CM1800DY-34S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual Half-Bridge IGBTMOD™ HVIGBT Series Module 1800 Amperes/1700 Volts G F A G G J (18 PLACES) H (12 PLACES) G E2 G2 C2 E2 C1 C1 F S L C2E1 V C B D C2E1 AA L L Q E F G1 E1 N K AG AF AF AF AH F FW AB U R K N N M (8 PLACES) AF T C1 P K X Y P L E2 G H F AJ AM AK AL AF AF AD AC (SCREWING DEPTH) Z (SCREWING DEPTH) F AE Tolerance Otherwise Specified (mm) Division of Dimension Tolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2 The tolerance of size between terminals is assumed to ±0.4 G2 E2 (Es2) C2 (Cs2) Tr2 E2 E2 C1 C1 C2E1 Di2 Di1 C2E1 Tr1 G1 E1 (Es1) C1 (Cs1) TH1 NTC TH2 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N P Q R S T 5/12 Rev. 1 Inches Millimeters 12.2 310.0 5.6 142.5 4.96 126.0 1.89 48.0 1.85 46.9 0.28 7.0 2.28 58.0 0.21±0.004 Dia. 5.5±0.1 Dia. M6 M6 1.65 42.0 0.91 23.0 M4 M4 0.35 9.0 0.47 11.9 0.21 5.4 0.33 8.5 4.92 125.0 0.6 15.0 Dimensions U V W X Y Z AA AB AC AD AE AF AG AH AJ AK AL AM Inches Millimeters 0.83 21.0 1.5 38.0 2.04 51.9 1.85+0.04/-0.02 47.1+1.0/-0.5 1.55 39.4 0.63 16.0 0.24 6.2 0.16 4.0 0.45 11.5 2.01+0.04/-0.02 51.0+1.0/-0.5 0.32 8.2 0.55 14.0 2.05 52.0 0.59 15.0 7.01 178.0 3.98 101.0 1.63 41.5 1.54 39.0 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking £ NTC Thermistor Applications: £ AC Motor Control £ Motion/Servo Control £ Photovoltaic/Wind £ UPS Inverter Ordering Information: Example: Select the complete module number you desire from the table below -i.e. CM1800DY-34S is a 1700V (VCES), 1800 Ampere Dual Half-Bridge IGBTMOD™ HVIGBT Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 1800 34 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1800DY-34S Dual Half-Bridge IGBTMOD™ HVIGBT Module 1800 Amperes/1700 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Inverter Part IGBT/FWDi Characteristics Symbol Rating Units Collector-Emitter Voltage (VGE = 0V) VCES 1700 Volts Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts Collector Current (DC, TC = 105°C)*2,*4 IC 1800 Amperes Collector Current (Pulse, Repetitive)*3 ICRM 3600 Amperes Ptot 11535 Watts Total Maximum Power Dissipation (TC = 25°C)*2,*4 Emitter Current, Free Wheeling Diode Forward Current (TC = 25°C)*2 *1 IE Emitter Current, Free Wheeling Diode Forward Current (Pulse, repetitive)*3 1800 Amperes IERM*1 3600 Amperes Symbol Rating Units Module Characteristics 125 °C Tj(opr) -40 to +150 °C Tstg -40 to +125 °C Tr2 Di2 Di1 Tr1 Tr2 Tr2 Di2 Di1 Tr1 Tr2 Di1 Di2 198.0 226.2 256.0 *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. *3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. 284.2 Storage Temperature Tr1 Tr2 Di2 Tr1 Tr2 Di1 Di2 Di1 Tr1 Tr2 Di2 Tr1 Tr2 Di1 Di2 Di1 Tr1 Tr2 Di2 Tr1 101.2 96.2 87.7 82.7 Di1 54.2 Tr1 40.7 Di1 Tr2 Di1 Di2 0 TC(max) Operating Junction Temperature 24.0 Maximum Case Temperature*4 52.2 °C 82.0 V 175 110.2 4000 Tj(max) 140.0 VISO Maximum Junction Temperature 168.2 Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute) Tr1 Di2 59.2 45.7 24.5 Th 0 25.7 54.0 46.5 83.7 112.0 141.7 170.0 199.7 228.0 257.7 286.0 0 LABEL SIDE Each mark points to the center position of each chip. Tr1 / Tr2: IGBT 2 Di1 / Di2: FWDi Th: NTC Thermistor 5/12 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1800DY-34S Dual Half-Bridge IGBTMOD™ HVIGBT Module 1800 Amperes/1700 Volts Electrical Characteristics, Tj = 25°C unless otherwise specified Inverter Part IGBT/FWDi Characteristics Symbol Test Conditions Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V — — 1 mA Gate-Emitter Leakage Current IGES VGE = VGES, VCE = 0V — — 5.0 µA Gate-Emitter Threshold Voltage VGE(th) IC = 45mA, VCE = 10V 5.4 6.0 6.6 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 1800A, VGE = 15V, Tj = 25°C*5 — 2.20 2.70 Volts (Terminal) IC = 1800A, VGE = 15V, Tj = 125°C*5 — 2.40 — Volts 150°C*5 — 2.45 — Volts VCE(sat) IC = 1800A, VGE = 15V, Tj = 25°C*5 — 2.10 2.60 Volts (Chip) IC = 1800A, VGE = 15V, Tj = 125°C*5 — 2.30 — Volts IC = 1800A, VGE = 15V, Tj = 150°C*5 — 2.35 — Volts Collector-Emitter Cutoff Current IC = 1800A, VGE = 15V, Tj = Collector-Emitter Saturation Voltage Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Gate Charge QG Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Emitter-Collector Voltage — — 460 nF VCE = 10V, VGE = 0V — — 48 nF — — 8.0 nF VCC = 1000V, IC = 1800A, VGE = 15V — 8400 — nC td(on) — — 1100 ns tr VCC = 1000V, IC = 1800A, VGE = ±15V, — — 200 ns td(off) RG = 0Ω, Inductive Load — — 950 ns — — 500 ns 25°C*5 — 2.00 2.50 Volts IE = 1800A, VGE = 0V, Tj = 125°C*5 — 2.10 — Volts tf *1 VEC (Terminal) IE = 1800A, VGE = 0V, Tj = IE = 1800A, VGE = 0V, Tj = 150°C*5 Emitter-Collector Voltage — 2.05 — Volts VEC*1 IE = 1800A, VGE = 0V, Tj = 25°C*5 — 1.9 2.40 Volts (Chip) 125°C*5 — 2.0 — Volts — 1.95 — Volts IE = 1800A, VGE = 0V, Tj = IE = 1800A, VGE = 0V, Tj = 150°C*5 Reverse Recovery Time trr*1 VCC = 1000V, IE = 1800A, VGE = ±15V — — 350 ns Reverse Recovery Charge Qrr*1 RG = 0Ω, Inductive Load — 360 — µC Turn-on Switching Energy per Pulse Eon VCC = 1000V, IC = IE = 1800A, — (TBD) — mJ Turn-off Switching Energy per Pulse Eoff VGE = ±15V, RG = 0Ω, — (TBD) — mJ Reverse Recovery Energy per Pulse *1 Tj = 150°C, Inductive Load — (TBD) — mJ Main Terminals-Chip, — 0.11 — mΩ — 1.1 — Ω Internal Lead Resistance Err RCC' + EE' Per Switch,TC = 25°C*4 Internal Gate Resistance rg Per Switch *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *4 Case temperature (TC) and heatsink temperature (Ts) are measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure on page 1 for chip location. The heatsink thermal resistance should be measured just under the chips. *5 Pulse width and repetition rate should be such as to cause negligible temperature rise. 5/12 Rev. 1 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1800DY-34S Dual Half-Bridge IGBTMOD™ HVIGBT Module 1800 Amperes/1700 Volts Electrical Characteristics, Tj = 25°C unless otherwise specified (continued) NTC Thermistor Part Characteristics Symbol Zero Power Resistance R25 Deviation of Resistance ∆R/R B Constant B(25/50) Power Dissipation Test Conditions TC = 25°C*2 TC = 100°C, R100 = 493Ω*4 Approximate by Equation*6 TC = 25°C*4 P25 Min. Typ. Max. Units 4.85 5.00 5.15 kΩ -7.3 — +7.8 % — 3375 — K — — 10 mW Min. Typ. Max. Units Thermal Resistance Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Thermal Resistance, Junction to Case*4 Rth(j-c)Q Per IGBT — — 13 K/kW Thermal Resistance, Junction to Case*4 Rth(j-c)D Per FWDi — — 22 K/kW Contact Thermal Resistance, Rth(c-s) — 3.1 — K/kW Thermal Grease Applied Case to Heatsink*4 (Per 1/2 Module)*7 Mechanical Characteristics Mounting Torque Mt Main Terminals, M6 Screw 31 35 40 in-lb Auxiliary Terminals, M4 Screw 12 13 15 in-lb Ms Mounting, M5 Screw 22 27 31 in-lb Creepage Distance ds Terminal to Terminal 16 — — mm Terminal to Baseplate 25 — — mm Clearance da Terminal to Terminal 16 — — mm Terminal to Baseplate 24 — — mm Weight m — 2000 — Grams Flatness of Baseplate ec On Centerline X, Y*8 -50 — +100 µm VCC Applied Across C1-E2 — 1000 1200 Volts Gate-Emitter Drive Voltage VGE(on) Applied Across G1-Es1/G2-Es2 13.5 15.0 16.5 Volts External Gate Resistance RG Per Switch 0 — 2 Ω MOUNTING SIDE 4 Tr1 Tr2 Di2 Tr1 Tr2 Di1 Tr1 Tr2 Di2 Di1 Tr1 Tr2 Di1 Di2 Tr1 Tr2 Di2 Di1 Tr1 Tr2 Di1 Di2 Tr1 Tr2 Di2 0 Tr1 101.2 96.2 87.7 82.7 Di1 54.2 Tr1 40.7 Di1 Tr2 Di1 Di2 24.0 52.2 82.0 110.2 140.0 168.2 198.0 Di1 Tr1 Di2 59.2 45.7 24.5 Th Y ec 0 - CONCAVE Each mark points to the center position of each chip. + CONVEX Tr1 / Tr2: IGBT Di1 / Di2: FWDi 0 25.7 54.0 46.5 83.7 112.0 141.7 170.0 199.7 228.0 257.7 X MOUNTING SIDE MOUNTING SIDE Di1 Tr2 Di2 286.0 - CONCAVE + CONVEX RECOMMENDED AREA FOR EVEN APPLICATION OF THERMALLY CONDUCTIVE GREASE (PER BASEPLATE) Tr2 Di2 226.2 *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. R25 1 1 *6 B(25/50) = In( )/( – ) R50 T25 T50 R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K] R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K] *7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. *8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below. 256.0 DC Supply Voltage 284.2 Recommended Operating Conditons, Ta = 25°C LABEL SIDE Th: NTC Thermistor 5/12 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1800DY-34S Dual Half-Bridge IGBTMOD™ HVIGBT Module 1800 Amperes/1700 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 4000 3.5 13.5 11 2500 2000 10 1500 1000 9 500 0 Tj = 25°C 0 2 4 6 8 3.0 2.5 2.0 1.5 1.0 0.5 0 10 0 600 8 IC = 3600A 6 IC = 1800A 4 IC = 720A 2 0 1200 1800 2400 3200 3600 Tj = 25°C 6 8 10 12 14 GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) CAPACITANCE, Cies, Coes, Cres, (nF) Cies 102 td(off) 102 Coes 101 Cres 100 103 td(on) tf tr 102 VCC = 1000V VGE = ±15V RG = 0Ω Tj = 150°C Inductive Load VGE = 0V 0.5 1.0 1.5 2.0 2.5 3.0 10-1 10-1 100 101 101 102 102 103 104 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(on) 103 td(off) tf tr 102 10-1 100 GATE RESISTANCE, RG, (Ω) 5/12 Rev. 1 101 103 102 101 102 SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) 103 VCC = 1000V VGE = ±15V IC = 1800A Tj = 150°C Inductive Load SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) SWITCHING TIME, (ns) 0 20 104 103 103 104 18 COLLECTOR CURRENT, IC, (AMPERES) Tj = 25°C Tj = 125°C Tj = 150°C 101 16 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 104 EMITTER CURRENT, IE, (AMPERES) 10 VGE = 15V Tj = 25°C Tj = 125°C Tj = 150°C SWITCHING TIME, (ns) COLLECTOR CURRENT, IC, (AMPERES) VGE = 20V 15 3000 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 12 3500 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) OUTPUT CHARACTERISTICS (TYPICAL) VCC = 1000V VGE = ±15V RG = 0Ω Tj = 125°C Eon Eoff Err 103 COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) 104 102 101 102 VCC = 1000V VGE = ±15V RG = 0Ω Tj = 150°C Eon Eoff Err 103 104 COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM1800DY-34S Dual Half-Bridge IGBTMOD™ HVIGBT Module 1800 Amperes/1700 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 102 10-1 100 101 103 102 10-1 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 20 VCC = 1000V IC = 1800A 15 0 0 2000 4000 6000 8000 1000012000 GATE CHARGE, QG, (nC) 6 102 102 101 10-3 10-3 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 16K/kW (IGBT) Rth(j-c) = 27K/kW (FWDi) 10-1 TIME, (s) 100 104 TURN-OFF SWITCHING SOA (RBSOA) 2x 10-2 103 EMITTER CURRENT, IE, (AMPERES) 100 10-2 5 103 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) 10-1 10 100 VCC = 1000V VGE = ±15V RG = 0Ω Tj = 150°C Inductive Load Irr trr GATE RESISTANCE, RG, (Ω) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) GATE RESISTANCE, RG, (Ω) GATE CHARGE VS. VGE Eon Eoff Err COLLECTOR CURRENT, IC, (NORMALIZED) Eon Eoff Err 104 VCC = 1000V VGE = ±15V IC = 1800A Tj = 150°C REVERSE RECOVERY, Irr (A), trr (ns) 104 VCC = 1000V VGE = ±15V IC = 1800A Tj = 125°C SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) 104 REVERSE RECOVERY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 101 VCC = ≤1200V VGE = ±15V RG = 0~2 Ω 1x 0 Tj = 25 ~ 150°C Normal Load Operations (Continuous) Tj ≤ 175°C Unusual Load Operations (Limited Period) 0 400 800 1200 1600 2000 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 5/12 Rev. 1