datasheet

APTGF300SK120
Buck chopper
NPT IGBT Power Module
VCES = 1200V
IC = 300A @ Tc = 80°C
Application
• AC and DC motor control
• Switched Mode Power Supplies
Features
• Non Punch Through (NPT) FAST IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
VBUS
0/VBUS
OUT
E1
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
Tc = 25°C
Max ratings
1200
400
300
800
±20
2080
Tj = 150°C
600A @ 1200V
Tc = 25°C
Tc = 80°C
Tc = 25°C
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-5
APTGF300SK120 – Rev 1 March, 2004
G1
Benefits
• Outstanding performance at high frequency
operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
APTGF300SK120
All ratings @ Tj = 25°C unless otherwise specified
Symbol Characteristic
BVCES Collector - Emitter Breakdown Voltage
ICES
Zero Gate Voltage Collector Current
VCE(on)
Collector Emitter on Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Tf
Eon
Eoff
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Reverse diode ratings and characteristics
Symbol Characteristic
IF(AV)
VF
Maximum Average Forward Current
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
VGE = 0V, IC = 4mA
Tj = 25°C
VGE = 0V
VCE = 1200V
Tj = 125°C
T
j = 25°C
VGE =15V
IC = 300A
Tj = 125°C
VGE = VCE, IC = 12mA
VGE = ±20V, VCE = 0V
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Min
Inductive Switching (125°C)
VGE = 15V
VBus = 600V
IC = 300A
RG = 2Ω
50% duty cycle
IF = 400A
IF = 800A
IF = 400A
IF = 400A
VR = 800V
di/dt =800A/µs
IF = 400A
VR = 800V
di/dt =800A/µs
Min
Tc = 70°C
Max
0.4
25
3.3
4
6
4.5
Min
Test Conditions
Typ
1200
mA
V
6.5
±1
V
µA
Typ
21
2.9
1.52
70
50
500
30
17
18
Max
Unit
Typ
Max
Tj = 125°C
400
2.0
2.3
1.8
Tj = 25°C
420
Tj = 125°C
580
Tj = 25°C
5
Tj = 125°C
21.4
APT website – http://www.advancedpower.com
3.9
Unit
V
nF
ns
mJ
Unit
A
2.5
V
ns
µC
2-5
APTGF300SK120 – Rev 1 March, 2004
Electrical Characteristics
APTGF300SK120
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
To heatsink
Mounting torque
For terminals
Package Weight
Min
IGBT
Diode
Typ
Max
0.06
0.16
2500
M6
M5
-40
-40
-40
3
2
Unit
°C/W
V
150
125
100
5
3.5
280
°C
N.m
g
APT website – http://www.advancedpower.com
3-5
APTGF300SK120 – Rev 1 March, 2004
Package outline
APTGF300SK120
Typical Performance Curve
Output characteristics (VGE=15V)
Output characteristics (VGE=10V)
350
250µs Pulse Test
< 0.5% Duty cycle
400
350
TJ=25°C
Ic, Collector current (A)
Ic, Collector current (A)
450
300
250
200
150
100
TJ=125°C
50
200
150
100
TJ=125°C
50
0
0
1
2
3
VCE, Collector to Emitter Voltage (V)
4
0
1
2
3
VCE, Collector to Emitter Voltage (V)
Transfer Characteristics
250µs Pulse Test
< 0.5% Duty cycle
500
400
300
200
100
0
4
6
8
10
VGE, Gate to Emitter Voltage (V)
IC = 300A
TJ = 25°C
16
VCE=600V
12
VCE=800V
8
4
0
12
Switching times vs collector current
4
Gate Charge
20
VGE, Gate to Emitter Voltage (V)
600
Ic, Collector Current (A)
TJ=25°C
250
0
1000
250µs Pulse Test
< 0.5% Duty cycle
300
0
100
500
1000
1500
2000
Gate Charge (nC)
2500
Capacitance vs Collector to Emitter Voltage
100
C, Capacitance (nF)
time (ns)
tdoff
VCE = 600V
VGE=±15V
RG=2
TJ = 125°C
tdon
tf
tr
Cies
10
Coes
Cres
1
10
100
200
300
Ic, Collector current (A)
400
0
80
Eon
60
Eoff
40
20
0
0
2
4
6
8 10 12
Gate resistance (Ohms)
14
16
30
400
Ic, DC Collector Current (A)
Switching Energy losses (mJ)
VCE = 600V
VGE=±15V
IC=300A
TJ = 125°C
20
DC Collector Current vs Case Temperature
Switching energy losses vs Gate resistance
120
100
10
VCE, Collector to Emitter Voltage (V)
350
300
250
200
150
100
50
0
0
25
50
75
100 125
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
150
4-5
APTGF300SK120 – Rev 1 March, 2004
0
APTGF300SK120
Minimum Switching Safe Operating
VCE = 600V, VGE=±15V
IC=300A, TJ = 125°C
600
500
tdoff
1000
time (ns)
IC, Collector current (A)
Switching times vs gate resistor
10000
Area
700
400
300
200
tdon
tr
100
tf
100
0
10
0
300
600
900
1200
1500
VCE, Collector to Emitter Voltage (V)
0
5
10
15
Gate resistance (Ohms)
20
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.07
0.06
0.05
0.04
0.03
0.02
0.9
0.7
0.5
0.3
0.1
0.05
0
0.00001
0.01
Single Pulse
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration (Seconds)
1
10
VCE = 800V
D = 50%
RG = 2
TJ = 125°C
80
60
40
20
0
50
100 150 200 250 300 350
IC, Collector Current (A)
400
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
5-5
APTGF300SK120 – Rev 1 March, 2004
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
100
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