, One. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. UHF power transistor BLV97CE FEATURES DESCRIPTION • Internal input matching to achieve high power gain NPN silicon planar epitaxial transistor in a SOT171 envelope, intended for common emitter, class-AB operation in radio transmitters for the 960 MHz communications band. The transistor has a 6-lead flange envelope, with a ceramic cap. All leads are isolated from the flange. • Ballasting resistors for an optimum temperature profile « Gold metallization ensures excellent reliability QUICK REFERENCE DATA RF performance up to Th = 25 °C in a common emitter class-AB circuit MODE OF OPERATION f(MHz) c.w. class-AB P L (W) VCE(V) 960 24 35 GP (dB) > 7 lie (%) > 50 PINNING-SOT171A PIN SYMBOL 1 2 3 4 5 6 e e b c e e DESCRIPTION 2 4 6 emitter o emitter base collector n^in ouu 1 3 5 O Top view emitter emitter Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safely precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors UHF power transistor BLV97CE LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL CONDITIONS PARAMETER MIN. MAX. UNIT VCBO collector base voltage open emitter - VCEO collector emitter voltage open base - VEBO emitter base voltage open collector - 3.5 V Ic collector current DC or average - 3 A I CM collector current - 9 A Plot total power dissipation peak value f>1 MHz f>1 MHz - 70 i 50 27 V V W Tmb = 25 J C Tstg storage temperature T, operating junction temperature -65 150 C - 200 "C THERMAL RESISTANCE PARAMETER SYMBOL CONDITIONS Rthj-mb from junction to mounting base (RF) Rth mb-h from mounting base to heatsink TYP. MAX. - 2.3 K/W 0.4 K/W UNIT 10 r -h4(A) = 70°C\mb = 25 "C 10- 10 Fig.2 DC SOAR. 102 Fig.3 Power/ternperature derating; I: DC or RF operation; II: short-term operation during mismatch. UHF power transistor BLV97CE CHARACTERISTICS at TJ = 25 °C unless otherwise specified. PARAMETER SYMBOL CONDITIONS V(BR)CBO collector-base breakdown voltage V(BR)CEO collector-emitter breakdown voltage V(BR)EBO emitter-base breakdown voltage ICES collector leakage current HFE DC current gain Cc collector capacitance at f = 1 MHz Cre feedback capacitance atf = 1 MHz Cof collector-flange capacitance open emitter lc = 50 mA open base l c = 100mA open collector IE = 10mA VBE = 0 VCE = 27 V lc = 2 A VCE = 20 V lE = l e = 0 VCB = 25 V lc = 0 VCE = 25 V MIN. TYP. MAX. UNIT 50 - - V 27 - - V 3.5 - - V - - 10 mA 15 - - - 44 - PF - 30 - PF - 2 - PF MDA443 100 . hFE ^^-* VCE = 25 V *^ 80 ^ 20V > "V ^ ^ 60 40 20 0 C) 2 4 6 8 10 lcC\ Fig.4 DC current gain as a function of collector current; typical values. Fig.5 20 VCB (V) 30 Output capacitance as a function of collector-base voltage; typical values. UHF power transistor BLV97CE PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads SOT171A D -- D1 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) »1 OUTLINE VERSION ISSUE DATE SOT171A 97-06-28