CT Micro CT2300-R3 N-channel enhancement mosfet Datasheet

CT2300-R3
N-Channel Enhancement MOSFET
Features
Description
The CT2300-R3 uses high performance Trench
• Drain-Source Breakdown Voltage VDSS 20 V
Technology to provide excellent RDS(ON) and low gate
• Drain-Source On-Resistance
charge which is suitable for most of the synchronous
RDS(ON) 22mΩ, at VGS= 4.5V, IDS= 4.0A
buck converter applications .
RDS(ON) 27mΩ, at VGS= 2.5V, IDS= 3.0A
℃I
• Continuous Drain Current at TA=25
D
= 4.0A
• Advanced high cell density Trench Technology
• RoHS Compliance & Halogen Free
Applications
• Power Management
• Lithium Ion Battery
Package Outline
Schematic
Drain
Drain
Gate
Source
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Source
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Jun, 2015
CT2300-R3
N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
Ratings
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
±12
V
4.0
A
1
13.5
A
1
W
2
ID
Continuous Drain Current @TA=25
IDM
Pulsed Drain Current
PD
℃
℃
Total Power Dissipation @TA=25
1.25
TSTG
Storage Temperature Range
-55 to 150
o
TJ
Operating Junction Temperature Range
-55 to 150
oC
Notes
C
Thermal Characteristics
Symbol
RӨJA
Parameters
Test Conditions
Min
Typ
Max
-
175
-
Thermal Resistance
Units
oC
/W
Notes
1,4
Junction-Ambient (t=10s)
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CT2300-R3
N-Channel Enhancement MOSFET
Electrical Characteristics T
A
= 25°C (unless otherwise specified)
Static Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID= 250µA
20
-
-
V
IDSS
Drain-Source Leakage Current
VDS = 20V, VGS = 0V
-
-
1
µA
IGSS
Gate-Source Leakage Current
VGS = ±12V, VDS = 0V
-
-
±100
nA
Test Conditions
Min
Typ
Max
Units
VGS = 4.5V, ID = 4.5A
-
22
33
mΩ
VGS = 2.5V, ID = 4.0A
-
27
40
mΩ
VGS = VDS, ID =250µA
0.4
-
1.0
V
Units
Notes
On Characteristics
Symbol
Parameters
RDS(ON)
Drain-Source On-Resistance
VGS(TH)
Gate-Source Threshold Voltage
Notes
Dynamic Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
CISS
Input Capacitance
VDS = 10V ,
-
600
-
COSS
Output Capacitance
VGS = 0V,
-
85
-
CRSS
Reverse Transfer Capacitance
f=1MHz
-
75
-
Test Conditions
Min
Typ
Max
-
3.5
-
-
23
-
Notes
pF
Switching Characteristics
Symbol
Parameters
TD(ON)
Turn-On Delay Time
TR
Rise Time
VDS = 10V , VGS = 4.5V,
Units
Notes
Fig
ns
TD(OFF)
Turn-Off Delay Time
TF
Fall Time
QG
Total Gate Charge
RG = 6Ω,
ID =1A
-
39
-
24
-
7.5
-
-
1
-
-
2
-
11 & 12
-
VDS = 10V , VGS = 4.5V,
QGS
Gate-Source Charge
QGD
Gate-Drain (Miller) Charge
Fig
ID = 4.5A
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nC
9 & 10
Rev 2
Jun, 2015
CT2300-R3
N-Channel Enhancement MOSFET
Drain-Source Diode Characteristics
Symbol
Parameters
Test Conditions
VSD
Body Diode Forward Voltage
VGS = 0V, ISD = 4.0A
ISD
Body Diode Continuous Current
Note:
Min
Typ
Max
Units
1.3
V
4.0
A
Notes
1
℃ junction temperature.
1. The power dissipation is limited by 150
2. Device mounted on a glass-epoxy board
FR-4
25.4 × 25.4 mm .
2 Oz Copper
Actual Size
3. The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2%
4. Thermal Resistance follow JESD51-3.
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CT2300-R3
N-Channel Enhancement MOSFET
Typical Characteristic Curves
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CT2300-R3
N-Channel Enhancement MOSFET
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CT2300-R3
N-Channel Enhancement MOSFET
Test Circuits & Waveforms
Figure 9: Gate Charge Test Circuit
Figure 10: Gate Charge Waveform
Figure 11: Switching Time Test Circuit
Figure 12: Switching Time Waveform
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CT2300-R3
N-Channel Enhancement MOSFET
Package Dimension (SC-59)
Note: Dimensions in mm
Recommended pad layout for surface mount leadform
Note: Dimensions in mm
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CT2300-R3
N-Channel Enhancement MOSFET
Marking Information
2300
2300
: Device Number
Ordering Information
Part Number
Description
Quantity
CT2300-R3
SC-59 Reel
3000 pcs
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CT2300-R3
N-Channel Enhancement MOSFET
Reflow Profile
Profile Feature
Pb-Free Assembly Profile
Temperature Min. (Tsmin)
150°C
Temperature Max. (Tsmax)
200°C
Time (ts) from (Tsmin to Tsmax)
60-120 seconds
Ramp-up Rate (tL to tP)
3°C/second max.
Liquidous Temperature (TL)
217°C
Time (tL) Maintained Above (TL)
60 – 150 seconds
Peak Body Package Temperature
260°C +0°C / -5°C
Time (tP) within 5°C of 260°C
30 seconds
Ramp-down Rate (TP to TL)
6°C/second max
Time 25°C to Peak Temperature
8 minutes max.
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CT2300-R3
N-Channel Enhancement MOSFET
DISCLAIMER
CT MICRO RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. CT MICRO DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
______________________________________________________________________________________
CT MICROELECTRONICS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT EXPRESS WRITTTEN APPROVAL OF CT MICROELECTRONICS LTD.
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical
support device or system whose failure to perform
implant into the body, or (b) support or sustain life,
can be reasonably expected to cause the failure of
or (c) whose failure to perform when properly used
the life support device or system, or to affect its
in accordance with instruction for use provided in
safety or effectiveness.
the labelling, can be reasonably expected to result
in significant injury to the user.
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