TR5050M™ LEDs CxxxTR5050M-Sxx000 Data Sheet Cree’s TR5050M LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the TV-backlighting and general-illumination markets. The TR5050M LEDs are among the brightest in the top-view market while delivering a low forward voltage, resulting in a very bright and highly efficient solution. The metal backside allows for eutectic die attach and enables superior performance from improved thermal management. The design is optimally suited for industry-standard top-view packages. FEATURES APPLICATIONS • • Rectangular LED RF Performance – • 450 nm – 180 mW min Large LCD Backlighting – Television High-Reliability – Eutectic, Solder Paste or Preforms • General Illumination Attach • Medium LCD Backlighting • Low Forward Voltage – 3.3 V Typical at 120 mA – Portable PCs • Maximum DC Forward Current - 200 mA – Monitors • Class 2 ESD Rating • LED Video Displays • InGaN Junction on Thermally Conductive SiC • White LEDs Substrate CxxxTR5050M-Sxx000 Chip Diagram .CPR3EX Rev Data Sheet: Top View Die Cross Section Cathode (-) 98-μm diameter Anode (+) 90-μm diameter Bottom View TR5050M LED 500 x 500 μm Bottom Surface 320 x 320 μm Metal backside 288 x 288 μm t = 175 μm Subject to change without notice. www.cree.com 1 Maximum Ratings at TA = 25°C Notes 1&3 DC Forward Current CxxxTR5050M-Sxx000 200 mA Note 4 Peak Forward Current (1/10 duty cycle @ 1 kHz) 250 mA LED Junction Temperature 150°C Reverse Voltage 5V Operating Temperature Range -40°C to +100°C Storage Temperature Range -40°C to +100°C Electrostatic Discharge Threshold (HBM) 1000 V Note 2 Electrostatic Discharge Classification (MIL-STD-883E) Class 2 Note 2 Typical Electrical/Optical Characteristics at TA = 25°C, If = 120 mA Part Number Note 3 Forward Voltage (Vf, V) C450TR5050M-Sxx000 Reverse Current [I(Vr=5V), μA] Full Width Half Max (λD, nm) Min. Typ. Max. Max. Typ. 2.7 3.3 3.5 2 20 Mechanical Specifications CxxxTR5050M-Sxx000 Dimension Tolerance P-N Junction Area (μm) Description 426 x 443 ±35 Chip Area (μm) 500 x 500 ±35 175 ±15 Au Bond Pad Diameter Anode (μm) Chip Thickness (μm) 90 ±10 Au Bond Pad Thicknesses (μm) 1.0 ±0.5 Au Bond Pad Diamater Cathode (μm) 98 ±10 288 x 288 ±25 Bottom Contact Metal (um) Max If (mA) Max Vf @Max If (V) Bottom Contact Metal Thickness (μm) Max Tj (Deg C) Max Power (W) 200 3.5 150 0.7 Bottom Area (μm) Notes: 1. 2. 3. 4. 320 x 320 ±45 3.0 ±1.0 Maximum ratings are package-dependent. The (C/W) above ratings 10 were determined 20 using lamps in chip-on-MCPCB (metal core PCB) packages for Thermal Resistance 30 characterization. Ratings for other packages may differ. Junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (<Rth 5 seconds). (j-A) = If @ Tamb Tamb Tamb Product resistance to electrostatic discharge 200 (ESD) according to the 25 HBM is measured 25 by simulating ESD 25 using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the maximum 200 143ESD ratings shown. 136 129 All products conform to the listed minimum for electrical when assembled and operated at 120 0 and maximum specifications 150 150and optical characteristics 150 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy encapsulant and clear epoxy die attach). Optical characteristics measured in an integrating sphere using Illuminance E. The maximum forward current is determined by the thermal resistance between the LED junction and ambient. It is crucial for the end-product to be designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to optimize product performance. Maximum Forward Current (mA) 250 200 150 Rth j-a = 10 Rth j-a = 20 Rth j-a = 30 Rth j-a = 40 100 C/W C/W C/W C/W 50 0 50 75 100 125 150 175 Ambient Temperature (C) Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TM and TR5050M are trademarks of Cree, Inc. 2 CPR3EX Rev. - Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Standard Bins for CxxxTR5050M-Sxx000 Radiant Flux (mW) LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxTR5050M-Sxxxx) orders may be filled with any or all bins (CxxxTR5050M-xxxx) contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 120 mA. 450TR5050M-S18000 C450TR5050M-0213 C450TR5050M-0214 C450TR5050M-0215 C450TR5050M-0216 C450TR5050M-0209 C450TR5050M-0210 C450TR5050M-0211 C450TR5050M-0212 C450TR5050M-0205 C450TR5050M-0206 C450TR5050M-0207 C450TR5050M-0208 220.0 200.0 180.0 445 447.5 450 452.5 455 Dominant Wavelength (nm) Note: The radiant-flux values above are representative of the die in a Cree 5-mm lamp. Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TM and TR5050M are trademarks of Cree, Inc. 3 CPR3EX Rev. - Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Relative Light 100% 50% 0% Characteristic Curves 0 50 100 150 200 If (mA) These are representative measurements for the TR5050M LED product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Forward Current vs. Forward Voltage 250 Forward Current vs. Forward Voltage 250 If (mA)Shift (nm) Dominant Wavelength 200 If (mA) Wavelength Shift vs. Forward Current 3 150 100 50 0 0 1 2 3 4 200 2 150 1 100 0 -1 50 -2 0 -3 5 0 1 0 2 3 4 Vf100 (V) 50 Vf (V) 150 5 200 If (mA) Dominant Wavelength Shift vs Junction Temp 5 200% 4 0.000 3 -0.050 150% 2 -0.100 1 -0.150 100% 0 -0.200 -1 -0.250 50% -2 -0.300 25 Voltage Shift vs Junction Temperature Relative Intensity vs. Forward Current Voltage Shift vs Junction Temperature 0.000 -0.050 -0.100 Voltage Shift (V) Voltage Shift (V) Dominant Relative LightWavelength Intensity Shift (nm) 6 50 75 100 125 150 -0.400 0 25 50 100 50 75 -0.250 -0.300 -0.400 150 If (mA) 100 -0.200 -0.350 Junction Temperature (°C) -0.350 0% -0.150 25 200 125 50 75 100 125 150 Junction Temperature (°C) 150 Junction Temperature (°C) Relative Light Intensity Vs Junction Temperature Dominant Wavelength Shift vs Junction Temp 6 Dominant Wavelength Shift (nm) Relative Light Dominant Wavelength ShiftIntensity (nm) 100% Wavelength Shift vs. Forward Current 95% 3 90% 2 85% 1 80% 0 75% -1 70% -2 25 50 75 100 125 5 4 3 2 1 0 -1 -2 150 25 Junction Temperature (°C) -3 0 50 100 50 75 100 125 150 Junction Temperature (°C) 150 200 If (mA) Relative Light Intensity Vs Junction Temperature 100% 4 CPR3EX Rev. - t Intensity Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the 95% Cree logo are registered trademarks, and TM and TR5050M are trademarks of Cree, Inc. 90% Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Radiation Pattern This is a representative radiation pattern for the TR5050M LED product. Actual patterns will vary slightly for each chip. Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TM and TR5050M are trademarks of Cree, Inc. 5 CPR3EX Rev. - Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com