Jinan Jingheng ES1A Super mount devices rectifier Datasheet

ES1A THRU ES1J
P
GP
R
SURFACE MOUNT DEVICES RECTIFIERS
SUPER FAST RECOVERY RECTIFIERS
FEATURES
ss
SILICON
RECTIFIER
Reverse Voltage: 50 to 600 Volts
Forward Current:1.0Ampere
S E M I C O N D U C T O R
SMA(DO-214AC)
Glass passivated cavity-free junction
Ideal for surface mount automotive applications
Ultrafast recovery time for high efficiency
Built-in strain relief
Easy pick and place
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
High temperature soldering guaranteed:260 C/10 seconds at terminals
0.110(2.79)
0.100(2.54)
0.065(1.65)
0.049(1.25)
0.181(4.60
0.157(3.99)
0.012(0.305)
0.006(0.152)
0.090(2.29)
0.078(1.98)
MECHANICAL DATA
0.008(0.203)
MAX
0.060(1.52)
0.030(0.76)
Case: JEDEC SMA(DO-214AC) molded plastic body
TerMINals: Solder Plated, solderable per MIL-STD-750,method 2026
Polarity: Color band denotes cathode end
Weight: 0.002ounce, 0.064 gram
0.208(5.28)
0.189(4.80)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating at 25 C ambient temperature unless otherwise specified ,Single phase ,half wave ,60HZ,resistive or inductive load.
For capacitive load,derate current by 20%.)
Symbols
A
B
C
ES1
D
E
G
J
Units
Maximum Repetitive Peak Reverse Voltage
VRRM
50
100
150
200
300
400
600
Volts
Maximum RMS Voltage
VRMS
35
70
105
140
210
280
420
Volts
Maximum DC Blocking Voltage
VDC
50
100
150
200
300
400
600
Volts
Maximum Average Forward Rectified Current
at Ta=120C
I(AV)
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rated load (JEDEC
method)
IFSM
Maximum Instantaneous Forward Voltage
at 1.0 A
Maximum DC Reverse
Current At Rated DC
Blocking Voltage
TA=25 C
VF
1.0
Amps
30
Amps
0.95
IR
1.25
5
1.7
Volts
A
Maximum Reverse Recovery Time(Note1)
Trr
35
Typical Junction Capacitance(Note2)
CJ
10
PF
Typical Thermal Resistance(Note3)
RθJA
34
C/W
TJ,TSTG
-55 to+150
C
Operating Junction and Storage Temperature Range
ns
Note: 1.Test conditions: IF=0.5A,IR=1.0A,IRR=0.25A.
2.Measured at 1MHZ and applied reverse voltage of 4.0 Volts.
3.Thermal resistance from junction to ambient P.C.B.mounted on 0.2x0.2"(5.0x5.0mm)copper pad areas.
9-6
JINAN JINGHENG CO., LTD.
NO.51 HEPING ROAD JINAN P.R. CHINA TEL:86-531-86943657 FAX:86-531-86947096
WWW.JIFUSEMICON.COM
FIG.2-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT(A)
AVERAGE FORWARD RECTIFIED CURRENT(A)
FIG.1- FORWARD CURRENT DERATING CURVE
1.0
Resistive or Inductive Load
0.5
0
0
50
70
90
110
130
150
170
35
30
20
15
10
5
0
1
5
InsTANTANEOUS REVERSE LEAKAGE CURRENT (mA)
ES
1D
1G
ES
1E
ES
ES
1A
-
1J
ES
0.10
0.01
0.2
0.6
1.0
1.4
1.8
50
100
FIG.4-TYPICAL REVERSE CHARACTERISTICS
Pulse Width=300 s
1% Duty Cycle
1.00
10
NUMBER OF CYCLES AT 60Hz
FIG.3-TYPICAL InsTANTANEOUS FORWARD
CHARACTERISTICS
InsTANTANEOUS FORWARD CURRENT( AMPERES)
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
25
LEAD TEMPERATURE (C)
10.00
SILICON
RECTIFIER
RATINGS AND CHARACTERISTIC CURVES ES1A THRU ES1J
2.2
100
10
TJ=125 C
TJ=100 C
1
0.1
0
20
40
60
80
100
110
PERCENT OF RATED PEAK REVERSE VOLTAGE(%)
InsTANTANEOUS FORWARD VOLTAGE (VOLTS)
FIG.5-TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE (pF)
200
100
60
40
TJ=25 C
20
10
6
4
2
1
0.10.2 0.4
1.0
2
4
10
20
40
100
REVERSE VOLTAGE (V)
9-7
JINAN JINGHENG CO., LTD.
NO.51 HEPING ROAD JINAN P.R. CHINA TEL:86-531-86943657 FAX:86-531-86947096
WWW.JIFUSEMICON.COM
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