Vishay DG613EEY-T1-GE4 1.4 pc charge injection, 100 pa leakage, quad spst switch Datasheet

DG611E, DG612E, DG613E
www.vishay.com
Vishay Siliconix
1.4 pC Charge Injection, 100 pA Leakage, Quad SPST Switches
DESCRIPTION
FEATURES
The DG611E, DG612E, and DG613E contain four
independently selectable SPST switches. They offer
improved performance over the industry standard DG611
series. The DG611E and DG612E have all switches normally
closed and normally open respectively, while the DG613E
has 2 normally open and 2 normally closed switches.
• Low charge injection (1.4 pC typ.)
•
•
•
•
They are designed to operate from a 3 V to 12 V single
supply or from ± 3 V to ± 5 V dual supplies and are fully
specified at +3 V, +5 V and ± 5 V. All control logic inputs
have guaranteed 2 V logic high limits when operating from
+5 V or ± 5 V supplies and 1.4 V when operating from a
+3 V supply.
•
•
•
•
•
•
The DG611E, DG612E, and DG613E switches conduct
equally well in both directions and offer rail to rail analog
signal handling.
•
1.4 pC low charge injection, coupled with very low switch
capacitance: 3 pF, fast switching speed: ton/toff 23 ns/14 ns
and excellent 3 dB bandwidth: 1 GHz, make these products
ideal for precision instrumentation, high-end data
acquisition, automated test equipment and high speed
communication applications.
Leakage current < 0.25 nA at 85 °C
Low switch capacitance (Csoff 3 pF typ.)
Low RDS(on) - 115  max.
Fully specified with single supply operation at
3 V, 5 V, and dual supplies at ± 5 V
Low voltage, 2.5 V CMOS/TTL compatible
1 GHz, 3 dB bandwidth
Excellent isolation performance (-59 dB at 10 MHz)
Excellent crosstalk performance (-74 dB at 10 MHz)
Fully specified from -40 °C to +85 °C and -40 °C to +125 °C
16 lead SOIC, TSSOP and miniQFN package
(1.8 mm x 2.6 mm)
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
•
•
•
•
•
•
•
Operation temperature is specified from -40 °C to +125 °C.
The DG611E, DG612E, and DG613E are available in 16 lead
SOIC, TSSOP and the space saving 1.8 mm x 2.6 mm
miniQFN packages.
Precision instrumentation
Medical instrumentation
Automated test equipment
High speed communications applications
High-end data acquisition
Sample and hold applications
Sample and hold systems
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG611E
SOIC/TSSOP
DG611E
miniQFN
D1 IN1 IN2 D2
IN1
1
16
IN2
D1
2
15
D2
S1
3
14
S2
V-
4
13
V+
GND
5
12
NC
S4
6
11
S3
D4
7
10
D3
IN4
8
9
Top View
IN3
16
Txx
Pin 1
14
13
S1
1
12
S2
V-
2
11
V+
GND
3
10
NC
S4
4
9
S3
5
Device Marking: Txx for DG611E
(miniQFN16)
Uxx for DG612E
Vxx for DG613E
xx = Date/Lot Traceability Code
15
6
7
8
D4 IN4 IN3 D3
Top View
TRUTH TABLE
LOGIC
DG611E
DG612E
0
On
Off
1
Off
On
S17-0578-Rev. A, 24-Apr-17
Document Number: 78910
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG611E, DG612E, DG613E
www.vishay.com
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG613E
SOIC/TSSOP
DG613E
miniQFN
D1 IN1 IN2 D2
16
15
14
13
IN1
1
16
IN2
D1
2
15
D2
S1
1
12
S2
S1
3
14
S2
V-
2
11
V+
V-
4
13
V+
GND
3
10
NC
S4
4
9
S3
GND
5
12
NC
S4
6
11
S3
D4
7
10
D3
IN4
8
9
IN3
5
6
7
8
D4 IN4 IN3 D3
Top View
Top View
Vxx
Pin 1
Device Marking: Vxx for DG613E
(miniQFN16)
TRUTH TABLE
LOGIC
SW1, SW4
0
Off
SW2, SW3
On
1
On
Off
ORDERING INFORMATION
TEMP. RANGE
PACKAGE
PART NUMBER
DG611EEQ-T1-GE4
16-pin TSSOP
DG612EEQ-T1-GE4
DG613EEQ-T1-GE4
DG611EEY-T1-GE4
-40 °C to +125 °C a
16-pin narrow SOIC
DG612EEY-T1-GE4
DG613EEY-T1-GE4
DG611EEN-T1-GE4
16-pin miniQFN
DG612EEN-T1-GE4
DG613EEN-T1-GE4
Note
a. -40 °C to +85 °C datasheet limits apply
S17-0578-Rev. A, 24-Apr-17
Document Number: 78910
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG611E, DG612E, DG613E
www.vishay.com
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
LIMIT
V+ to VGND to VDigital inputs
UNIT
14
7
a,
VS, VD
Continuous current (any terminal)
30
Peak current, S or D (pulsed 1 ms, 10 % duty cycle)
100
Storage temperature
Power dissipation (package) b
Thermal resistance (package) b
-65 to +150
16-pin TSSOP c
450
16-pin miniQFN d
525
16-pin narrow SOIC e
640
16-pin TSSOP
178
16-pin miniQFN
152
16-pin narrow SOIC
125
ESD / HBM
EIA / JESD22-A114-A
2k
ESD / CDM
EIA / JESD22-C101-A
1k
JESD78
300
Latch up
V
(V-) - 0.3 V to (V+) + 0.3 V
or 30 mA, whichever occurs first
mA
°C
mW
°C/W
V
mA
Notes
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings
b. All leads welded or soldered to PC board
c. Derate 5.6 mW/°C above 70 °C
d. Derate 6.6 mW/°C above 70 °C
e. Derate 8 mW/°C above 70 °C
f. Manual soldering with iron is not recommended for leadless components. The miniQFN-16 is a leadless package. The end of the lead
terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip
cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection
S17-0578-Rev. A, 24-Apr-17
Document Number: 78910
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG611E, DG612E, DG613E
www.vishay.com
Vishay Siliconix
SPECIFICATIONS FOR DUAL SUPPLIES (V+ = +5 V, V- = -5 V)
TEST CONDITIONS
LIMITS
UNLESS OTHERWISE SPECIFIED
b
-40
°C
to
+125
°C
SYMBOL
TEMP.
V + = +5 V, V - = - 5 V
TYP. c
d
MIN.
MAX. d
VIN = 2 V, 0.8 V a
PARAMETER
-40 °C to +85 °C
MIN. d
UNIT
MAX. d
Analog Switch
Analog signal range e
Drain-source
On-resistance
VANALOG
RDS(on)
IS = 1 mA, VD = -3 V, 0 V, +3 V
On-resistance match
RDS(on)
IS = 1 mA, VD = ± 3 V
On-resistance flatness
Rflat(on)
IS = 1 mA, VD = -3 V, 0 V, +3 V
IS(off)
Switch off
leakage current
ID(off)
Switch on
leakage current
V+ = 5.5 V, V- = -5.5 V
VD = +4.5 V / -4.5 V
VS = -4.5 V / +4.5 V
Full
-
-5
5
-5
5
Room
72
-
115
-
115
140
Full
-
-
160
-
Room
0.6
-
2.5
-
2.5
Full
-
-
5
-
4.5
Room
15
-
20
-
20
Full
-
-
30
-
25
Room
±
0.0005
-0.1
0.1
-0.1
0.1
0.25
Full
-
-2
2
-0.25
Room
± 0.006
-0.1
0.1
-0.1
0.1
Full
-
-2
2
-0.25
0.25
ID(on)
V+ = 5.5 V, V- = -5.5 V
VD = VS = ± 4.5 V
Room
± 0.008
-0.1
0.1
-0.1
0.1
Full
-
-6
6
-0.25
0.25
V

nA
Digital Control
Input current, VIN low
IIL
VIN under test = 0.8 V
Full
0.01
-0.1
0.1
-0.1
0.1
Input current, VIN high
IIH
VIN under test = 2 V
Full
0.01
-0.1
0.1
-0.1
0.1
Input capacitance e
CIN
f = 1 MHz
Room
3
-
-
-
-
Room
23
-
50
-
50
Full
-
-
75
-
60
Room
14
-
35
-
35
Full
-
-
50
-
45
μA
pF
Dynamic Characteristics
Turn-on time
tON
Turn-off time
tOFF
Break-before-make
time delay
tBBM
DG613E only, VS = 3 V
RL = 300 , CL = 35 pF
Room
15
-
-
-
-
Full
-
2
-
2
-
QINJ
Vg = 0 V, Rg = 0 , CL = 1 nF
Room
1.4
-
-
-
-
Room
-59
-
-
-
-
Charge injection
e
RL = 300 , CL = 35 pF
VS = ± 3 V
Off isolation e
OIRR
Channel-to-channel
crosstalk e
XTALK
RL = 50 , CL = 5 pF
f = 10 MHz
Room
-74
-
-
-
-
BW
RL = 50 , CL = 5 pF
Room
1
-
-
-
-
Room
3
-
-
-
-
Room
3
-
-
-
-
Bandwidth e
Source off
capacitance e
CS(off)
Drain off
capacitance e
CD(off)
Drain on
capacitance e
CD(on)
f = 1 MHz; VS = VD = 0 V
Room
7
-
-
-
-
Total harmonic
distortion e
THD
Signal = 1 VRMS, 20 Hz to 20 kHz,
RL = 600 
Room
0.13
-
-
-
-
Room
0.001
-
0.1
-
0.1
Full
-
-
1
-
1
Room
-0.001
-0.1
-
-0.1
-
Full
-
-1
-
-1
-
Room
-0.001
-0.1
-
-0.1
-
Full
-
-1
-
-1
-
ns
pC
dB
GHz
f = 1 MHz; VS = 0 V
pF
%
Power Supplies
Power supply current
I+
Negative supply
current
I-
Ground current
IGND
S17-0578-Rev. A, 24-Apr-17
V+ = +5 V, V- = -5 V
VIN = 0 V or 5 V
μA
Document Number: 78910
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG611E, DG612E, DG613E
www.vishay.com
Vishay Siliconix
SPECIFICATIONS FOR SINGLE SUPPLIES (V+ = +5 V, V- = 0 V)
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
SYMBOL
V+ = +5 V, V- = 0 V
VIN = 2 V, 0.8 V a
PARAMETER
LIMITS
TEMP.b
TYP.C
-40 °C to +125 °C
MIN.
d
MAX.
d
-40 °C to +85 °C
MIN. d
UNIT
MAX. d
Analog Switch
Analog signal range e
VANALOG
Full
-
0
5
0
5
130
-
170
-
170
215
RDS(on)
V+ = 5 V, V- = 0 V
IS = 1 mA, VD = +3.5 V
Room
Full
-
-
235
-
On-resistance match
RDS(on)
V+ = 5 V, V- = 0 V,
IS = 1 mA, VD = 3.5 V
Room
0.6
-
5
-
5
Full
-
-
12
-
10
On-resistance flatness
Rflat(on)
V+ = 5 V, V- = 0 V,
IS = 1 mA, VD = 0 V, 3.5 V
Room
29
-
50
-
50
Full
-
-
100
-
90
Room
±
0.0005
-0.1
0.1
-0.1
0.1
0.25
Drain-source
On-resistance
IS(off)
Switch off
leakage current
ID(off)
Switch on
leakage current
V+ = 5.5 V, V- = 0 V
VD = 4.5 V / 1 V
VS = 1 V / 4.5 V
Full
-
-2
2
-0.25
Room
± 0.006
-0.1
0.1
-0.1
0.1
Full
-
-2
2
-0.25
0.25
ID(on)
V+ = 5.5 V, V- = 0 V
VD = VS = 1 V / 4.5 V
Room
± 0.008
-0.1
0.1
-0.1
0.1
Full
-
-6
6
-0.25
0.25
V

nA
Digital Control
Input current, VIN low
IIL
VIN under test = 0.8 V
Full
0.01
-0.1
0.1
-0.1
0.1
Input current, VIN high
IIH
VIN under test = 2 V
Full
0.01
-0.1
0.1
-0.1
0.1
Input capacitance e
CIN
f = 1 MHz
Room
4
-
-
-
-
Room
33
-
60
-
60
Full
-
-
90
-
80
Room
14
-
35
-
35
Full
-
-
45
-
40
Room
19
-
-
-
-
Full
-
2
-
2
-
μA
pF
Dynamic Characteristics
Turn-on time e
tON
RL = 300 , CL = 35 pF
VS = 3 V
Turn-off Time e
tOFF
Break-before-make
time delay e
tBBM
DG613E only, VS = 3 V
RL = 300 , CL = 35 pF
QINJ
Vg = 0 V, Rg = 0 , CL = 1 nF
Full
1.5
-
-
-
-
Room
-59
-
-
-
-
Charge injection
e
Off isolation e
OIRR
Channel-to-channel
crosstalk e
XTALK
RL = 50 , CL = 5 pF
f = 10 MHz
Room
-70
-
-
-
-
BW
RL = 50 , CL = 5 pF
Room
880
-
-
-
-
Room
3
-
-
-
-
Room
3
-
-
-
-
Room
7
-
-
-
-
Room
0.001
-
0.1
-
0.1
Full
-
-
1
-
1
Room
-0.001
-0.1
-
-0.1
-
Full
-
-1
-
-1
-
Room
-0.001
-0.1
-
-0.1
-
Full
-
-1
-
-1
-
Bandwidth e
Source off
capacitance e
CS(off)
Drain off capacitance e
CD(off)
e
CD(on)
Drain on capacitance
f = 1 MHz; VS = 0 V
f = 1 MHz; VS = VD = 0 V
ns
pC
dB
MHz
pF
Power Supplies
Power supply current
I+
Negative supply
current
I-
Ground current
IGND
S17-0578-Rev. A, 24-Apr-17
VIN = 0 V or 5 V
μA
Document Number: 78910
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG611E, DG612E, DG613E
www.vishay.com
Vishay Siliconix
SPECIFICATIONS FOR SINGLE SUPPLIES (V+ = +3 V, V- = 0 V)
PARAMETER
TEST CONDITIONS
LIMITS
UNLESS OTHERWISE SPECIFIED
b
-40
°C
to
+125
°C
SYMBOL
TEMP.
V + = +3 V, V - = - 0 V
TYP. c
d
MIN.
MAX. d
VIN = 1.4 V, 0.6 V a
-40 °C to +85 °C
MIN. d
UNIT
MAX. d
Analog Switch
Analog signal range e
Drain source
On-resistance
VANALOG
RDS(on)
IS = 1 mA, VD = +1.5 V
IS(off)
V+ = 3.3 V, V- = 0 V
VD = 3 V / 0.3 V
VS = 0.3 V / 3 V
Switch off
leakage current
ID(off)
Switch on
leakage current
Full
-
0
3
0
3
V
Room
305
-
420
-
420
Full
-
-
600
-
500

Room
±
0.0005
-0.1
0.1
-0.1
0.1
0.25
Full
-
-2
2
-0.25
Room
± 0.006
-0.1
0.1
-0.1
0.1
Full
-
-2
2
-0.25
0.25
ID(on)
V+ = 3.3 V, V- = 0 V
VD = VS = 0.3 V / 3 V
Room
± 0.008
-0.1
0.1
-0.1
0.1
Full
-
-6
6
-0.25
0.25
nA
Digital Control
Input current, VIN low
IIL
VIN under test = 0.6 V
Full
0.01
-0.1
0.1
-0.1
0.1
Input current, VIN high
IIH
VIN under test = 1.4 V
Full
0.01
-0.1
0.1
-0.1
0.1
Input capacitance e
CIN
f = 1 MHz
Room
4
-
-
-
-
Room
76
-
115
-
115
Full
-
-
180
-
155
Room
31
-
58
-
58
Full
-
-
65
-
60
μA
pF
Dynamic Characteristics
Turn-on time
tON
Turn-off time
tOFF
Break-before-make
time delay
tBBM
DG613 only, VS = 2 V
RL = 300 , CL = 35 pF
Room
60
-
-
-
-
Full
-
10
-
10
-
Vg = 0 V, Rg = 0 , CL = 1 nF
Room
1.4
-
-
-
-
Room
-59
-
-
-
-
RL = 300 , CL = 35 pF
VS = 2 V
Charge injection e
QINJ
Off isolation e
OIRR
Channel-to-channel
crosstalk e
XTALK
RL = 50 , CL = 5 pF
f = 10 MHz
Room
-71
-
-
-
-
BW
RL = 50 , CL = 5 pF
Room
830
-
-
-
-
Room
3
-
-
-
-
Bandwidth e
Source off capacitance e
CS(off)
Drain off capacitance e
CD(off)
Drain on capacitance e
CD(on)
f = 1 MHz; VS = 0 V
f = 1 MHz; VS = VD = 0 V
Room
4
-
-
-
-
Room
7
-
-
-
-
Room
0.001
-
0.1
-
0.1
Full
-
-
1
-
1
Room
-0.001
-0.1
-
-0.1
-
Full
-
-1
-
-1
-
Room
-0.001
-0.1
-
-0.1
-
Full
-
-1
-
-1
-
ns
pC
dB
MHz
pF
Power Supplies
Power supply current
I+
Negative supply
current
I-
Ground current
IGND
VIN = 0 V or 3 V
μA
Notes
a. VIN = input voltage to perform proper function
b. Room = 25 °C, Full = as determined by the operating temperature suffix
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet
e. Guaranteed by design, not subject to production test
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-0578-Rev. A, 24-Apr-17
Document Number: 78910
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG611E, DG612E, DG613E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
V± = ± 3 V
350
80
1000
1st line
2nd line
70
60
50
100
40
V± = ± 5 V
30
V+ = +3 V
300
1000
250
V+ = +5 V
200
150
100
V+ = +13.2 V
100
50
20
0
10
10
-7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14
VD - Analog Voltage (V)
2nd line
VD - Analog Voltage (V)
2nd line
On-Resistance vs. VD (Dual Supply)
On-Resistance vs. VD (Single Supply)
Axis Title
250
10000
+85 °C
1000
+25 °C
100
V± = ± 5 V
IS = 1 mA
-5
-4
-3
2nd line
RON - On-Resistance (Ω)
+125 °C
0
1
2
3
4
+125 °C
190
+85 °C
1000
+25 °C
170
150
130
100
110
90
-40 °C
50
10
-1
210
70
-40 °C
-2
10000
V+ = +5 V
IS = 1 mA
230
1st line
2nd line
150
140
130
120
110
100
90
80
70
60
50
40
30
20
1st line
2nd line
5
10
0
1
2
3
4
5
VD - Analog Voltage (V)
2nd line
VD - Analog Voltage (V)
2nd line
On-Resistance vs. Temperature (Dual Supply)
On-Resistance vs. Temperature (Single Supply)
Axis Title
Axis Title
400
380
360
340
320
300
280
260
240
220
200
180
160
140
120
100
2.0
10000
V+ = +3 V
IS = 1 mA
1st line
2nd line
1000
100
+85 °C
+25 °C
1.6
1.4
10
2
3
V± = ± 5 V
1000
1.2
V+ = +3 V
1.0
0.8
100
0.6
0.4
0.2
-40 °C
1
2nd line
QINJ - Charge Injection (pC)
+125 °C
0
10000
V+ = +5 V
1.8
1st line
2nd line
2nd line
RON - On-Resistance (Ω)
Axis Title
2nd line
RON - On-Resistance (Ω)
10000
IS = 1 mA
1st line
2nd line
IS = 1 mA
90
2nd line
RON - On-Resistance (Ω)
Axis Title
400
10000
2nd line
RON - On-Resistance (Ω)
100
0
CL=1 nF
10
-6 -5 -4 -3 -2 -1
0
1
2
3
4
5
VD - Analog Voltage (V)
2nd line
VS - Analog Voltage (V)
2nd line
On-Resistance vs. Temperature (Single Supply)
Charge Injection vs. Analog Voltage
S17-0578-Rev. A, 24-Apr-17
6
Document Number: 78910
7
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG611E, DG612E, DG613E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
IS(OFF), VD = 0.3 V, VS = 3 V
400
IS(OFF), VD = -4.5 V, VS = 4.5 V
ID(ON), VD = 3 V
500
IS(OFF), VD = 3 V, VS = 0.3 V
ID(OFF), VD = 3 V, VS = 0.3 V
1000
100
0
-100
-200
100
ID(ON), VD = 0.3 V
-300
2nd line
Leakage Current (pA)
200
ID(OFF), VD = 0.3 V, VS = 3 V
-400
V+ = +3.3 V
-500
-40
-20
0
40
60
80
300
100
ID(ON), VD = 4.5 V
ID(OFF), VD = 4.5 V, VS = -4.5 V
-100
100
-300
ID(OFF), VD = -4.5 V, VS = 4.5 V
ID(ON), VD = -4.5 V
V± = ± 5.5 V
-700
100 120
10
-40
-20
0
20
Axis Title
0
ID(ON), VD = 1 V
-200
100
ID(OFF), VD = 1 V, VS = 4.5 V
-300
-400
V+ = +5.5 V
-500
-40
-20
0
40
60
80
V+ = +5 V, tON
V± = ± 5 V, tON
40
100
V+ = +5 V, tOFF
20
V± = ± 5 V, tOFF
100 120
10
-50
0
50
Temperature (°C)
2nd line
Leakage Current vs. Temperature
Switching Time vs. Temperature
Axis Title
150
Axis Title
10000
10000
100
1000
200
150
100
100
90
1000
80
100
70
V+ = +5 V
VIN = 2.5 V
50
0
10
-40 -20
0
20
40
60
80 100 120 140
1st line
2nd line
250
2nd line
I+ - Supply Current (μA)
V+ = +5 V
VIN = V+ or GND
1st line
2nd line
2nd line
I+ - Supply Current (nA)
100
Temperature (°C)
2nd line
350
300
1000
0
10
20
60
1st line
2nd line
1st line
2nd line
2nd line
Leakage Current (pA)
1000
2nd line
tON(IN), tOFF(IN) - Switching Time (ns)
ID(ON), VD = 4.5 V
ID(OFF), VD = 4.5 V, VS = 1 V
10000
80
IS(OFF), VD = 4.5 V, VS = 1 V
-100
100 120
Leakage Current vs. Temperature
IS(OFF), VD = 1 V, VS = 4.5 V
100
80
Leakage Current vs. Temperature
10000
200
60
Temperature (°C)
2nd line
Axis Title
300
40
Temperature (°C)
2nd line
500
400
1000
IS(OFF), VD = 4.5 V, VS = -4.5 V
-500
10
20
10000
700
1st line
2nd line
2nd line
Leakage Current (pA)
300
Axis Title
10000
1st line
2nd line
500
60
10
-40 -20
0
20
40
60
80 100 120 140
Temperature (°C)
2nd line
Temperature (°C)
2nd line
Supply Current vs. Temperature
Supply Current vs. Temperature
S17-0578-Rev. A, 24-Apr-17
Document Number: 78910
8
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG611E, DG612E, DG613E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
1000
10000
100 000
1000
1
1st line
2nd line
V+ = +5 V
0.1
V+ = +3 V
0.01
100
0.001
0.0001
1000
100
1
0.1
0.01
10
100
1000
10K
100K
1M
10
10M
0.001
0.00001
10
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Input Switching Frequency (Hz)
2nd line
VIN (V)
2nd line
Supply Current vs. Switching Frequency
Supply Current vs. Input Voltage
Axis Title
Axis Title
100
10
1000
1st line
2nd line
I+
1
I-
0.1
0.01
100
IGND
0.001
2nd line
Loss, OIRR, XTALK (dB)
V+ = +5 V
V- = -5 V
1000
0.0001
0.00001
10
1000
100K
10
10M
10
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
100K
10000
Loss
1000
1st line
2nd line
10000
10 000
OIRR
100
XTALK
V± = ± 5 V
1M
10M
100M
10
1G
Input Switching Frequency (Hz)
2nd line
Frequency (Hz)
2nd line
Supply Current vs. Switching Frequency
Insertion Loss, Off-Isolation, Crosstalk vs. Frequency
Axis Title
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
Axis Title
10000
2.0
10000
-40 C VINH
1st line
2nd line
1000
125 C VINL
100
10
2
3
4
5
6
7
8
9 10 11 12 13 14
2nd line
VIN - Switching Threshold (V)
1.8
1.6
-40 °C VINH
1.4
1000
1.2
1.0
1st line
2nd line
2nd line
I+, I-, IGND - Supply Current (μA)
100
V+ = 3 V
0.0001
0.00001
2nd line
VIN - Switching Threshold (V)
1000
V+ = 5 V
10
1st line
2nd line
10
2nd line
I+ - Supply Current (μA)
100
2nd line
I+ - Supply Current (μA)
10000
10 000
125 °C VINL
0.8
100
0.6
0.4
0.2
0
10
2
3
4
5
6
7
V+ - Supply Voltage (V), Single Supply
2nd line
V± - Supply Voltage (V), Dual Supply
2nd line
Switching Threshold vs. Supply Voltage (Single Supply)
Switching Threshold vs. Supply Voltage (Dual Supply)
S17-0578-Rev. A, 24-Apr-17
Document Number: 78910
9
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG611E, DG612E, DG613E
www.vishay.com
Vishay Siliconix
TEST CIRCUITS
+5V
tr < 5 ns
tf < 5 ns
3V
Logic
Input
50 %
0V
V+
VS
S
tOFF
D
Switch
Input*
VO
VS
VO
IN
RL
300 Ω
V-
GND
CL
35 pF
90 %
90 %
0V
tON
- 5V
Note:
CL (includes fixture and stray capacitance)
Logic input waveform is inverted for switches that
have the opposite logic sense control
RL
VO = V S
RL + rDS(on)
Fig. 1 - Switching Time
+5V
3V
Logic
Input
V+
VS1
S1
D1
VO1
IN1
VS2
Switch
Output
IN2
RL1
300 Ω
V-
GND
90 %
VO2
D2
S2
50 %
0V
VS1
VO1
RL2
300 Ω
CL1
35 pF
CL2
35 pF
0V
VS2
VO2
0V
Switch
Output
90 %
tD
tD
-5V
CL (includes fixture and stray capacitance)
Fig. 2 - Break-Before-Make (DG613E)
ΔVO
+5V
Rg
INX
V+
S
ON
OFF
VO
CL
1 nF
3V
GND
OFF
D
IN
Vg
VO
V-
INX
OFF
ON
Q = ΔVO x CL
OFF
-5V
Fig. 3 - Charge Injection
S17-0578-Rev. A, 24-Apr-17
Document Number: 78910
10
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG611E, DG612E, DG613E
www.vishay.com
Vishay Siliconix
TEST CIRCUITS
+5V
C
V+
D1
S1
VS
Rg = 50 Ω
50 Ω
IN1
0 V, 2.4 V
S2
D2
VO
NC
RL
IN2
0 V, 2.4 V
GND
V-
C
VO
XTALK Isolation = 20 log
-5V
VS
C = RF bypass
Fig. 4 - Crosstalk
+5V
+5V
C
C
V+
VO
D
S
VS
V+
S
Rg = 50 Ω
0 V, 2.4 V
RL
50 Ω
IN
Meter
IN
GND
V-
C
HP4192A
Impedance
Analyzer
or Equivalent
0 V, 2.4 V
D
GND
-5V
Off Isolation = 20 log
V-
C
VO
VS
-5V
C = RF Bypass
Fig. 5 - Off-Isolation
Fig. 6 - Source / Drain Capacitances
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?78910.
S17-0578-Rev. A, 24-Apr-17
Document Number: 78910
11
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
Thin miniQFN16 Case Outline
B
12
0.10 C
Terminal tip (4)
16 x b
D
A
11
9
9
10
10
11
0.10 M C A B
0.05 M C
12
13
8
8
13
14
7
7
14
6
6
15
5
5
E
15
16
1
2
3
4
16
4
Pin #1 identifier (5)
15 x L
0.10 C
Top view
3
2
L1
1
e
Bottom view
0.10 C
C
A
Seating
plane
0.10 C
A3
Side view
DIMENSIONS
MILLIMETERS (1)
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.50
0.55
0.60
0.020
0.022
0.024
A1
0
-
0.05
0
-
0.002
A3
0.15 ref.
b
0.15
D
2.50
e
0.006 ref.
0.20
0.25
0.006
2.60
2.70
0.098
0.40 BSC
E
1.70
1.80
0.008
0.010
0.102
0.106
0.016 BSC
1.90
0.067
0.071
0.075
L
0.35
0.40
0.45
0.014
0.016
0.018
L1
0.45
0.50
0.55
0.018
0.020
0.022
N (3)
16
16
Nd (3)
4
4
(3)
4
4
Ne
Notes
(1) Use millimeters as the primary measurement.
(2) Dimensioning and tolerances conform to ASME Y14.5M. - 1994.
(3) N is the number of terminals. Nd and Ne is the number of terminals in each D and E site respectively.
(4) Dimensions b applies to plated terminal and is measured between 0.15 mm and 0.30 mm from terminal tip.
(5) The pin 1 identifier must be existed on the top surface of the package by using identification mark or other feature of package body.
(6) Package warpage max. 0.05 mm.
ECN: T16-0226-Rev. B, 09-May-16
DWG: 6023
Revision: 09-May-16
Document Number: 64694
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOIC (NARROW):
16ĆLEAD
JEDEC Part Number: MS-012
MILLIMETERS
16
15
14
13
12
11
10
Dim
A
A1
B
C
D
E
e
H
L
Ĭ
9
E
1
2
3
4
5
6
7
8
INCHES
Min
Max
Min
Max
1.35
1.75
0.053
0.069
0.10
0.20
0.004
0.008
0.38
0.51
0.015
0.020
0.18
0.23
0.007
0.009
9.80
10.00
0.385
0.393
3.80
4.00
0.149
0.157
1.27 BSC
0.050 BSC
5.80
6.20
0.228
0.244
0.50
0.93
0.020
0.037
0_
8_
0_
8_
ECN: S-03946—Rev. F, 09-Jul-01
DWG: 5300
H
D
C
All Leads
e
Document Number: 71194
02-Jul-01
B
A1
L
Ĭ
0.101 mm
0.004 IN
www.vishay.com
1
Package Information
Vishay Siliconix
TSSOP: 16-LEAD
DIMENSIONS IN MILLIMETERS
Symbols
Min
Nom
Max
A
-
1.10
1.20
A1
0.05
0.10
0.15
A2
-
1.00
1.05
0.38
B
0.22
0.28
C
-
0.127
-
D
4.90
5.00
5.10
E
6.10
6.40
6.70
E1
4.30
4.40
4.50
e
-
0.65
-
L
0.50
0.60
0.70
L1
0.90
1.00
1.10
y
-
-
0.10
θ1
0°
3°
6°
ECN: S-61920-Rev. D, 23-Oct-06
DWG: 5624
Document Number: 74417
23-Oct-06
www.vishay.com
1
PAD Pattern
www.vishay.com
Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR TSSOP-16
0.193
(4.90)
0.171
0.014
0.026
0.012
(0.35)
(0.65)
(0.30)
(4.35)
(7.15)
0.281
0.055
(1.40)
Recommended Minimum Pads
Dimensions in inches (mm)
Revision: 02-Sep-11
1
Document Number: 63550
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR MINI QFN 16L
0.562
(0.0221)
0.400
(0.0157)
0.225
(0.0089)
1
2.900
(0.1142)
0.463
(0.0182)
1.200
(0.0472)
2.100
(0.0827)
Mounting Footprint
Dimensions in mm (inch)
Document Number: 66557
Revision: 05-Mar-10
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-16
RECOMMENDED MINIMUM PADS FOR SO-16
0.372
(9.449)
0.152
0.022
0.050
0.028
(0.559)
(1.270)
(0.711)
(3.861)
0.246
(6.248)
0.047
(1.194)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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24
Document Number: 72608
Revision: 21-Jan-08
Legal Disclaimer Notice
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Vishay
Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000
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