BAV17-BAV21 250mA Axial Leaded Smalll Sighal Switching Diode Features · Silicon epitaxial planar diode B A · High speed switching diode A · 500 m W power dissipation C D Mechanical Data DO-35 · Case: DO-35,glass case Dim Min A 25.40 ¾ B ¾ 4.00 C ¾ 0.60 D ¾ 2.00 · Polarity: Color band denotes cathode · Weight: 0.004 ounces, 0.13 gram s Max All Dimensions in mm Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Reverse voltage Peak reverse voltage Average forw ard rectified current Half w ave rectification w ith resist.load @TA =25 and f 50Hz Forw ard surge current @ t<1s and TJ =25 Pow er dissipation @ TA =25 Thermal resistance junction to ambient Junction temperature Storage temperature range Forw ard voltage @ IF=100mA Leakage current at reverse voltage VR V RM f=1MHZ BAV19 100 120 BAV20 150 200 BAV21 200 250 UNITS V V 250 1) mA IFSM P tot RθJA TJ TSTG 1.0 A mW K/W 1) MIN - 500 350 175 -55 --- +175 TYP - MAX 1.0 UNITS V - - 100 nA - - 15 µA CJ - 1.5 - t rr - - 50 IR @Tj=100 Capacitance @ V F=V R=0V Reverse recovery time from IF=30mA to IR=30mA from IRR=3mA, RL=100Ω. BAV18 50 60 I(AV) VF @Tj=25 BAV17 20 25 1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature. 1 of 2 pF ns FIG.2 -- ADMISSIBLE FORWARD CURRENT VERSUS AMBIENT TEMPERATURE FIG.1 -- FORWARD CHARACTERISTICS A .3 mA 1000 100 I O, I F TJ=100 .2 DC CURRENT I F 10 TJ=25 IF 1 .1 CURRENT (RECTIF.) I F(AV) .1 1 .01 0 .2 .4 .6 .8 30 0 60 90 1.0V 120 150℃ TA VF FIG.3 -- ADMISSIBLE POWER DISSLPATION VERSUS AMBIENT TEMPERATURE FIG.4 -- LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE 1000 mW 500 I R (T J ) I R (25 400 ) 100 P tot 300 10 200 1 100 V R =50V 1 0 100 200℃ 0.1 TA 100 0 200℃ TJ FIG.5 -- DYNAMIC FORWARD RESISTANCE VERSUS FORWARD CURRENT FIG.6 -- CAPACITANCE VERSUS REVERSE VOLTAGE 100 2 T J =25 1.8 r 50 1.6 F 1.4 20 CJ 1.2 1 10 .8 5 .6 .4 2 .2 0 1 1 2 5 10 20 50 IF 100 mA .1 .2 .5 1 2 5 10 20 50 100V VR 2 of 2 2of2