Diode Semiconductor Korea BY500-100(Z)---BY500-1000(Z) VOLTAGE RANGE: 100 --- 1000 V CURRENT: 5.0 A FAST RECOVERY RECTIFIERS FEATURES Low cost DO - 27 Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC DO-27,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight:0.041 ounces,1.15 grams Mounting position: Any Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. BY500 -100 BY500 -200 BY500 -400 BY500 -600 BY500 -800 BY500 -1000 UNITS Maximum recurrent peak reverse voltage VRRM 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 100 200 400 600 800 1000 V Maximum average forw ard rectified current 9.5mm lead length, @TA=75 IF(AV) 5.0 A IFSM 200.0 A VF 1.3 V Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous forw ard voltage @ 5.0 A Maximum reverse current at rated DC blocking voltage @TA=25 @TA=100 IR 10.0 1000.0 A Maximum reverse recovery time (Note1) t rr 200 ns Typical junction capacitance (Note2) CJ 55 pF Typical thermal resistance (Note3) Rθ JA 15 Operating junction temperature range Storage temperature range TJ -55---- + 150 TSTG - 55---- + 150 /W NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A. 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. www.diode.kr Diode Semiconductor Korea BY500-100(Z)- - -BY500-1000(Z) FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 N.1. trr 10 N.1. +0.5A D.U.T. (+) 50VDC (APPROX) (-) ( - ) 0 PULSE GENERATOR (NOTE2) OSCILLOSCOPE (NOTE 1) 1 N.1. -0.25A ( + ) -1.0A 1cm NOTES:1.RISE TIME=7ns MAX. INPUT IMPEDANCE=1M .22pF 2.RISE TIME=10ns MAX. SOURCEIMPEDANCE=5O SET TIMEBASE FOR 50/100 ns /cm FIG.3 --PEAK FORWARD SURGE CURRENT 8 7 6 5 4 3 2 S in g le P h a s e H a lf W a v e 6 0 H R e s is t iv e o r In d u c tiv e L o a d 1 Z 0 0 25 50 75 100 125 150 175 PEAK FORWARD SURGE CURRENT AMPERES AVERAGE FORWARD CURRENT AMPERES FIG.2 --FORWARD DERATING CURVE 200 175 TJ=125 8.3ms Single Half Sine-Wave 150 125 100 75 50 25 0 1 AMBIENT TEMPERATURE, 20 40 60 80 100 FIG.5-- TYPICAL JUNCTION CAPACITANCE 20 10 4 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 INSTANTANEOUS FORWARD VOLTAGE,VOLTS JUNCTION CAPACITANCE,pF INSTANTANEOUS FORWARD CURRENT AMPERES 8 10 200 TJ=25 Pulse Width=300uS 40 0.1 4 NUMBER OF CYCLES AT 60 Hz FIG.4--TYPICAL FORWARD CHARACTERISTIC 100 2 100 60 40 20 10 6 4 TJ=25 f=1MHz 2 1 0.1 0.2 0.4 1 2 4 10 20 40 100 REVERSE VOLTAGE,VOLTS www.diode.kr