UTC DTA124EL-AE3-R Pnp digital transistor (built-in resistors) Datasheet

UNISONIC TECHNOLOGIES CO.,
DTA124E
PNP EPITAXIAL SILICON TRANSISTOR
PNP DIGITAL TRANSISTOR
(BUILT-IN RESISTORS)
FEATURES
*Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistors (see the
equivalent circuit).
*The bias resistors consist of thin-film resistors with complete
isolation to allow positive biasing of the input. They also have
the advantage of almost completely eliminating parasitic
effects.
*Only the on / off conditions need to be set for operation,
making device design easy.
EQUIVALENT CIRCUIT
1
3
SOT-23
MARKING
OUT
R1
IN
2
*Pb-free plating product number:DTA124EL
AC4
R2
PIN CONFIGURATION
GND(+)
IN
PIN NO.
PIN NAME
1
GND
2
IN
3
OUT
OUT
GND(+)
ORDERING INFORMATION
Order Number
Normal
Lead free
DTA124E-AE3-R DTA124EL-AE3-R
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co.,
Package
Packing
SOT-23
Tape Reel
1
QW-R206-044,B
DTA124E
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (Ta = 25℃)
PARAMETER
Supply Voltage
Input Voltage
Output Current
Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
VCC
VIN
IC
IO
PD
TJ
TSTG
RATINGS
-50
-40 ~ +10
-100
-30
200
150
-40 ~ +150
UNIT
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.)
PARAMETER
SYMBOL
VI(off)
Input Voltage
VI(ON)
Output Voltage
VO(ON)
Input Current
II
Output Current
IO(off)
DC Current Gain
GI
Input Resistance
R1
Resistance Ratio
R2/R1
Transition Frequency
fT
*Transition frequency of the device
TEST CONDITIONS
VCC= -5V, IOUT= -100μA
VOUT= -0.2V, IOUT= -5mA
IOUT/IIN= -10mA / -0.5 mA
VIN= -5V
VCC= -50V , VIN=0V
VOUT= -5V, IOUT= -5mA
VCE= -10 V, IE= 5mA, f=100MHz *
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX
-0.5
UNIT
-0.1
-0.3
-0.36
-0.5
V
mA
μA
22
1
250
28.6
1.2
kΩ
-3
56
15.4
0.8
V
MHz
2
QW-R206-044,B
DTA124E
TYPICAL CHARACTERICS
Fig.1 Input voltage vs.output current
(ON characterristics)
Fig.2 Output current vs Input voltage
.(OFF characterristics)
-10m
-100
Vo=-0.3V
-50
Output Current :Io(A)
Input Voltage :V I(ON) V
-10
-5
-2
T a= - 40 ℃
25 ℃
100 ℃
-1
Vcc=-5V
-5m
-20
Ta=100℃
25℃
-40 ℃
-2m
-1m
-500μ
-200μ
-100μ
-50μ
-20μ
-10μ
-5μ
-500m
-200m
-2μ
-100m
-100μ
-1μ
-20 0μ- 500μ -1m -2m
-5m
-10m -20m
-50m -100m
0
200
Vo=-5V
T a=100℃
25℃
-40 ℃
-2.0
-2.5
-3.0
V
lo/lI=20
-500m
100
50
20
10
5
-200m
-100m
T a=100℃
25℃
-40℃
-50m
-20m
-10m
-5m
-2m
2
1
-100μ
-1.5
-1
Output Voltage :V O(ON) V
500
-1.0
Fig.4Output voltage vs.output current
Fig.3 DC current gain vs.output current
1k
-0.5
Input Voltage :V I(OFF)
Output Current :Io(A)
DC Current Gain: G I
■
PNP EPITAXIAL SILICON TRANSISTOR
-20 0μ -50 0μ-1m -2m
-5m
-10m -20m
-50m -100m
Output Current :Io(A)
-1m
-100μ
-2 00μ -500 μ-1m -2m
-5m
-10m -20m
-50m -100m
Output Current :Io(A)
UTC assum es no responsibility for equipm ent failures that result from using products at v alues that
ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all UT C products described or contained
herein. UT C products are not designed for use in life support appliances, dev ices or system s where
m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation
presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3
QW-R206-044,B
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