BAW75 and BAW76 Small-Signal Diode Fast Switching Diodes Features Silicon Epitaxial Planar Diode Fast switching diodes. Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.13g Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted.) Parameter Symbol Limit Unit Reverse voltage BAW75 BAW76 VR 25 50 Volts Peak reverse voltage BAW75 BAW76 VRM 35 75 Volts Rectified current (Average) half wave rectification with resist. load at Tamb=25oC and f>50Hz Surge forward current at t<1us and Tj=25oC IFSM Power dissipation at Tamb=25oC Ptot Thermal resistance junction to ambient air Junction temperature Storage temperature range Notes: 150 IO (1) 2.0 RθJA Tj TS Amps 500 (1) 0.35 (1) mW o C/W 175 o C -65 to +175 o C 1. Valid provided that leads are kept at ambient temperature at a distance of 8mm from case 635 mA Electrical Characteristics (TJ=25oC unless otherwise noted.) Parameter Symbol Test Condition Forward voltage BAW75 BAW76 VF at IF=30mA at IF=100mA Leakage current BAW75 BAW75 BAW76 BAW76 IR Reverse breakdown voltage BAW75 BAW76 V(BR)R Capacitance BAW75 BAW76 Reverse recovery time Typ. Max. Unit - - 1.0 1.0 Volt VR=25V VR=25V, Tj=150OC VR=50V VR=50V, Tj=150OC - - 100 100 100 100 nA uA nA uA tested with 5uA pulses 35 75 - - Volts Ctot VF=VR=0V - - 4.0 2.0 pF IF=10mA, IR=10mA Irr=1mA IF=10mA, IR=1mA VR=6V, RL=100Ω - - 4 trr - - 2 636 Min. ns RATINGS AND CHARACTERISTIC CURVES (TA = 25oC unless otherwise noted.) 637 RATINGS AND CHARACTERISTIC CURVES (TA = 25oC unless otherwise noted.) 638