isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT29/A/B/C DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 0.4A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40V(Min)- BDT29; 60V(Min)- BDT29A 80V(Min)- BDT29B; 100V(Min)- BDT29C ·Complement to Type BDT30/A/B/C APPLICATIONS ·Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER VALUE BDT29 80 BDT29A 100 BDT29B 120 BDT29C 140 BDT29 40 BDT29A 60 BDT29B 80 BDT29C 100 Collector-Base Voltage UNIT V Collector-Emitter Voltage V Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak 3 A IB Base Current 0.4 A PC Collector Power Dissipation TC=25℃ 30 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Ttemperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient isc Website：www.iscsemi.cn MAX UNIT 4.17 ℃/W 70 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT29/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT29 VCEO(SUS) Collector-Emitter Sustaining Voltage MIN TYP. MAX UNIT 40 BDT29A 60 IC= 30mA; IB= 0 V BDT29B 80 BDT29C 100 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.125A 0.7 V VBE(on) Base-Emitter On Voltage IC= 1A ; VCE= 4V 1.3 V ICES Collector Cutoff Current VCE= VCEOmax; VBE= 0 0.2 mA ICEO Collector Cutoff Current 0.1 mA 0.2 mA B BDT29/A VCE= 30V; IB= 0 BDT29B/C VCE= 60V; IB= 0 B B IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.2A ; VCE= 4V 40 hFE-2 DC Current Gain IC= 1A ; VCE= 4V 15 Current-Gain—Bandwidth Product IC= 0.2A ; VCE= 10V 3 fT 75 MHz Switching Times ton Turn-On Time 0.3 μs 1.0 μs IC= 1.0A; IB1= -IB2= 0.1A toff Turn-Off Time isc Website：www.iscsemi.cn