DMP31D0UFB4 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -30V Features and Benefits Max ID Max RDS(ON) @ TA = +25C 1 @ VGS = -4.5V -0.76A 1.5 @ VGS = -2.5V -0.62A 2 @ VGS = -1.8V -0.54A Footprint of just 0.6mm2 – Thirteen Times Smaller than SOT23 0.4mm Profile – Ideal for Low Profile Applications Low Gate Threshold Voltage Fast Switching Speed ESD Protected Gate 2KV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Load Switch in portable electronics Case: X2-DFN1006-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper Leadframe; Solderable per MIL-STD-202, Method 208 e4 Terminal Connections: See Diagram Weight: 0.001 grams (Approximate) X2-DFN1006-3 D S D G G Top View Internal Schematic Bottom View Gate Protection Diode S Equivalent Circuit Ordering Information (Note 4) Part Number DMP31D0UFB4-7B Notes: Marking P6 Reel Size (inches) 7 Tape Width (mm) 8 Quantity per Reel 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information DMP31D0UFB4-7B P6 P6 = Product Type Marking Code Top View Bar Denotes Gate And Source Side DMP31D0UFB4 Datasheet number: DS35587 Rev. 2 - 2 1 of 7 www.diodes.com March 2016 © Diodes Incorporated DMP31D0UFB4 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Steady State Continuous Drain Current TA = +25°C (Note 6) TA = +85°C (Note 6) TA = +25°C (Note 5) Pulsed Drain Current (Note 7) Symbol VDSS VGSS Value -30 ±8 Unit V V ID -0.76 -0.55 -0.54 A IDM 2 A Value 0.46 0.92 271 136 -55 to +150 Unit Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol (Note 5) Power Dissipation (Note 6) (Note 5) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Notes: PD RθJA TJ, TSTG W °C/W °C 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 7. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%. P(PK), PEAK TRANSIENT POIWER (W) 10 9 Single Pulse R JA = 262C/W R JA(t) = r(t) * R JA TJ - TA = P * R JA(t) 8 7 6 5 4 3 2 1 0 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) Fig. 1 Single Pulse Maximum Power Dissipation r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 RJA(t) = r(t) * RJA °C/W RJA = 262癈 /W Duty Cycle, D = t1/ t2 D = 0.005 Single Pulse 0.001 0.000001 0.00001 DMP31D0UFB4 Datasheet number: DS35587 Rev. 2 - 2 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Fig. 2 Transient Thermal Resistance 2 of 7 www.diodes.com 10 100 1,000 March 2016 © Diodes Incorporated DMP31D0UFB4 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 - - -1 ±3 V A A VGS = 0V, ID = -250μA VDS = -30V, VGS = 0V VGS = ±8V, VDS = 0V VGS(TH) -0.5 RDS(ON) - |Yfs| VSD 50 - -1.1 1 1.5 2 -1.2 V Static Drain-Source On-Resistance -0.6 0.45 0.54 0.64 - mS V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -400mA VGS = -2.5V, ID = -200mA VGS = -1.8V, ID = -100mA VDS = -3V, ID = -300mA VGS = 0V, IS = -300mA Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF - 76 9 6.43 167 0.9 1.5 0.1 0.2 4.98 5.85 35.7 16.6 150 20 15 - pF pF pF nC nC nC nC ns ns ns ns Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: - Test Condition VDS = -15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = -4.5V, VDS = -15V,ID = -1A VGS = -8V, VDS = -15V, ID = -1A VDD = -10V, RL = 10 VGS = -4.5V, Rg = 6 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. Typical Electrical Characteristics 1.0 1.0 VGS = 4.5V VGS = 1.8V 0.6 VDS = -5.0V 0.8 VGS = 2.5V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 0.8 VGS = 1.5V 0.4 VGS = 1.2V 0.6 0.4 TA = 150C 0.2 0.2 TA = 125C TA = 85C TA = 25 C TA = -55C 0 0 0 1 2 3 4 -VDS, DRAIN -SOURCE VOLTAGE (V) Fig. 3 Typical Output Characteristics DMP31D0UFB4 Datasheet number: DS35587 Rev. 2 - 2 5 3 of 7 www.diodes.com 0 0.5 1.0 1.5 -V GS, GATE-SOURCE VOLTAGE (V) Fig. 4 Typical Transfer Characteristics 2.0 March 2016 © Diodes Incorporated RDS(ON),DRAIN-SOURCE ON-RESISTANCE () 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 RRDS(ON) DS(on), DRAIN-SOURCE ON-RESISTANCE () 0.2 0.4 0.6 0.8 -ID, DRAIN SOURCE CURRENT (A) Fig. 5 Typical On-Resistance vs. Drain Current and Gate Voltage 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 2 4 6 -VGS, GATE SOURCE VOLTAGE(V) Fig. 6 Typical On-Resistance vs. Drain Current and Gate Voltage 8 1.7 1.6 1.4 VGS = -4.5V 1.2 1.0 TA = 150 C 0.8 TA = 125 C 0.6 TA = 85C TA = 25C 0.4 TA = -55C 0.2 0 1.6 1.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE() 0 0 0.2 0.4 0.6 0.8 -ID, DRAIN SOURCE CURRENT (A) Fig. 7 Typical On-Resistance vs. Drain Current and Temperature 1.5 1.3 1.1 0.9 0.7 0.5 -50 1.0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Fig. 8 On-Resistance Variation with Temperature 1.4 1.6 - VGS(TH), GATE THRESHOLD VOLTAGE(V) RDS(ON),DRAIN-SOURCE ON-RESISTANCE () DMP31D0UFB4 1.4 1.2 1.0 VGS = -2.5V ID = -250mA 0.8 0.6 0.4 VGS = -4.5V ID = -500mA 0.2 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 9 On-Resistance Variation with Temperature DMP31D0UFB4 Datasheet number: DS35587 Rev. 2 - 2 1.2 1.0 0.8 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (癈 °C) Fig. 10 Gate Threshold Variation vs. Ambient Temperature 4 of 7 www.diodes.com March 2016 © Diodes Incorporated DMP31D0UFB4 120 1.0 CT, JUNCTION CAPACITANCE (pF) -IS, SOURCE CURRENT (A) f = 1MHz 0.8 0.6 0.4 0.2 100 80 Ciss 60 40 20 Coss 0 0 0.4 0.6 0.8 1.0 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 11 Diode Forward Voltage vs. Current 100,000 Crss 0 5 10 15 20 25 -V DS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 Typical Junction Capacitance 30 8 -VGS, GATE-SOURCE VOLTAGE (V) -IDSS, LEAKAGE CURRENT (nA) TA = 150癈 °C 10,000 °C TA = 125癈 1,000 TA = 85癈 °C 100 10 TA = 25癈 °C 1 0.1 0 5 10 15 20 25 30 -V DS, DRAIN-SOURCE VOLTAGE (V) Fig. 13 Typical Drain-Source Leakage Current vs. Voltage DMP31D0UFB4 Datasheet number: DS35587 Rev. 2 - 2 5 of 7 www.diodes.com 6 4 2 0 0 0.4 0.8 1.2 1.6 Qg, TOTAL GATE CHARGE (nC) Fig. 14 Gate-Charge Characteristics 2.0 March 2016 © Diodes Incorporated DMP31D0UFB4 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. X2-DFN1006-3 A A1 X2-DFN1006-3 Dim Min Max Typ A 0.40 A1 0.00 0.05 0.03 b 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.05 1.00 E 0.55 0.65 0.60 e 0.35 L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 z 0.02 0.08 0.05 All Dimensions in mm Seating Plane D b Pin #1 ID e E b2 z L3 L2 L1 Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. X2-DFN1006-3 C Y Y1 G2 X G1 X1 DMP31D0UFB4 Datasheet number: DS35587 Rev. 2 - 2 Dimensions C G1 G2 X X1 Y Y1 6 of 7 www.diodes.com Value (in mm) 0.70 0.30 0.20 0.40 1.10 0.25 0.70 March 2016 © Diodes Incorporated DMP31D0UFB4 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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