AP9970GK RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower Gate Charge ▼ Fast Switching Characteristic 60V RDS(ON) 50mΩ ID S ▼ RoHS Compliant BVDSS 5.8A D SOT-223 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and costeffectiveness. G S Absolute Maximum Ratings Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units 60 V +20 V Continuous Drain Current 3 5.8 A Continuous Drain Current 3 4.6 A 30 A 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation 2.8 W Linear Derating Factor 0.02 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter 3 Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Unit 45 ℃/W 1 201204252 AP9970GK o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions VGS=0V, ID=250uA Min. Typ. Max. Units 60 - - V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.05 - V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=5A - - 50 mΩ VGS=4.5V, ID=3A - - 60 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=5A - 5 - S IDSS Drain-Source Leakage Current VDS=60V, VGS=0V - - 1 uA Drain-Source Leakage Current (T j=70 C) VDS=48V ,VGS=0V - - 25 uA Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA ID=5A - 11.5 15 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=48V - 2.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 6 - nC 2 td(on) Turn-on Delay Time VDS=30V - 6 - ns tr Rise Time ID=1A - 5 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 22.5 - ns tf Fall Time RD=30Ω - 6 - ns Ciss Input Capacitance VGS=0V - 910 1450 pF Coss Output Capacitance VDS=25V - 95 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 70 - pF Rg Gate Resistance f=1.0MHz - 1.2 1.8 Ω Min. Typ. IS=2.1A, VGS=0V - - 1.3 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=5A, VGS=0V, - 25 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 31 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 2 3.Surface mounted on 1 in copper pad of FR4 board, t <10sec ; 120 ℃/W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9970GK 30 30 20 10 V G =3.0V ID , Drain Current (A) T A =25 C ID , Drain Current (A) T A =150 o C 10V 7.0V 5.0V 4.5V o 20 V G =3.0V 10 0 0 0 1 2 3 4 0 5 2 4 6 8 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 1.8 ID=3A ID=5A V G =10V Normalized RDS(ON) T A =25 o C RDS(ON) (mΩ) 10V 7.0V 5.0V 4.5V 80 60 1.4 1.0 20 0.6 40 2 4 6 8 25 10 V GS , Gate-to-Source Voltage (V) 50 75 Fig 3. On-Resistance v.s. Gate Voltage 125 150 Fig 4. Normalized On-Resistance v.s. Junction Temperature 60.0 10 8 V GS =4.5V 6 o RDS(ON) (mΩ) IS (A) 100 T j , Junction Temperature ( o C) o T j =150 C T j =25 C 4 50.0 V GS =10V 40.0 2 0 0 0.4 0.8 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 30.0 0 10 20 30 I D , Drain Current (A) Fig 6. On-Resistance vs. Drain Current 3 AP9970GK f=1.0MHz 10000 10 I D =5A V DS =32V V DS =40V V DS =48V 8 C iss 1000 C (pF) VGS , Gate to Source Voltage (V) 12 6 C oss C rss 100 4 2 10 0 0 5 10 15 20 25 1 30 5 Fig 7. Gate Charge Characteristics 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 10 100us 1ms 1 10ms 0.1 100ms 1s T A =25 o C Single Pulse Normalized Thermal Response (Rthja) 100 ID (A) 9 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM t 0.01 T Single Pulse Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja = 120℃/W DC 0.001 0.01 0.1 1 10 100 0.0001 0.001 0.01 V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 VG ID , Drain Current (A) V DS =5V T j =25 o C 20 QG T j =150 o C 4.5V QGS QGD 10 Charge Q 0 0 2 4 6 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4