MITSUBISHI IGBT MODULES CM900DU-24NF HIGH POWER SWITCHING USE CM900DU-24NF ● IC ................................................................... 900A ● VCES ......................................................... 1200V ● Insulated Type ● 2-elements in a pack APPLICATION UPS & General purpose inverters, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm A,B HOUSING Type (J. S. T. Mfg. Co. Ltd) A : VHR-2N B : VHR-5N 150 137.5±0.25 42 14 14 Tc measured point (The side of Cu 12 2 base plate) 34.6 +1.0 –0.5 4 E1 PPS 10.5 E2 E2 1.9 ±0.2 14 14 14 14 14 14 42 42 L A B E L 34.6 +1.0 –0.5 E2 G2 9-M6 NUTS 12 C2 C2E1 E2 C1 C1 G1 E1 18 15.7 5.5 C1 25.1 8-f6.5 MOUNTING HOLES G1 G2 B 129.5 166 C1 C2E1 C2 A 21 11 19 38±0.25 42.5±0.25 38±0.25 74±0.25 74±0.25 15.7 Tc measured point (The side of Cu base plate) CIRCUIT DIAGRAM Mar. 2003 MITSUBISHI IGBT MODULES CM900DU-24NF HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage — Torque strength — Weight Conditions G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Ratings 1200 ±20 900 1800 900 1800 2550 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 1400 (Note 2) (Note 2) Main terminal to base plate, AC 1 min. Main Terminal M6 Mounting holes M6 Typical value Unit V V A A W °C °C V N•m N•m g ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol Parameter Test conditions ICES Collector cutoff current VGE(th) Gate-emitter threshold voltage IC = 90mA, VCE = 10V IGES Gate leakage current VCE(sat) Collector-emitter saturation voltage R(lead) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q Rth(j-c’)R RG Module lead resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance External gate resistance VCE = VCES, VGE = 0V VGE = VCES, VCE = 0V Tj = 25°C IC = 900A, VGE = 15V Tj = 125°C Ic = 900A, terminal-chip VCE = 10V VGE = 0V VCC = 600V, IC = 900A, VGE = 15V VCC = 600V, IC = 900A VGE1 = VGE2 = 15V RG = 0.35Ω, Inductive load switching operation IE = 900A IE = 900A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound applied*2 (1/2 module) Tc measured point is just under the chips (IGBT part) Tc measured point is just under the chips (FWDi part) Min. — Limits Typ. — Max. 1 6 7 8 V — — — — — — — — — — — — — — — — — — — — 0.35 — 1.8 2.0 0.143 — — — 4800 — — — — — 50 — — — 0.016 — — — 0.5 2.5 — — 140 16 3 — 600 200 800 300 500 — 3.4 0.049 0.078 — 0.021*3 0.034*3 2.2 µA Unit mA V mΩ nF nC ns ns µC V °C/W Ω Note 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Mar. 2003 MITSUBISHI IGBT MODULES CM900DU-24NF HIGH POWER SWITCHING USE PERFORMANCE CURVES TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGE = 20V 1400 1000 11V 800 600 10V 400 8V 200 0 2 4 6 9V 8 1400 1200 1000 800 600 400 0 10 Tj = 25°C Tj = 125°C 200 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 10 VGE = 15V COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 12V 1200 0 4 3 2 1 Tj = 25°C Tj = 125°C 0 0 104 EMITTER CURRENT IE (A) VCE = 10V 1600 15V 13V COLLECTOR CURRENT (A) 1600 1800 Tj = 25°C 200 400 600 800 1000 1200 1400 1600 1800 8 6 IC = 900A 4 IC = 1800A 2 IC = 360A 0 6 8 10 12 14 16 18 GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 20 103 7 5 3 2 103 7 5 3 2 102 Tj = 25°C COLLECTOR CURRENT IC (A) CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR CURRENT IC (A) 1800 Tj = 25°C Tj = 125°C 0 1 2 3 4 EMITTER-COLLECTOR VOLTAGE VEC (V) 7 5 3 2 102 Cies 7 5 3 2 101 7 5 3 2 100 Coes Cres 7 5 3 2 VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Mar. 2003 MITSUBISHI IGBT MODULES CM900DU-24NF HIGH POWER SWITCHING USE 103 td(off) SWITCHING TIMES (ns) 7 5 tf td(on) 3 2 102 7 Conditions: 5 VCC = 600V 3 VGE = ±15V tr RG = 0.35Ω 2 Tj = 125°C Inductive load 101 1 10 2 3 5 7 102 2 3 5 7 103 REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 7 5 Irr 3 2 trr 102 7 5 Conditions: VCC = 600V VGE = ±15V RG = 1Ω Tj = 25°C Inductive load 3 2 101 1 10 COLLECTOR CURRENT IC (A) 2 3 3 2 10–1 7 5 3 2 7 5 3 2 10–2 10–2 7 5 3 2 7 5 3 2 Single Pulse TC = 25°C 20 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 10–3 8 4 0 1000 2000 3000 4000 5000 6000 7000 IC-ESW (TYPICAL) RG-ESW (TYPICAL) 103 7 5 3 2 ESW (mJ/pulse) ESW (mJ/pulse) VCC = 600V 12 GATE CHARGE QG (nC) Esw(on) 2 3 VCC = 400V 16 TMIE (s) Conditions: VCC = 600V VGE = ±15V Tj = 125°C 102 RG = 0.35Ω 7 Inductive load 5 3 Esw(off) 2 100 1 10 IC = 900A 0 103 7 5 3 2 101 7 5 3 2 5 7 103 3 GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (°C/W) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j–c) = 0.049°C/ W 3 FWDi part: 2 Per unit base = Rth(j–c) = 0.078°C/ W 100 10–1 2 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 7 5 3 2 5 7 102 5 7 102 IC (A) 2 3 5 7 103 Esw(off) 102 7 5 3 2 Esw(on) Conditions: VCC = 600V VGE = ±15V Tj = 125°C IC = 900A Inductive load 101 7 5 3 2 100 0 0.5 1 1.5 2 2.5 RG (Ω) Mar. 2003 MITSUBISHI IGBT MODULES CM900DU-24NF HIGH POWER SWITCHING USE RG-Err (TYPICAL) IC-Err (TYPICAL) 102 7 5 103 7 5 3 2 2 Err (mJ/pulse) Err (mJ/pulse) 3 Err 101 7 5 3 2 Conditions: VCC = 600V VGE = ±15V Tj = 125°C RG = 0.35Ω Inductive load 100 1 10 2 3 5 7 102 IE (A) 2 3 5 7 103 102 7 5 3 2 Err Conditions: VCC = 600V VGE = ±15V Tj = 125°C IC = 900A Inductive load 101 7 5 3 2 100 0 0.5 1 1.5 2 2.5 RG (Ω) Mar. 2003