CT Micro CTL0353PS-R3 P-channel enhancement mosfet Datasheet

CTL0353PS-R3
P-Channel Enhancement MOSFET
Features
Description

Drain-Source Breakdown Voltage VDSS - 30 V
The CTL0353PS-R3 is the P-Channel logic enhancement

Drain-Source On-Resistance
mode power field effect transistors are produced using
RDS(ON) 58m, at VGS= -10V, ID= -3.2A
high cell density, DMOS trench technology. This high
RDS(ON) 75m, at VGS= -4.5V, ID= -2.5A
density process is especially tailored to minimize on-state

Continuous Drain Current at T C=25℃ ID = -3.0A

Advanced high cell density Trench Technology

RoHS Compliance & Halogen Free
resistance. These devices are particularly suited for low
voltage application such as cellular phone and notebook
computer power management and other battery powered
circuits where low in-line power loss are needed in a very
small outline surface mount package.
Applications

Power Management

Lithium Ion Battery
Package Outline
Schematic
Drain
Drain
Gate
Gate
Source
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Source
Page 1
Rev 1
Nov, 2013
CTL0353PS-R3
P-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
Test Conditions
Min
Notes
VDS
Drain-Source Voltage
-20
V
VGS
Gate-Source Voltage
±20
V
ID
Continuous Drain Current
-3.0
A
1
IDM
Pulsed Drain Current
-12
A
1
PD
Total Power Dissipation
1.04
W
2
TSTG
Storage Temperature Range
-55 to 150
°C
TJ
Operating Junction Temperature Range
-55 to 150
°C
Thermal Characteristics
Symbol
RӨJA4
Parameters
Test Conditions
Min
Typ
Max
--
120
--
Thermal Resistance
Junction-Ambient (t=10s)
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Units
oC
/W
Notes
1,4
Rev 1
Nov, 2013
CTL0353PS-R3
P-Channel Enhancement MOSFET
Electrical Characteristics T
A
= 25°C (unless otherwise specified)
Static Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
BVDSS
Drain-Source Breakdown Voltage
VGS= 0V, ID= -250μA
-30
-
-
V
IDSS
Drain-Source Leakage Current
VDS = -30V, VGS = 0V
-
-
-1
µA
IGSS
Gate-Source Leakage Current
VGS = ±20V, VDS = 0V
-
-
±100
nA
Notes
On Characteristics
Symbol
Parameters
RDS(ON)
Drain-Source On-Resistance
VGS(th)
Gate-Source Threshold Voltage
Test Conditions
Min
Typ
Max
Units
Notes
VGS = -10V, ID = -3.2A
-
58
70
mΩ
VGS = -4.5V, ID = -2.5A
-
75
95
mΩ
VGS = VDS, I ID =-250μA
-1
---
-3
V
3
Units
Notes
3
Dynamic Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
CISS
Input Capacitance
VGS =0V,
-
460
-
COSS
Output Capacitance
VDS=-10V,
VDS =-15V
-
74
-
CRSS
Reverse Transfer Capacitance
f=1MHz
-
23
-
Min
Typ
Max
VDS = -15V ,
-
33
-
Switching Characteristics
f=1MHz
Symbol
Parameters
TD(ON)
Turn-On Delay Time
TR
Rise Time
VGS = -10V,
-
17
-
TD(OFF)
Turn-Off Delay Time
RG = 6Ω,
-
39
-
TF
Fall Time
RL= 15Ω,
-
5
-
QG
Total Gate Charge
VDS = -15V ,
-
6.8
-
QGS
Gate-Source Charge
VGS = -4.5V,
-
2.8
-
QGD
Gate-Drain Charge
ID = -1.7A
-
2.3
-
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pF
Test Conditions
Page 3
Units
Notes
ns
nC
Rev 1
Nov, 2013
CTL0353PS-R3
P-Channel Enhancement MOSFET
Drain-Source Diode Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
VSD
Body Diode Forward Voltage
VGS = 0V, ID = -1A
-
-0.8
-1.2
V
ISD
Body Diode Continuous Current
-
-
-1
A
Notes
1
Note:
1. The power dissipation is limited by 150℃ junction temperature.
2. Device mounted on a glass-epoxy board
FR-4
25.4 × 25.4 mm .
2 Oz Copper
Actual Size
3. The data tested by pulsed , pulse width ≦ 300μs , duty cycle ≦ 2%
4. Thermal Resistance follow JESD51-3.
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Rev 1
Nov, 2013
CTL0353PS-R3
P-Channel Enhancement MOSFET
Typical Characteristic Curves
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Nov, 2013
CTL0353PS-R3
P-Channel Enhancement MOSFET
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CTL0353PS-R3
P-Channel Enhancement MOSFET
Test Circuits & Waveforms
Figure 9: Gate Charge Test Circuit
Figure 10: Gate Charge Waveform
Figure 11: Switching Time Test Circuit
Figure 12: Switching Time Waveform
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Rev 1
Nov, 2013
CTL0353PS-R3
P-Channel Enhancement MOSFET
Package Dimension (SOT-23)
Note: Dimensions in mm
Recommended pad layout for surface mount leadform
Note: Dimensions in mm
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CTL0353PS-R3
P-Channel Enhancement MOSFET
Marking Information
0353
0353: Device Number
Ordering Information
Part Number
Description
Quantity
CTL0353PS-R3
SOT-23 Reel
3000 pcs
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CTL0353PS-R3
P-Channel Enhancement MOSFET
Reflow Profile
Profile Feature
Pb-Free Assembly Profile
Temperature Min. (Tsmin)
150°C
Temperature Max. (Tsmax)
200°C
Time (ts) from (Tsmin to Tsmax)
60-120 seconds
Ramp-up Rate (tL to tP)
3°C/second max.
Liquidous Temperature (TL)
217°C
Time (tL) Maintained Above (TL)
60 – 150 seconds
Peak Body Package Temperature
260°C +0°C / -5°C
Time (tP) within 5°C of 260°C
30 seconds
Ramp-down Rate (TP to TL)
6°C/second max
Time 25°C to Peak Temperature
8 minutes max.
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Nov, 2013
CTL0353PS-R3
P-Channel Enhancement MOSFET
DISCLAIMER
CT MICRO RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. CT MICRO DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
______________________________________________________________________________________
CT MICRO ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL OF CT MICRO INTERNATIONAL CORPORATION.
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical
support device or system whose failure to perform
implant into the body, or (b) support or sustain life,
can be reasonably expected to cause the failure of
or (c) whose failure to perform when properly used
the life support device or system, or to affect its
in accordance with instruction for use provided in
safety or effectiveness.
the labelling, can be reasonably expected to result
in significant injury to the user.
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