BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector Emitter Sustaining Voltage − @ 100 mAdc • • • VCEO(sus) = 80 Vdc (Min) − BDX53B, 54B VCEO(sus) = 100 Vdc (Min) − BDX53C, 54C Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc Monolithic Construction with Built−In Base−Emitter Shunt Resistors These Devices are Pb−Free and are RoHS Compliant* www.onsemi.com DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80−100 VOLTS, 65 WATTS 4 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Rating Symbol Collector−Emitter Voltage BDX53B, BDX54B BDX53C, BDX54C VCEO Collector−Base Voltage BDX53B, BDX54B BDX53C, BDX54C VCB Emitter−Base Voltage VEB 5.0 Vdc IC 8.0 12 Adc Base Current IB 0.2 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 65 0.48 W W/°C TJ, Tstg −65 to +150 °C Collector Current − Continuous − Peak Operating and Storage Junction Temperature Range Value 1 Unit Vdc Vdc 80 100 MARKING DIAGRAM & PIN ASSIGNMENT 4 Collector BDX5xyG AY WW Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 70 °C/W Thermal Resistance, Junction−to−Case RqJC 1.92 °C/W *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 November, 2014 − Rev. 15 1 3 TO−220 CASE 221A STYLE 1 80 100 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 2 1 Base BDX5xy = A Y WW G = = = = 3 Emitter 2 Collector Device Code x = 3 or 4 y = B or C Assembly Location Year Work Week Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Publication Order Number: BDX53B/D PD, POWER DISSIPATION (WATTS) BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) TA 4.0 TC 80 3.0 60 TC 2.0 40 1.0 20 TA 0 0 20 40 60 80 100 120 140 160 T, TEMPERATURE (°C) Figure 1. Power Derating ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Max 80 100 − − − − 0.5 0.5 − − 0.2 0.2 hFE 750 − − Collector−Emitter Saturation Voltage (IC = 3.0 Adc, IB = 12 mAdc) VCE(sat) − − 2.0 4.0 Vdc Base−Emitter Saturation Voltage (IC = 3.0 Adc, IC = 12 mA) VBE(sat) − 2.5 Vdc hfe 4.0 − − − − 300 200 Characteristic Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) (IC = 100 mAdc, IB = 0) VCEO(sus) BDX53B, BDX54B BDX53C, BDX54C Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) BDX53B, BDX54B BDX53C, BDX54C Collector Cutoff Current (VCB = 80 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0) BDX53B, BDX54B BDX53C, BDX54C Vdc ICEO mAdc ICBO mAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 3.0 Adc, VCE = 3.0 Vdc) DYNAMIC CHARACTERISTICS Small−Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob BDX53B, 53C BDX54B, 54C pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. www.onsemi.com 2 BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) 5.0 VCC - 30 V RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPES, e.g.: 1N5825 USED ABOVE IB [ 100 mA MSD6100 USED BELOW IB [ 100 mA TUT RB V2 2.0 SCOPE t, TIME (s) μ RC APPROX + 8.0 V 0 51 V1 D1 [ 8.0 k [ 120 tf 1.0 0.7 0.5 0.3 tr 0.2 + 4.0 V 25 ms -12 V tr, tf v 10 ns DUTY CYCLE = 1.0% ts 3.0 APPROX for td and tr, D1 is disconnected and V2 = 0 For NPN test circuit reverse all polarities 0.1 0.07 0.05 0.1 VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25°C 0.2 Figure 2. Switching Time Test Circuit td @ VBE(off) = 0 V 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 3. Switching Times 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 P(pk) 0.05 0.1 0.07 0.05 RqJC(t) = r(t) RqJC RqJC = 1.92°C/W 0.02 t1 0.03 0.01 0.02 SINGLE PULSE t2 SINGLE PULSE DUTY CYCLE, D = t1/t2 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 50 100 200 300 500 1000 Figure 4. Thermal Response IC, COLLECTOR CURRENT (AMP) 20 5.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 1.0 There are two limitations on the power handling ability of a transistor average junction temperature and second breakdown. Safe operating area curves indicate IC −VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) t 150°C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 ms 500 ms 10 5.0 ms 1.0 ms dc TJ = 150°C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO BDX53B, BDX54B BDX53C, BDX54C 20 30 2.0 3.0 5.0 7.0 10 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 Figure 5. Active−Region Safe Operating Area www.onsemi.com 3 BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) 300 TJ = + 25°C 5000 3000 2000 200 C, CAPACITANCE (pF) hFE, SMALL-SIGNAL CURRENT GAIN 10,000 1000 500 300 200 TJ = 25°C VCE = 3.0 V IC = 3.0 A 100 50 30 20 10 1.0 Cob 100 Cib 70 50 PNP NPN 2.0 5.0 PNP NPN 10 20 50 100 f, FREQUENCY (kHz) 200 500 30 0.1 1000 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Small-Signal Current Gain PNP BDX54B, 54C 20,000 20,000 VCE = 4.0 V VCE = 4.0 V 10,000 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 10,000 3000 2000 100 Figure 7. Capacitance NPN BDX53B, 53C 5000 50 TJ = 150°C 25°C 1000 -55°C 5000 TJ = 150°C 3000 2000 25°C 1000 -55°C 500 500 300 200 0.1 300 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8. DC Current Gain 3.0 TJ = 25°C 2.6 IC = 2.0 A 4.0 A 6.0 A 2.2 1.8 1.4 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 3.0 TJ = 25°C 2.6 IC = 2.0 A 6.0 A 2.2 1.8 1.4 1.0 0.3 0.5 0.7 1.0 Figure 9. Collector Saturation Region www.onsemi.com 4 4.0 A 2.0 3.0 5.0 7.0 IB, BASE CURRENT (mA) 10 20 30 BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) 3.0 3.0 TJ = 25°C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) TJ = 25°C 2.0 VBE(sat) @ IC/IB = 250 1.5 VBE @ VCE = 4.0 V 1.0 VCE(sat) @ IC/IB = 250 2.5 2.0 1.5 VBE @ VCE = 4.0 V 1.0 VBE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 0.5 10 0.1 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) Figure 10. “On” Voltages PNP BDX54B, BDX54C +5.0 +4.0 θV, TEMPERATURE COEFFICIENT (mV/ °C) θV, TEMPERATURE COEFFICIENT (mV/ °C) NPN BDX53B, BDX53C *IC/IB v hFE/3 +3.0 25°C to 150°C +2.0 +1.0 -55°C to 25°C 0 *qVC for VCE(sat) -1.0 -2.0 25°C to 150°C -3.0 qVB for VBE -55 to 150°C -4.0 -5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 +5.0 +4.0 25°C to 150°C +2.0 +1.0 -55°C to 25°C 0 *qVC for VCE(sat) -1.0 -2.0 25°C to 150°C -3.0 qVB for VBE -55 to 150°C -4.0 -5.0 7.0 10 *IC/IB v hFE/3 +3.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 11. Temperature Coefficients 104 103 105 REVERSE FORWARD IC, COLLECTOR CURRENT (A) μ IC, COLLECTOR CURRENT (A) μ 105 VCE = 30 V 102 TJ = 150°C 101 100 10-1 100°C 25°C -0.6 -0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 104 103 VCE = 30 V 102 101 TJ = 150°C 100°C 100 25°C 10-1 +0.6 +0.4 +0.2 +1.0 +1.2 + 1.4 FORWARD REVERSE VBE, BASE‐EMITTER VOLTAGE (VOLTS) 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 VBE, BASE‐EMITTER VOLTAGE (VOLTS) Figure 12. Collector Cut−Off Region www.onsemi.com 5 BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) NPN BDX53B BDX53C COLLECTOR PNP BDX54B BDX54C BASE COLLECTOR BASE [ 8.0 k [ 120 [ 8.0 k [ 120 EMITTER EMITTER Figure 13. Darlington Schematic ORDERING INFORMATION Package Shipping† BDX53BG TO−220 (Pb−Free) 50 Units / Rail BDX53CG TO−220 (Pb−Free) 50 Units / Rail BDX54BG TO−220 (Pb−Free) 50 Units / Rail BDX54CG TO−220 (Pb−Free) 50 Units / Rail Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 6 BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 N STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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