FAST RECOVERY DIODE AFF450K INSULATED MODULE Repetitive voltage up to *Full ermetic packaging *Industrial compatible packaging *Insulation using Aln substrate *6KVrms insulation voltage available on request *Contact screws avaliable on request Mean on-state current 4500 V 448 A Surge current 10 kA FINAL SPECIFICATION apr 17 - ISSUE : 2 Symbol Characteristic Tj [°C] Conditions Value Unit BLOCKING V RRM Repetitive peak reverse voltage 150 4500 V V RSM Non-repetitive peak reverse voltage 150 4600 V I RRM Repetitive peak reverse current 150 50 mA CONDUCTING I F (AV) Mean on-state current 180° sin, 50Hz, Tc=100°C I F (AV) Mean on-state current 180° sin. 50Hz, Tc=55°C I FSM Surge on-state current sine wave, 10 ms I² t I² t without reverse voltage V F On-state voltage On-state current = V F(TO) Threshold voltage F On-state slope resistance r Q rr Reverse recovery charge I rr Peak reverse recovery current t rr V FR IF= 448,5 150 1500 A 1000 A A 703,3 A 10,0 kA 500 x1E3 A²s 150 2,525 V 150 1,40 V 150 0,750 mohm 150 1600 µC 150 A/µs 100 V 150 500 A Reverse recovery time di/dt= VR = 150 6,4 µs Peak forward recovery di/dt= 400 A/µs 150 60 µs 50 °C/kW MOUNTING R th(j-c) Thermal impedance Junction to case, per element R th(c-h) Thermal impedance Case to heatsink, per element T j Operating junction temperature V ins RMS insulation voltage 50Hz, circuit to base,all terminal shorted Mounting tourque Case to heatsink Busbars to terminals T Mass ORDERING INFORMATION : AFF450K S 45 standard specification VRRM/100 25 20 °C/kW -30 / 150 °C 4500 V 4 to 6 12 to 18 1500 Nm Nm g (*) 6000V available on request. Add HVI to the desired code in phase of order, i.e. AFF230HVIS26 Thermal impedance FAST DIODE MODULE FINAL SPECIFICATION apr 17 - ISSUE : 2 SWITCHING CHARACTERISTICS FORWARD RECOVERY VOLTAGE 90 Tj =150°C 80 70 50 IF 40 VFR 30 VF 20 10 0 0 200 400 600 800 1000 1200 di/dt [A/µs] REVERSE RECOVERY CHARGE Tj = 150 °C REVERSE RECOVERY CURRENT Tj = 150 °C 900 2000 800 1000 A 1600 1000 A 700 500 A 500 A 600 1200 Irr [A] Qrr [µC] VFR [V] 60 800 500 400 300 400 200 100 0 0 100 200 300 di/dt [A/µs] 400 0 0 100 200 300 400 di/dt [A/µs] ta = Irr / (di/dt) tb = trr - ta IF d i/d t ta tb Softness (s factor) s = tb / ta Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 ) Irr Vr AFF450K FAST RECOVERY DIODE FINAL SPECIFICATION apr 17 - ISSUE : 2 SURGE CHARACTERISTIC Tj = 150 °C ON-STATE CHARACTERISTIC Tj = 150 °C 12 1400 10 8 1000 ITSM [kA] On-state Current [A] 1200 800 600 6 4 400 2 200 0 0 1 1,5 2 2,5 1 On-state Voltage [V] 10 n° cycles TRANSIENT THERMAL IMPEDANCE 60,0 Zth j-c [°C/kW] 50,0 40,0 30,0 20,0 10,0 0,0 0,001 0,1 10 t[s] All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO SPA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. Distributed by 100