CT2300-R3 N-Channel Enhancement MOSFET Features Description The CT2300-R3 uses high performance Trench • Drain-Source Breakdown Voltage VDSS 20 V Technology to provide excellent RDS(ON) and low gate • Drain-Source On-Resistance charge which is suitable for most of the synchronous RDS(ON) 22mΩ, at VGS= 4.5V, IDS= 4.0A buck converter applications . RDS(ON) 27mΩ, at VGS= 2.5V, IDS= 3.0A ℃I • Continuous Drain Current at TA=25 D = 4.0A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free Applications • Power Management • Lithium Ion Battery Package Outline Schematic Drain Drain Gate Source CT Micro Proprietary & Confidential Gate Page 1 Source Rev 2 Jun, 2015 CT2300-R3 N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters Ratings Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12 V 4.0 A 1 13.5 A 1 W 2 ID Continuous Drain Current @TA=25 IDM Pulsed Drain Current PD ℃ ℃ Total Power Dissipation @TA=25 1.25 TSTG Storage Temperature Range -55 to 150 o TJ Operating Junction Temperature Range -55 to 150 oC Notes C Thermal Characteristics Symbol RӨJA Parameters Test Conditions Min Typ Max - 175 - Thermal Resistance Units oC /W Notes 1,4 Junction-Ambient (t=10s) CT Micro Proprietary & Confidential Page 2 Rev 2 Jun, 2015 CT2300-R3 N-Channel Enhancement MOSFET Electrical Characteristics T A = 25°C (unless otherwise specified) Static Characteristics Symbol Parameters Test Conditions Min Typ Max Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID= 250µA 20 - - V IDSS Drain-Source Leakage Current VDS = 20V, VGS = 0V - - 1 µA IGSS Gate-Source Leakage Current VGS = ±12V, VDS = 0V - - ±100 nA Test Conditions Min Typ Max Units VGS = 4.5V, ID = 4.5A - 22 33 mΩ VGS = 2.5V, ID = 4.0A - 27 40 mΩ VGS = VDS, ID =250µA 0.4 - 1.0 V Units Notes On Characteristics Symbol Parameters RDS(ON) Drain-Source On-Resistance VGS(TH) Gate-Source Threshold Voltage Notes Dynamic Characteristics Symbol Parameters Test Conditions Min Typ Max CISS Input Capacitance VDS = 10V , - 600 - COSS Output Capacitance VGS = 0V, - 85 - CRSS Reverse Transfer Capacitance f=1MHz - 75 - Test Conditions Min Typ Max - 3.5 - - 23 - Notes pF Switching Characteristics Symbol Parameters TD(ON) Turn-On Delay Time TR Rise Time VDS = 10V , VGS = 4.5V, Units Notes Fig ns TD(OFF) Turn-Off Delay Time TF Fall Time QG Total Gate Charge RG = 6Ω, ID =1A - 39 - 24 - 7.5 - - 1 - - 2 - 11 & 12 - VDS = 10V , VGS = 4.5V, QGS Gate-Source Charge QGD Gate-Drain (Miller) Charge Fig ID = 4.5A CT Micro Proprietary & Confidential Page 3 nC 9 & 10 Rev 2 Jun, 2015 CT2300-R3 N-Channel Enhancement MOSFET Drain-Source Diode Characteristics Symbol Parameters Test Conditions VSD Body Diode Forward Voltage VGS = 0V, ISD = 4.0A ISD Body Diode Continuous Current Note: Min Typ Max Units 1.3 V 4.0 A Notes 1 ℃ junction temperature. 1. The power dissipation is limited by 150 2. Device mounted on a glass-epoxy board FR-4 25.4 × 25.4 mm . 2 Oz Copper Actual Size 3. The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2% 4. Thermal Resistance follow JESD51-3. CT Micro Proprietary & Confidential Page 4 Rev 2 Jun, 2015 CT2300-R3 N-Channel Enhancement MOSFET Typical Characteristic Curves CT Micro Proprietary & Confidential Page 5 Rev 2 Jun, 2015 CT2300-R3 N-Channel Enhancement MOSFET CT Micro Proprietary & Confidential Page 6 Rev 2 Jun, 2015 CT2300-R3 N-Channel Enhancement MOSFET Test Circuits & Waveforms Figure 9: Gate Charge Test Circuit Figure 10: Gate Charge Waveform Figure 11: Switching Time Test Circuit Figure 12: Switching Time Waveform CT Micro Proprietary & Confidential Page 7 Rev 2 Jun, 2015 CT2300-R3 N-Channel Enhancement MOSFET Package Dimension (SC-59) Note: Dimensions in mm Recommended pad layout for surface mount leadform Note: Dimensions in mm CT Micro Proprietary & Confidential Page 8 Rev 2 Jun, 2015 CT2300-R3 N-Channel Enhancement MOSFET Marking Information 2300 2300 : Device Number Ordering Information Part Number Description Quantity CT2300-R3 SC-59 Reel 3000 pcs CT Micro Proprietary & Confidential Page 9 Rev 2 Jun, 2015 CT2300-R3 N-Channel Enhancement MOSFET Reflow Profile Profile Feature Pb-Free Assembly Profile Temperature Min. (Tsmin) 150°C Temperature Max. (Tsmax) 200°C Time (ts) from (Tsmin to Tsmax) 60-120 seconds Ramp-up Rate (tL to tP) 3°C/second max. Liquidous Temperature (TL) 217°C Time (tL) Maintained Above (TL) 60 – 150 seconds Peak Body Package Temperature 260°C +0°C / -5°C Time (tP) within 5°C of 260°C 30 seconds Ramp-down Rate (TP to TL) 6°C/second max Time 25°C to Peak Temperature 8 minutes max. CT Micro Proprietary & Confidential Page 10 Rev 2 Jun, 2015 CT2300-R3 N-Channel Enhancement MOSFET DISCLAIMER CT MICRO RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. CT MICRO DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. ______________________________________________________________________________________ CT MICROELECTRONICS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT EXPRESS WRITTTEN APPROVAL OF CT MICROELECTRONICS LTD. 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical support device or system whose failure to perform implant into the body, or (b) support or sustain life, can be reasonably expected to cause the failure of or (c) whose failure to perform when properly used the life support device or system, or to affect its in accordance with instruction for use provided in safety or effectiveness. the labelling, can be reasonably expected to result in significant injury to the user. CT Micro Proprietary & Confidential Page 11 Rev 2 Jun, 2015