Diodes DMN2005DLP4K-7 Dual n-channel enhancement mode field effect transistor Datasheet

DMN2005DLP4K
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
Mechanical Data
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Low On-Resistance
Very Low Gate Threshold Voltage, 0.9V Max.
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 4)
ESD Protected Gate
Ultra Low Profile Package
Case: DFN1310H4-6
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish ⎯ NiPdAu annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
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D1
DFN1310H4-6
S2
S1
G1
D2
TOP VIEW
Internal Schematic
ESD protected
Maximum Ratings
G2
@TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
VDSS
20
V
VGSS
±10
200
250
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current per element (Note 1)
Thermal Characteristics
Continuous
Pulsed (Note 3)
ID
@TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
PD
350
mW
RθJA
357
°C/W
TJ, TSTG
-65 to +150
°C
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics
mA
@TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
BVDSS
20
⎯
⎯
V
VGS = 0V, ID = 100μA
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
10
μA
VDS = 17V, VGS = 0V
Gate-Source Leakage
IGSS
⎯
⎯
±5
μA
VGS = ±8V, VDS = 0V
VGS(th)
0.53
⎯
0.9
V
VDS = VGS, ID = 100μA
RDS (ON)
⎯
⎯
⎯
⎯
⎯
0.9
0.85
1.2
2.4
2.5
1.5
1.7
1.7
3.5
3.5
Ω
VGS = 4V, ID = 10mA
VGS = 2.7V, ID = 200mA
VGS = 2.5V, ID = 10mA
VGS = 1.8V, ID = 200mA
VGS = 1.5V, ID = 1mA
⏐Yfs⏐
40
⎯
⎯
mS
OFF CHARACTERISTICS (per element) (Note 5)
ON CHARACTERISTICS (per element) (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Notes:
1.
2.
3.
4.
5.
VDS = 3V, ID = 10mA
Device mounted on FR-4 PCB.
No purposefully added lead.
Pulse width ≤10μS, Duty Cycle ≤1%.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Short duration pulse test used to minimize self-heating effect.
DMN2005DLP4K
Document number: DS30801 Rev. 8 - 2
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October 2009
© Diodes Incorporated
DMN2005DLP4K
2
1.8
ID, DRAIN CURRENT (A)
1.6
VGS = 2.0V
TA = 25oC
VGS =1.8V
1.4
1.2
1
VGS = 1.6V
0.8
VGS = 1.4V
0.6
0.4
VGS = 1.2V
0.2
0
0
VGS = 1.0V
2
1
3
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
4
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Reverse Drain Current vs. Source-Drain Voltage
1
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE (Ω)
0.6
0.8
0.6
0.4
0.2
0
-50
50
75 100 125 150
0
-25
25
TA, AMBIENT TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage vs. Ambient Temperature
0.4
0.2
0
0.001
0.1
1
0.01
ID, DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-State Resistance vs. Drain Current
5
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE (Ω)
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE (Ω)
0.8
0.6
0.4
0.2
0.1
0.001
Document number: DS30801 Rev. 8 - 2
3
2
1
0
0.01
0.1
1
ID, DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
DMN2005DLP4K
4
0
2
3
4
5
6
1
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 6 Static Drain-Source, On-Resistance vs. Gate-Source Voltage
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© Diodes Incorporated
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE (Ω)
DMN2005DLP4K
VSD, DRAIN-SOURCE VOLTAGE (V)
Fig. 8 Reverse Drain Current vs. Source-Drain Voltage
CT, CAPACITANCE (pF)
|YfS|, FORWARD TRANSFER ADMITTANCE (S)
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Static Drain-Source, On-Resistance vs. Ambient Temperature
ID, DRAIN CURRENT (A)
Fig. 9 Forward Transfer Admittance vs. Drain Current
Ordering Information
(Note 6)
Part Number
DMN2005DLP4K-7
Notes:
Case
DFN1310H4-6
Packaging
3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
DL
DMN2005DLP4K
Document number: DS30801 Rev. 8 - 2
DL = Product Type Marking Code
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© Diodes Incorporated
DMN2005DLP4K
Package Outline Dimensions
A
DFN1310H4-6
Dim Min Max Typ
A
0.40
⎯
⎯
A1
0
0.05 0.02
A3
0.13
⎯
⎯
b
0.10 0.20 0.15
D
1.25 1.38 1.30
d
0.25
⎯
⎯
D2
0.30 0.50 0.40
E
0.95 1.075 1.00
e
0.35
⎯
⎯
E2
0.30 0.50 0.40
f
0.10
⎯
⎯
L
0.20 0.30 0.25
Z
0.05
⎯
⎯
All Dimensions in mm
A1
A3
Z
B
D2
R0.
15 0
E2
E
d
L
e
d
f
z
D
Suggested Pad Layout
G2
X2
Y2
G1
b
Y1
G3
DMN2005DLP4K
Document number: DS30801 Rev. 8 - 2
a
X1
Dimensions
G1
G2
G3
X1
X2
Y1
Y2
a
b
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Value (in mm)
0.16
0.17
0.15
0.52
0.20
0.52
0.375
0.09
0.06
October 2009
© Diodes Incorporated
DMN2005DLP4K
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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Copyright © 2009, Diodes Incorporated
www.diodes.com
DMN2005DLP4K
Document number: DS30801 Rev. 8 - 2
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October 2009
© Diodes Incorporated
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