Formosa BZX55C47 Zener diode Datasheet

Formosa
MS
BZX55C2V4 THRU BZX55C100
Zener Diode
List
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings .............................................................................. 2
Electrical characteristics................................................................... 3
Rating and characteristic curves........................................................ 4~5
Pinning information........................................................................... 6
Taping & bulk specifications for AXIAL devices.................................... 6
Suggested thermal profiles for soldering processes............................. 7
High reliability test capabilities........................................................... 8
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 1
Document ID
Issued Date
Revised Date
Revision
Page.
DS-222713
2008/02/10
2010/03/10
B
8
Formosa
MS
BZX55C2V4 THRU BZX55C100
Zener Diode
500mW Axial Lead Zener
Diodes - 2.4V-100V
Package outline
Features
DO-35G
• Silicon epitaxial planar chip structure.
• Glass hermetically sealed package.
• Wide zener reverse voltage range 2.4V to 100V.
• V Tolerance Selection of ±5%
• Small package size for high density applications.
• Ideally suited for automated assembly processes.
• Lead-free parts meet environmental standards of
0.022 (0.56)
0.018 (0.45) DIA.
Z
1.02 (26.0)
MIN.
MIL-STD-19500 /228
0.166 (4.2)
MAX.
0.087 (2.2)
DIA.
MAX.
Mechanical data
• Case : Glass, DO-35G
• Terminals :Plated terminals, solderable per MIL-STD-750,
1.02 (26.0)
MIN.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.125 gram
Dimensions in inches and (millimeters)
Maximum ratings (at T =25 C unless otherwise noted)
o
A
PARAMETER
Forward voltage
Power Dissipation
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I F = 200 mA
VF
1.50
V
I=4mm TL≤25℃
PD
500
mW
Operating junction temperature range
TJ
Storage temperature range
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TEL:886-2-22696661
FAX:886-2-22696141
Symbol
T STG
Page 2
-55
-65
+150
o
C
+175
o
C
Document ID
Issued Date
Revised Date
Revision
Page.
DS-222713
2008/02/10
2010/03/10
B
8
Formosa
MS
BZX55C2V4 THRU BZX55C100
Zener Diode
Electrical characteristics (at T =25 C unless otherwise noted)
o
A
Part No.
Marking
code
Zener
voltage
Test
current
Zener
impedance
V Z @ I ZT (Volts)
I ZT
Z ZT @ I ZT
Z ZK @ I ZK
(Ω)Max
Leakage
current
I ZK
Min.
Nom.
Max.
mA
(Ω)Max
mA
BZX55C2V4
2.28
2.4
2.52
5.0
85
600
0.25
BZX55C2V7
BZX55C2V7
2.57
2.7
2.84
5.0
85
600
BZX55C3V0
BZX55C3V0
2.85
3.0
3.15
5.0
90
600
BZX55C3V3
BZX55C3V3
3.14
3.3
3.47
5.0
90
BZX55C3V6
BZX55C3V6
3.42
3.6
3.78
5.0
90
BZX55C3V9
BZX55C3V9
3.71
3.9
4.10
5.0
BZX55C4V3
BZX55C4V3
4.09
4.3
4.52
5.0
BZX55C2V4
IR
VR
(uA)Max
Volts
50
1.0
0.25
10
1.0
0.25
4.0
1.0
600
0.25
2.0
1.0
600
0.25
2.0
1.0
90
600
0.25
2.0
1.0
90
600
0.25
1.0
1.0
BZX55C4V7
BZX55C4V7
4.47
4.7
4.94
5.0
80
600
0.25
0.5
1.0
BZX55C5V1
BZX55C5V1
4.85
5.1
5.36
5.0
60
550
0.25
0.1
1.0
BZX55C5V6
BZX55C5V6
5.32
5.6
5.88
5.0
40
450
0.25
0.1
1.0
BZX55C6V2
BZX55C6V2
5.89
6.2
6.51
5.0
10
200
0.25
0.1
2.0
BZX55C6V8
BZX55C6V8
6.46
6.8
7.14
5.0
8
150
0.25
0.1
3.0
BZX55C7V5
BZX55C7V5
7.13
7.5
7.88
5.0
7
50
0.25
0.1
5.0
BZX55C8V2
BZX55C8V2
7.79
8.2
8.61
5.0
7
50
0.25
0.1
6.2
BZX55C9V1
BZX55C9V1
8.65
9.1
9.56
5.0
10
50
0.25
0.1
6.8
BZX55C10
BZX55C10
9.50
10
10.50
5.0
15
70
0.25
0.1
7.5
BZX55C11
BZX55C11
10.45
11
11.55
5.0
20
70
0.25
0.1
8.2
BZX55C12
BZX55C12
11.40
12
12.60
5.0
20
90
0.25
0.1
9.1
BZX55C13
BZX55C13
12.35
13
13.65
5.0
26
110
0.25
0.1
10
BZX55C15
BZX55C15
14.25
15
15.75
5.0
30
110
0.25
0.1
11
BZX55C16
BZX55C16
15.20
16
16.80
5.0
40
170
0.25
0.1
12
BZX55C18
BZX55C18
17.10
18
18.90
5.0
50
170
0.25
0.1
13
BZX55C20
BZX55C20
19.00
20
21.00
5.0
55
220
0.25
0.1
15
BZX55C22
BZX55C22
20.90
22
23.10
5.0
55
220
0.25
0.1
16
BZX55C24
BZX55C24
22.80
24
25.20
5.0
80
220
0.25
0.1
18
BZX55C27
BZX55C27
25.65
27
28.35
5.0
80
220
0.25
0.1
20
BZX55C30
BZX55C30
28.50
30
31.50
5.0
80
220
0.25
0.1
22
BZX55C33
BZX55C33
31.35
33
34.65
5.0
80
220
0.25
0.1
24
BZX55C36
BZX55C36
34.20
36
37.80
5.0
80
220
0.25
0.1
27
BZX55C39
BZX55C39
37.05
39
40.95
2.5
90
500
0.25
0.1
30
BZX55C43
BZX55C43
40.85
43
45.15
2.5
90
600
0.50
0.1
33
BZX55C47
BZX55C47
44.65
47
49.35
2.5
110
700
0.50
0.1
36
BZX55C51
BZX55C51
48.45
51
53.55
2.5
125
700
0.50
0.1
39
BZX55C56
BZX55C56
53.20
56
58.80
2.5
135
1000
0.50
0.1
43
BZX55C62
BZX55C62
58.90
62
65.10
2.5
150
1000
0.50
0.1
47
BZX55C68
BZX55C68
64.60
68
71.40
2.5
200
1000
0.50
0.1
51
BZX55C75
BZX55C75
71.25
75
78.75
2.5
250
1500
0.50
0.1
56
BZX55C82
BZX55C82
77.90
82
86.10
2.5
300
2000
0.50
0.1
62
BZX55C91
BZX55C91
86.45
91
95.55
1.0
450
5000
0.10
0.1
68
BZX55C100
BZX55C100
95.00
100
105.0
1.0
450
5000
0.10
0.1
75
Note : 5% tolerance of Zener voltage
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 3
Document ID
Issued Date
Revised Date
Revision
Page.
DS-222713
2008/02/10
2010/03/10
B
8
Rating and characteristic curves (BZX55C2V4 THRU BZX55C100)
FIG.1-TOTAL POWER DISSIPATION VS.
AMBIENT TEMPERATURE
FIG. 2-TYPICAL CHANGE OF WORKING VOLTAGE
o
UNDER OPERATING CONDITIONS AT T A =25 C
1000
500
VOLTAGE CHANGE (mV)
TOTAL POWER DISSIPATION (mW)
600
400
300
200
I Z = 5mA
100
10
100
0
0
0
40
80
120
160
200
0
5
o
15
20
25
ZENER VOLTAGE (V)
FIG. 3-TYPICAL CHANGE OF WORKING VOLTAGE
VS. JUNCTION TEMPERATURE
FIG. 4-TEMPERATURE COEFFICIENT OF VZ
VS. Z-VOLTAGE
15
-4
TEMPERATURE COEFFICIENT (10 / K)
1.3
RELATIVE VOLTAGE CHANGE
10
AMBIENT TEMPERATURE ( C)
1.2
-4
10 x 10 /K
-4
8 x 10 /K
-4
6 x 10 /K
1.1
-4
4 x 10 /K
-4
2 x 10 /K
0
-4
-2 x 10 /K
-4
-4 x 10 /K
1.0
0.9
0.8
10
I Z = 5mA
5
0
-5
-60
0
60
120
180
240
0
o
JUNCTION TEMPERATURE ( C)
10
20
30
40
50
ZENER VOLTAGE (V)
FIG. 5-DIODE CAPACITANCE VS. Z-VOLTAGE
DIODE CAPACITANCE (pF)
200
150
100
50
0
0
5
10
15
20
25
ZENER VOLTAGE (V)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 4
Document ID
Issued Date
Revised Date
Revision
Page.
DS-222713
2008/02/10
2010/03/10
B
8
Rating and characteristic curves (BZX55C2V4 THRU BZX55C100)
FIG. 7-Z-CURRENT VS. Z-VOLTAGE
100
50
10
40
ZENER CURRENT (mA)
FORWARD CURRENT (mA)
FIG. 6-FORWARD CURRENT
VS. FORWARD VOLTAGE
1
0.1
P tot = 500mW
30
20
10
0.01
0.001
0
0
0.2
0.4
0.6
0.8
1.0
15
25
30
35
ZENER VOLTAGE (V)
FIG. 8-Z-CURRENT VS. Z-VOLTAGE
FIG. 9-DIFFERENTIAL Z-RESISTANCE VS. Z-VOLTAGE
1000
DIFFERENTIAL Z-RESISTANCE (ohm)
100
80
P tot = 500mW
60
40
20
0
I Z = 1mA
100
I Z = 5mA
10
I Z = 10mA
1
0
4
8
12
16
20
0
5
ZENER VOLTAGE (V)
10
15
20
25
ZENER VOLTAGE (V)
FIG. 10-THERMAL RESPONSE
THERMAL RESISTANCE FOR PULSE Cond. (K/W)
ZENER CURRENT (mA)
20
FORWARD VOLTAGE (V)
1000
t p / T= 0.5
100
t p / T= 0.2
Single Pulse
t p / T= 0.01
10
t p / T= 0.1
t p / T= 0.02
t p / T= 0.05
1
0.1
1
10
100
1000
PULSE LENGTH (mS)
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TEL:886-2-22696661
FAX:886-2-22696141
Page 5
Document ID
Issued Date
Revised Date
Revision
Page.
DS-222713
2008/02/10
2010/03/10
B
8
Formosa
MS
BZX55C2V4 THRU BZX55C100
Zener Diode
Pinning information
Pin
Pin1
Pin2
Simplified outline
cathode
anode
Symbol
1
2
1
2
Taping & bulk specifications for AXIAL devices
52.4mm/ 26.2mm
17mm DIA.
55mm Max.
A
17mm DIA.
72mm DIA.
71mm Max.
355mm
OFF Center
both sids
1.0mm
Max OFF
Alignment
1.2mm
6.3mm
REEL PACKING
DEVICE
Q'TY 1
COMPONENT
CARTON
Q'TY 2
APPROX.
CASE
(PCS / REEL)
SPACING
SIZE
(PCS / CARTON)
CROSS
"A" in FIG. A
(m/m)
TYPE
DO-35G/52mm
5,000
5 mm
360 * 340 * 370
WEIGHT(kg)
20,000
7.3
AMMO PACKING
DEVICE
Q'TY 1
INNER
CARTON
Q'TY 2
APPROX.
CASE
(PCS / BOX)
BOX SIZE
SIZE
(PCS / CARTON)
CROSS
(m/m)
(m/m)
TYPE
WEIGHT(kg)
DO-35G/26mm
5,000
250 * 78 *48
420 * 270 * 330
150,000
16.7
DO-35G/52mm
5,000
250 *7 8 *78
420 * 270 * 330
100,000
15.0
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Page 6
Document ID
Issued Date
Revised Date
Revision
Page.
DS-222713
2008/02/10
2010/03/10
B
8
Formosa
MS
BZX55C2V4 THRU BZX55C100
Zener Diode
BULK PACKING
DEVICE
Q'TY 1
INNER
CARTON
Q'TY 2
APPROX.
CASE
(PCS / BOX)
BOX SIZE
SIZE
(PCS / CARTON)
CROSS
TYPE
(m/m)
DO-35G
2,000
WEIGHT(kg)
(m/m)
96 * 80 * 42
410 * 335 * 265
120,000
17.4
Suggested thermal profiles for soldering processes
1.Lead free temperature profile wave-soldering
280
Peak soldering temperature not
to exceed 260ºC
260
240
220
Temperature(°C)
200
180
160
140
120
Peak
Max well
time 5 Max
100
80
Cool Down
Max gradient-4ºC/s
Suggested gradient - 2ºC/s or
less
60
40
20
Preheat
Max gradient 2ºC/s
0
0
20
40
60
80
100 120 140 160 180 200 220 240
Time(Sec)
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TEL:886-2-22696661
FAX:886-2-22696141
Page 7
Document ID
Issued Date
Revised Date
Revision
Page.
DS-222713
2008/02/10
2010/03/10
B
8
Formosa
MS
BZX55C2V4 THRU BZX55C100
Zener Diode
High reliability test capabilities
Item Test
Conditions
Reference
o
1. Solder Resistance
at 260±5 C for 10±2sec.
immerse body into solder 1/16"±1/32"
MIL-STD-750D
METHOD-2031
2. Solderability
at 245±5 oC for 5 sec.
MIL-STD-202F
METHOD-208
3. Pull Test
0.25kg in axial lead direction for 10 sec.
MIL-STD-750D
METHOD-2036
4. Bend Lead
0.25kg weight applied to each lead bending
arc 90 o±5 o for 3 times.
MIL-STD-750D
METHOD-2036
5. High Temperature Reverse Bias
V R=80% rate at T J=150 oC for 168 hrs.
MIL-STD-750D
METHOD-1038
6. Pressure Cooker
15P SIG at T A=121 oC for 4 hrs.
JESD22-A102
7. Temperature Cycling
-55 oC to +125 oC dwelled for 30 min.
and transferred for 5min. total 10 cycles.
8. Thermal Shock
0 oC for 5 min. rise to 100 oC for 5 min. total 10 cycles.
9. Humidity
at T A=85 oC, RH=85% for 1000hrs.
10. High Temperature Storage Life
at 175 oC for 1000 hrs.
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FAX:886-2-22696141
MIL-STD-750D
METHOD-1051
Page 8
MIL-STD-750D
METHOD-1056
MIL-STD-750D
METHOD-1021
MIL-STD-750D
METHOD-1031
Document ID
Issued Date
Revised Date
Revision
Page.
DS-222713
2008/02/10
2010/03/10
B
8
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