Formosa MS BZX55C2V4 THRU BZX55C100 Zener Diode List List................................................................................................. 1 Package outline............................................................................... 2 Features.......................................................................................... 2 Mechanical data............................................................................... 2 Maximum ratings .............................................................................. 2 Electrical characteristics................................................................... 3 Rating and characteristic curves........................................................ 4~5 Pinning information........................................................................... 6 Taping & bulk specifications for AXIAL devices.................................... 6 Suggested thermal profiles for soldering processes............................. 7 High reliability test capabilities........................................................... 8 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 1 Document ID Issued Date Revised Date Revision Page. DS-222713 2008/02/10 2010/03/10 B 8 Formosa MS BZX55C2V4 THRU BZX55C100 Zener Diode 500mW Axial Lead Zener Diodes - 2.4V-100V Package outline Features DO-35G • Silicon epitaxial planar chip structure. • Glass hermetically sealed package. • Wide zener reverse voltage range 2.4V to 100V. • V Tolerance Selection of ±5% • Small package size for high density applications. • Ideally suited for automated assembly processes. • Lead-free parts meet environmental standards of 0.022 (0.56) 0.018 (0.45) DIA. Z 1.02 (26.0) MIN. MIL-STD-19500 /228 0.166 (4.2) MAX. 0.087 (2.2) DIA. MAX. Mechanical data • Case : Glass, DO-35G • Terminals :Plated terminals, solderable per MIL-STD-750, 1.02 (26.0) MIN. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.125 gram Dimensions in inches and (millimeters) Maximum ratings (at T =25 C unless otherwise noted) o A PARAMETER Forward voltage Power Dissipation CONDITIONS MIN. TYP. MAX. UNIT I F = 200 mA VF 1.50 V I=4mm TL≤25℃ PD 500 mW Operating junction temperature range TJ Storage temperature range Http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Symbol T STG Page 2 -55 -65 +150 o C +175 o C Document ID Issued Date Revised Date Revision Page. DS-222713 2008/02/10 2010/03/10 B 8 Formosa MS BZX55C2V4 THRU BZX55C100 Zener Diode Electrical characteristics (at T =25 C unless otherwise noted) o A Part No. Marking code Zener voltage Test current Zener impedance V Z @ I ZT (Volts) I ZT Z ZT @ I ZT Z ZK @ I ZK (Ω)Max Leakage current I ZK Min. Nom. Max. mA (Ω)Max mA BZX55C2V4 2.28 2.4 2.52 5.0 85 600 0.25 BZX55C2V7 BZX55C2V7 2.57 2.7 2.84 5.0 85 600 BZX55C3V0 BZX55C3V0 2.85 3.0 3.15 5.0 90 600 BZX55C3V3 BZX55C3V3 3.14 3.3 3.47 5.0 90 BZX55C3V6 BZX55C3V6 3.42 3.6 3.78 5.0 90 BZX55C3V9 BZX55C3V9 3.71 3.9 4.10 5.0 BZX55C4V3 BZX55C4V3 4.09 4.3 4.52 5.0 BZX55C2V4 IR VR (uA)Max Volts 50 1.0 0.25 10 1.0 0.25 4.0 1.0 600 0.25 2.0 1.0 600 0.25 2.0 1.0 90 600 0.25 2.0 1.0 90 600 0.25 1.0 1.0 BZX55C4V7 BZX55C4V7 4.47 4.7 4.94 5.0 80 600 0.25 0.5 1.0 BZX55C5V1 BZX55C5V1 4.85 5.1 5.36 5.0 60 550 0.25 0.1 1.0 BZX55C5V6 BZX55C5V6 5.32 5.6 5.88 5.0 40 450 0.25 0.1 1.0 BZX55C6V2 BZX55C6V2 5.89 6.2 6.51 5.0 10 200 0.25 0.1 2.0 BZX55C6V8 BZX55C6V8 6.46 6.8 7.14 5.0 8 150 0.25 0.1 3.0 BZX55C7V5 BZX55C7V5 7.13 7.5 7.88 5.0 7 50 0.25 0.1 5.0 BZX55C8V2 BZX55C8V2 7.79 8.2 8.61 5.0 7 50 0.25 0.1 6.2 BZX55C9V1 BZX55C9V1 8.65 9.1 9.56 5.0 10 50 0.25 0.1 6.8 BZX55C10 BZX55C10 9.50 10 10.50 5.0 15 70 0.25 0.1 7.5 BZX55C11 BZX55C11 10.45 11 11.55 5.0 20 70 0.25 0.1 8.2 BZX55C12 BZX55C12 11.40 12 12.60 5.0 20 90 0.25 0.1 9.1 BZX55C13 BZX55C13 12.35 13 13.65 5.0 26 110 0.25 0.1 10 BZX55C15 BZX55C15 14.25 15 15.75 5.0 30 110 0.25 0.1 11 BZX55C16 BZX55C16 15.20 16 16.80 5.0 40 170 0.25 0.1 12 BZX55C18 BZX55C18 17.10 18 18.90 5.0 50 170 0.25 0.1 13 BZX55C20 BZX55C20 19.00 20 21.00 5.0 55 220 0.25 0.1 15 BZX55C22 BZX55C22 20.90 22 23.10 5.0 55 220 0.25 0.1 16 BZX55C24 BZX55C24 22.80 24 25.20 5.0 80 220 0.25 0.1 18 BZX55C27 BZX55C27 25.65 27 28.35 5.0 80 220 0.25 0.1 20 BZX55C30 BZX55C30 28.50 30 31.50 5.0 80 220 0.25 0.1 22 BZX55C33 BZX55C33 31.35 33 34.65 5.0 80 220 0.25 0.1 24 BZX55C36 BZX55C36 34.20 36 37.80 5.0 80 220 0.25 0.1 27 BZX55C39 BZX55C39 37.05 39 40.95 2.5 90 500 0.25 0.1 30 BZX55C43 BZX55C43 40.85 43 45.15 2.5 90 600 0.50 0.1 33 BZX55C47 BZX55C47 44.65 47 49.35 2.5 110 700 0.50 0.1 36 BZX55C51 BZX55C51 48.45 51 53.55 2.5 125 700 0.50 0.1 39 BZX55C56 BZX55C56 53.20 56 58.80 2.5 135 1000 0.50 0.1 43 BZX55C62 BZX55C62 58.90 62 65.10 2.5 150 1000 0.50 0.1 47 BZX55C68 BZX55C68 64.60 68 71.40 2.5 200 1000 0.50 0.1 51 BZX55C75 BZX55C75 71.25 75 78.75 2.5 250 1500 0.50 0.1 56 BZX55C82 BZX55C82 77.90 82 86.10 2.5 300 2000 0.50 0.1 62 BZX55C91 BZX55C91 86.45 91 95.55 1.0 450 5000 0.10 0.1 68 BZX55C100 BZX55C100 95.00 100 105.0 1.0 450 5000 0.10 0.1 75 Note : 5% tolerance of Zener voltage http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 3 Document ID Issued Date Revised Date Revision Page. DS-222713 2008/02/10 2010/03/10 B 8 Rating and characteristic curves (BZX55C2V4 THRU BZX55C100) FIG.1-TOTAL POWER DISSIPATION VS. AMBIENT TEMPERATURE FIG. 2-TYPICAL CHANGE OF WORKING VOLTAGE o UNDER OPERATING CONDITIONS AT T A =25 C 1000 500 VOLTAGE CHANGE (mV) TOTAL POWER DISSIPATION (mW) 600 400 300 200 I Z = 5mA 100 10 100 0 0 0 40 80 120 160 200 0 5 o 15 20 25 ZENER VOLTAGE (V) FIG. 3-TYPICAL CHANGE OF WORKING VOLTAGE VS. JUNCTION TEMPERATURE FIG. 4-TEMPERATURE COEFFICIENT OF VZ VS. Z-VOLTAGE 15 -4 TEMPERATURE COEFFICIENT (10 / K) 1.3 RELATIVE VOLTAGE CHANGE 10 AMBIENT TEMPERATURE ( C) 1.2 -4 10 x 10 /K -4 8 x 10 /K -4 6 x 10 /K 1.1 -4 4 x 10 /K -4 2 x 10 /K 0 -4 -2 x 10 /K -4 -4 x 10 /K 1.0 0.9 0.8 10 I Z = 5mA 5 0 -5 -60 0 60 120 180 240 0 o JUNCTION TEMPERATURE ( C) 10 20 30 40 50 ZENER VOLTAGE (V) FIG. 5-DIODE CAPACITANCE VS. Z-VOLTAGE DIODE CAPACITANCE (pF) 200 150 100 50 0 0 5 10 15 20 25 ZENER VOLTAGE (V) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 4 Document ID Issued Date Revised Date Revision Page. DS-222713 2008/02/10 2010/03/10 B 8 Rating and characteristic curves (BZX55C2V4 THRU BZX55C100) FIG. 7-Z-CURRENT VS. Z-VOLTAGE 100 50 10 40 ZENER CURRENT (mA) FORWARD CURRENT (mA) FIG. 6-FORWARD CURRENT VS. FORWARD VOLTAGE 1 0.1 P tot = 500mW 30 20 10 0.01 0.001 0 0 0.2 0.4 0.6 0.8 1.0 15 25 30 35 ZENER VOLTAGE (V) FIG. 8-Z-CURRENT VS. Z-VOLTAGE FIG. 9-DIFFERENTIAL Z-RESISTANCE VS. Z-VOLTAGE 1000 DIFFERENTIAL Z-RESISTANCE (ohm) 100 80 P tot = 500mW 60 40 20 0 I Z = 1mA 100 I Z = 5mA 10 I Z = 10mA 1 0 4 8 12 16 20 0 5 ZENER VOLTAGE (V) 10 15 20 25 ZENER VOLTAGE (V) FIG. 10-THERMAL RESPONSE THERMAL RESISTANCE FOR PULSE Cond. (K/W) ZENER CURRENT (mA) 20 FORWARD VOLTAGE (V) 1000 t p / T= 0.5 100 t p / T= 0.2 Single Pulse t p / T= 0.01 10 t p / T= 0.1 t p / T= 0.02 t p / T= 0.05 1 0.1 1 10 100 1000 PULSE LENGTH (mS) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 5 Document ID Issued Date Revised Date Revision Page. DS-222713 2008/02/10 2010/03/10 B 8 Formosa MS BZX55C2V4 THRU BZX55C100 Zener Diode Pinning information Pin Pin1 Pin2 Simplified outline cathode anode Symbol 1 2 1 2 Taping & bulk specifications for AXIAL devices 52.4mm/ 26.2mm 17mm DIA. 55mm Max. A 17mm DIA. 72mm DIA. 71mm Max. 355mm OFF Center both sids 1.0mm Max OFF Alignment 1.2mm 6.3mm REEL PACKING DEVICE Q'TY 1 COMPONENT CARTON Q'TY 2 APPROX. CASE (PCS / REEL) SPACING SIZE (PCS / CARTON) CROSS "A" in FIG. A (m/m) TYPE DO-35G/52mm 5,000 5 mm 360 * 340 * 370 WEIGHT(kg) 20,000 7.3 AMMO PACKING DEVICE Q'TY 1 INNER CARTON Q'TY 2 APPROX. CASE (PCS / BOX) BOX SIZE SIZE (PCS / CARTON) CROSS (m/m) (m/m) TYPE WEIGHT(kg) DO-35G/26mm 5,000 250 * 78 *48 420 * 270 * 330 150,000 16.7 DO-35G/52mm 5,000 250 *7 8 *78 420 * 270 * 330 100,000 15.0 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 6 Document ID Issued Date Revised Date Revision Page. DS-222713 2008/02/10 2010/03/10 B 8 Formosa MS BZX55C2V4 THRU BZX55C100 Zener Diode BULK PACKING DEVICE Q'TY 1 INNER CARTON Q'TY 2 APPROX. CASE (PCS / BOX) BOX SIZE SIZE (PCS / CARTON) CROSS TYPE (m/m) DO-35G 2,000 WEIGHT(kg) (m/m) 96 * 80 * 42 410 * 335 * 265 120,000 17.4 Suggested thermal profiles for soldering processes 1.Lead free temperature profile wave-soldering 280 Peak soldering temperature not to exceed 260ºC 260 240 220 Temperature(°C) 200 180 160 140 120 Peak Max well time 5 Max 100 80 Cool Down Max gradient-4ºC/s Suggested gradient - 2ºC/s or less 60 40 20 Preheat Max gradient 2ºC/s 0 0 20 40 60 80 100 120 140 160 180 200 220 240 Time(Sec) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 7 Document ID Issued Date Revised Date Revision Page. DS-222713 2008/02/10 2010/03/10 B 8 Formosa MS BZX55C2V4 THRU BZX55C100 Zener Diode High reliability test capabilities Item Test Conditions Reference o 1. Solder Resistance at 260±5 C for 10±2sec. immerse body into solder 1/16"±1/32" MIL-STD-750D METHOD-2031 2. Solderability at 245±5 oC for 5 sec. MIL-STD-202F METHOD-208 3. Pull Test 0.25kg in axial lead direction for 10 sec. MIL-STD-750D METHOD-2036 4. Bend Lead 0.25kg weight applied to each lead bending arc 90 o±5 o for 3 times. MIL-STD-750D METHOD-2036 5. High Temperature Reverse Bias V R=80% rate at T J=150 oC for 168 hrs. MIL-STD-750D METHOD-1038 6. Pressure Cooker 15P SIG at T A=121 oC for 4 hrs. JESD22-A102 7. Temperature Cycling -55 oC to +125 oC dwelled for 30 min. and transferred for 5min. total 10 cycles. 8. Thermal Shock 0 oC for 5 min. rise to 100 oC for 5 min. total 10 cycles. 9. Humidity at T A=85 oC, RH=85% for 1000hrs. 10. High Temperature Storage Life at 175 oC for 1000 hrs. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 MIL-STD-750D METHOD-1051 Page 8 MIL-STD-750D METHOD-1056 MIL-STD-750D METHOD-1021 MIL-STD-750D METHOD-1031 Document ID Issued Date Revised Date Revision Page. DS-222713 2008/02/10 2010/03/10 B 8