JMNIC BFR106 Npn 5 ghz wideband transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BFR106
NPN 5 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
DESCRIPTION
BFR106
PINNING
NPN silicon planar epitaxial transistor
in a plastic SOT23 envelope. It is
primarily intended for low noise,
general RF applications.
PIN
DESCRIPTION
1
base
2
emitter
3
collector
3
age
Code: R7p
1
2
Top view
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−
20
V
VCEO
collector-emitter voltage
open base
−
−
15
V
IC
DC collector current
−
−
100
mA
mW
Ptot
total power dissipation
up to Ts = 70 °C; note 1
−
−
500
hFE
DC current gain
IC = 50 mA; VCE = 9 V; Tamb = 25 °C
25
80
−
fT
transition frequency
IC = 50 mA; VCE = 9 V; f = 500 MHz;
Tamb = 25 °C
−
5
−
GHz
GUM
maximum unilateral power gain
IC = 30 mA; VCE = 6 V; f = 800 MHz;
Tamb = 25 °C
−
11.5
−
dB
Vo
output voltage
IC = 50 mA; VCE = 9 V; RL = 75 Ω;
Tamb = 25 °C; dim = −60 dB;
f(p+q−r) = 793.25 MHz
−
350
−
mV
MAX.
UNIT
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
15
V
VEBO
emitter-base voltage
open collector
−
3
V
IC
DC collector current
−
100
mA
Ptot
total power dissipation
−
500
mW
Tstg
storage temperature
−65
150
°C
Tj
junction temperature
−
175
°C
up to Ts = 70 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
September 1995
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR106
THERMAL RESISTANCE
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to
soldering point
THERMAL RESISTANCE
up to Ts = 70 °C; note 1
210 K/W
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
−
−
100
UNIT
ICBO
collector cut-off current
hFE
DC current gain
IC = 50 mA; VCE = 9 V
25
80
−
fT
transition frequency
IC = 50 mA; VCE = 9 V; f = 500 MHz;
Tamb = 25 °C
−
5
−
GHz
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
1.5
−
pF
IE = 0; VCB = 10 V
nA
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
4.5
−
pF
Cre
feedback capacitance
IC = 0; VCE = 10 V; f = 1 MHz
−
1.2
−
pF
GUM
maximum unilateral power gain
(note 1)
IC = 30 mA; VCE = 6 V; f = 800 MHz;
Tamb = 25 °C
−
11.5
−
dB
F
noise figure
IC = 30 mA; VCE = 6 V; f = 800 MHz;
Tamb = 25 °C
−
3.5
−
dB
d2
second order intermodulation
distortion
note 2
−
−50
−
dB
Vo
output voltage
note 3
−
350
−
mV
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
G UM
S 21
- dB.
= 10 log ------------------------------------------------------------2 
2
 1 – S 11   1 – S 22 
2. IC = 30 mA; VCE = 6 V; RL = 75 Ω; Tamb = 25 °C;
f(p+q) = 810 MHz; Vo = 100 mV.
3. dim = −60 dB (DIN 45004B); IC = 50 mA; VCE = 9 V; RL = 75 Ω; Tamb = 25 °C; f(p+q−r) = 793.25 MHz.
September 1995
3
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR106
MBB774
MEA398 - 1
600
1/2 page (Datasheet)
120
handbook, halfpage
22 mm
P tot
h FE
(mW)
400
80
200
40
0
0
0
50
150
100
Ts
0
200
( o C)
40
80
120
I C (mA)
VCE = 9 V; Tamb = 25 °C.
Fig.2 Power derating curve.
Fig.3
DC current gain as a function of collector
current.
MBB773
8
MEA399
40
handbook, halfpage
handbook, halfpage
fT
(GHz)
G UM
(dB)
6
30
4
20
2
10
0
0
40
80
I C (mA)
0
120
10
VCE = 9 V; f = 500 MHz; Tj = 25 °C.
Fig.4
2
103
f (MHz)
10
IC = 30 mA; VCE = 6 V; Tamb = 25 °C.
Fig.5
Transition frequency as a function of
collector current.
September 1995
10
4
Maximum unilateral power gain as a
function of frequency.
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR106
1
handbook, full pagewidth
0.5
2
0.2
2000 MHz
1200
1000
+j
0.2
0
–j
5
1500
10
800
0.5
500
1
2
5
10
∞
200
10
100
0.2
5
40 MHz
2
0.5
MEA400
1
IC = 30 mA; VCE = 6 V; Tamb = 25 °C.
Zo = 50 Ω.
Fig.6 Common emitter input reflection coefficient (S11).
90°
handbook, full pagewidth
120°
150°
60°
30°
40 MHz
100
200
180°
50
40
30
20
10
500
800
1000
1200
1500
+ϕ
0°
2000 MHz
−ϕ
30°
150°
60°
120°
IC = 30 mA; VCE = 6 V; Tamb = 25 °C.
90°
MEA403
Fig.7 Common emitter forward transmission coefficient (S21).
September 1995
5
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR106
90°
handbook, full pagewidth
120°
60°
2000 MHz
150°
30°
1500
1200
1000
800
0.5
180°
0.4
0.3
0.2
0.1
+ϕ
500
200
100
40 MHz
0°
−ϕ
30°
150°
60°
120°
MEA402
90°
IC = 30 mA; VCE = 6 V; Tamb = 25 °C.
Fig.8 Common emitter reverse transmission coefficient (S12).
1
handbook, full pagewidth
0.5
2
0.2
5
+j
0
0.2
–j
10
800 MHz
0.5
1
2
5
10
∞
500
10
200
5
0.2
100
2
0.5
IC = 30 mA; VCE = 6 V; Tamb = 25 °C.
Zo = 50 Ω.
40 MHz
1
MEA401
Fig.9 Common emitter output reflection coefficient (S22).
September 1995
6
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR106
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT23
September 1995
EUROPEAN
PROJECTION
7
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR106
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1995
8
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