Comset BDT63 Silicon darlington power transistor Datasheet

SEMICONDUCTORS
BDT63-A-B-C
SILICON DARLINGTON POWER TRANSISTORS
NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220
envelope. They are intended for output stages in audio equipment, general amplifiers, and
analogue switching application.
PNP complements are BDT62-A-B-C
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
Value
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
60
80
100
120
60
80
100
120
Unit
V
V
BDT63
BDT63A
VEBO
Emitter-Base Voltage
BDT63B
5
V
10
A
15
A
BDT63C
BDT63
BDT63A
IC
Collector Current
BDT63B
BDT63C
BDT63
BDT63A
ICM
Collector Peak Current
BDT63B
BDT63C
26/09/2012
COMSET SEMICONDUCTORS
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SEMICONDUCTORS
BDT63-A-B-C
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
IB
Base Current
PT
Power Dissipation
TJ
Junction Temperature
Ts
@ Tmb < 25°
Storage Temperature range
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
Value
Unit
250
mA
90
W
150
°C
-65 to +150
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-MB
From junction to mounting base
RthJ-A
From junction to ambient in free air
26/09/2012
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
COMSET SEMICONDUCTORS
Value
Unit
1.39
K/W
70
K/W
2|5
SEMICONDUCTORS
BDT63-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
IE= 0, VCB = VCBOmax
ICBO
Collector Cutoff
Current
IE= 0, VCB =1/2
VCBOmax
TJ= 150 °C
ICEO
Collector Cutoff
Current
IE= 0, VCE = 1/2
VCEOmax
IEBO
Emitter Cutoff
Current
VEB= 5 V, IC= 0
VCEO
Collector-Emitter
Breakdown Voltage
IC= 30 mA, IB= 0
IC= 3 A, IB= 12 mA
VCE(SAT)
Collector-Emitter
saturation Voltage (*)
IC= 8 A, IB=80 mA
26/09/2012
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
COMSET SEMICONDUCTORS
Min
Typ
Max
Unit
-
-
0.2
mA
-
-
2
mA
-
-
0.5
mA
-
-
5.0
mA
60
80
100
120
-
-
V
-
-
2
V
-
-
2.5
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SEMICONDUCTORS
BDT63-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VBE(on)
Ratings
Base-Emitter Voltage
IC= 3 A, VCE= 3 V
(*)
VCE= 3.0 V, IC= 3 A
hFE
DC Current Gain (*)
VCE= 3.0 V, IC= 10 A
VECF
C-E Diode Forward
Voltage
IF= 3 A
COB
Output Capacitance
IE= 0, VCB = 10 V
ftest= 1MHz
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
BDT63
BDT63A
BDT63B
BDT63C
Min
Typ
Max
Unit
-
-
2.5
V
1000
-
-
-
3000
-
-
-
2
V
-
100
-
pF
Min
Typ
Max
Unit
-
1
5
2.5
10
µs
SWITCHING TIMES
Symbol
ton
toff
Ratings
turn-on time
turn-off time
Test Condition(s)
IC= 3 A , VCC= 10 V
IB1 = -IB2 = 12 mA
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
26/09/2012
COMSET SEMICONDUCTORS
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SEMICONDUCTORS
BDT63-A-B-C
MECHANICAL DATA CASE TO-220
DIMENSIONS (mm)
A
B
C
D
E
F
G
H
L
M
N
P
R
S
T
U
Min.
Max.
9,90
15,65
13,20
6,45
4,30
2,70
2,60
15,75
1,15
3,50
0,46
2,50
4,98
2.49
0,70
10,30
15,90
13,40
6,65
4,50
3,15
3,00
17.15
1,40
3,70
1,37
0,55
2,70
5,08
2.54
0,90
Pin 1 :
Pin 2 :
Pin 3 :
Package
Base
Collector
Emitter
Collector
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
26/09/2012
[email protected]
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