BCD APT13003EZTR-E1 High voltage fast switching npn power transistor Datasheet

Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
General Description
Features
The APT13003E series are high voltage, high speed
switching NPN Power transistors specially designed
for off-line switch mode power supplies with low output power.
·
·
·
·
The APT13003E series are available in TO-92 and TO126 packages.
High Switching Speed
High Collector-Emitter Voltage
Low Cost
Bulk and Ammo Packing TO-92 Package and
TO-126 Package
Applications
·
·
TO-92
(Bulk Packing)
APT13003E
Battery Chargers for Mobile Phone of BCD
Solution
Power Supply for DVD/STB of BCD Solution
TO-92
(Ammo Packing)
TO-126
Figure 1. Package Types of APT13003E
Pin Configuration
Z Package
U Package
TO-92
TO-126
3
Base
2
Collector
1
Emitter
(Top View)
3
Emitter
2
Collector
1
Base
(Front View)
Figure 2. Pin Configurations of APT13003E
May 2008 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
1
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13003E
Ordering Information
APT13003
E1: Lead Free
TR: Ammo
Blank: Bulk
Circuit Type
Package
Z: TO-92
U: TO-126
E: APT13003E
Package
TO-92
TO-126
Part Number
Marking ID
Packing Type
APT13003EZ-E1
13003EZ-E1
Bulk
APT13003EZTR-E1
13003EZ-E1
Ammo
APT13003EU-E1
EU13003E
Bulk
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage (VBE=0)
VCES
700
V
Collector-Emitter Voltage (IB=0)
VCEO
465
V
Emitter-Base Voltage (IC=0)
VEBO
9
V
IC
1.5
A
ICM
3
A
IB
0.75
A
IBM
1.5
A
Collector Current
Collector Peak Current (Pulse) (Note 2)
Base Current
Base Peak Current (Pulse) (Note 2)
Power Dissipation, TA=25oC
For TO-92
PTOT
1.1
W
Power Dissipation, TC=25oC
For TO-126
PTOT
20
W
TJ
150
o
TSTG
-65 to 150
o
Operating Junction Temperature
Storage Temperature Range
C
C
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Note 2: Pulse test for Pulse Width < 5ms, Duty Cycle ≤ 10%.
May 2008 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
2
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13003E
Thermal Characteristics
Parameter
Symbol
For TO-92
Thermal Resistance (Junction-to-Case)
Value
Unit
83.3
RθJC
For TO-126
oC/W
6.25
For TO-92
113.6
RθJA
Thermal Resistance (Junction-to-Ambient)
For TO-126
oC/W
96
Electrical Characteristics
( TC=25oC, unless otherwise specified.)
Parameter
Collector Cut-off Current
(VBE=-1.5V)
Symbol
Conditions
ICEV
VCE=700V
Collector-Emitter Sustaining
Voltage (IB=0)
VCEO (sus)
IC=100μA
Collector-Emitter Saturation
Voltage (Note 3)
VCE (sat)
Base-Emitter Saturation Voltage
(Note 3)
VBE (sat)
DC Current Gain (Note 3)
Output Capacitance
hFE
Cob
Current Gain Bandwidth Product
fT
Turn-on Time with Resistive Load
ton
Storage Time with Resistive Load
ts
Fall Time with Resistive Load
tf
Min
Typ
Max
Unit
10
μA
465
V
IC=0.5A, IB=0.1A
0.17
0.3
IC=1.0A, IB=0.25A
0.29
0.4
IC=0.5A, IB=0.1A
1.0
IC=1.0A, IB=0.25A
1.2
IC=0.3A, VCE=2V
15
IC=0.5A, VCE=2V
13
IC=1.0A, VCE=2V
5
VCB=10V, f=0.1MHZ
VCE=10V, IC=0.1A
17
V
30
25
16
pF
4
IC=1A, VCC=125V, IB1=0.2A,
IB2=-0.2A, TP=25μS
V
MHz
0.3
1
1.8
3
0.28
0.4
μs
Note 3: Pulse test for Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
May 2008 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
3
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13003E
Typical Performance Characteristics
10
Collector Current IC (A)
Collector Current IC (A)
10
1
0.1
DC
0.01
1
DC
0.1
0.01
1E-3
1
10
100
1
1000
10
100
1000
Collector-Emitter Clamp Voltage VCE (V)
Collector-Emitter Clamp Voltage VCE (V)
Figure 3. Safe Operating Areas (TO-92 Package)
Figure 4. Safe Operating Areas (TO-126 Package)
2.00
125
1.75
IB=400mA
1.50
IB=300mA
1.25
IB=250mA
IB=200mA
1.00
IB=150mA
0.75
IB=100mA
0.50
IB=50mA
Collector Current IC (A)
Power Derating Factor (%)
100
75
50
25
0.25
0.00
0
0
25
50
75
100
125
150
175
0
200
o
1
2
3
4
5
Collector-Emitter Voltage VCE (V)
Case Temperature TC ( C)
Figure 5. Power Derating Curve
Figure 6. Static Characteristics
May 2008 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
4
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13003E
Typical Performance Characteristics (Continued)
40
35
Collector-Emitter Voltage VCE (V)
10
VCE=5V
VCE=1V
o
TA=125 C
DC Current Gain
30
25
o
TA=25 C
20
15
10
1
o
o
TJ=125 C
TJ=25 C
0.1
hFE=5
5
0.01
0.1
0
0.01
0.1
1
1
Collector Current IC (A)
Collector Current IC (A)
Figure 8. Collector-Emitter Saturation Voltage
Figure 7. DC Current Gain
1.1
20
1.0
18
0.9
16
o
TJ=25 C
hFE
Base-Emitter Voltage VBE (V)
VCE=2V, IC=0.5A
0.8
14
o
TJ=125 C
0.7
12
0.6
hFE=5
0.5
0.1
10
25
1
Collector Current IC (A)
50
75
100
125
150
o
Case Temperature ( C)
Figure 10. hFE vs. Case Temperature
Figure 9. Base-Emitter Saturation Voltage
May 2008 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
5
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13003E
Mechanical Dimensions
TO-92 (Bulk Packing)
Unit: mm(inch)
1.100(0.043)
3.430(0.135)
MIN
3.700(0.146)
3.300(0.130)
1.400(0.055)
0.360(0.014)
0.510(0.020)
0.000(0.000)
0.380(0.015)
Φ1.600(0.063)
MAX
4.700(0.185)
0.380(0.015)
0.550(0.022)
14.100(0.555)
14.500(0.571)
4.300(0.169)
4.400(0.173)
4.700(0.185)
1.270(0.050)
TYP
2.440(0.096)
2.640(0.104)
May 2008 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
6
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13003E
Mechanical Dimensions (Continued)
TO-92 (Ammo Packing)
Unit: mm(inch)
1.100(0.043)
1.270(0.050)
Typ
4.500(0.177)
5.500(0.217)
0.360(0.014)
3.700(0.146)
0.000(0.000)
0.380(0.015)
Φ 1.600(0.063)
MAX
14.000(0.551)
0.510(0.020)
13.000(0.512)
3.300(0.130)
1.400(0.055)
3.430(0.135)
MIN
4.700(0.185)
4.300(0.169)
4.400(0.173)
4.700(0.185)
0.380(0.015)
0.550(0.022)
2.540(0.100)
Typ
May 2008 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
7
Data Sheet
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
APT13003E
Mechanical Dimensions (Continued)
2.500(0.098
2.900(0.114)
1.100(0.043)
1.500(0.059)
3.900(0.154)
4.100(0.161)
7.400(0.291)
7.800(0.307)
10.600(0.417)
11.000(0.433)
Unit: mm(inch)
0.000(0.000)
0.300(0.012)
TO-126
3.000(0.118)
3.200(0.126)
1.170(0.046)
1.370(0.054)
2.300(0.091)
2.100(0.083)
15.300(0.602)
15.700(0.618)
0.660(0.026)
0.860(0.034)
2.290(0.090)TYP
0.450(0.018)
0.600(0.024)
4.480(0.176)
4.680(0.184)
May 2008 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
8
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