100mA / 50V Digital transistors (with built-in resistors) DTC144GE / DTC144GUA / DTC144GKA Applications Inverter, Interface, Driver Dimensions (Unit : mm) EMT3 (2) 2.0 0.9 0.2 0.3 0.7 1.25 EMT3 UMT3 SMT3 T106 3000 − (1) (2) T146 3000 − − 0.1Min. TL 3000 2.1 (3) − − 0.65 0.65 0.15 1.3 (1) GND (2) IN (3) OUT Each lead has same dimensions Abbreviated symbol : K26 − 2.9 SMT3 <SC-59> Inner circuit 1.1 0.4 0.8 1.6 2.8 (3) C R (2) (1) 0.95 0.95 E (1) GND (2) IN (3) OUT E : Emitter C : Collector B : Base 1.9 0.15 0.3Min. B 0.1Min. Each lead has same dimensions Abbreviated symbol : K26 UMT3 Taping Taping Taping DTC144GE DTC144GUA DTC144GKA 0.15 1.0 (1) GND Packaging specifications Basic ordering unit (pieces) 1.6 0.2 0.5 0.5 <SC-70> Part No. (1) 0.2 (3) OUT Package Packaging type Code 0.55 0.3 (3) (2) IN Structure NPN epitaxial planar silicon transistor (Resistor built-in type) 0.7 1.6 0.8 Features 1)The built-in bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input, and parasitic effects are almost completely eliminated. 2)Only the on / off conditions need to be set for operation, making the device design easy. 3)Higher mounting densities can be achieved. (SC-75A) <SOT-416> Each lead has same dimensions Abbreviated symbol : K26 R=47kΩ Absolute maximum ratings (Ta=25C) Symbol Limits Unit Collector-base voltage Parameter VCBO 50 Collector-emitter voltage VCEO 50 V V Emitter-base voltage VEBO 5 Collector current IC 100 Collector power DTC144GE dissipation DTC144GUA / DTC144GKA Pc V mA 150 mW 200 Junction temperature Tj 150 C Storage temperature Tstg −55 to +150 C www.rohm.com c 2011 ROHM Co., Ltd. All rights reserved. ○ 1/2 2011.09 - Rev.D DTC144GE / DTC144GUA / DTC144GKA Data Sheet Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit BVCBO 50 50 5 − − − − − − V V V IC=50μA IC=1mA IE=160μA − 65 − − − − 0.5 130 0.3 μA μA V VCB=50V VEB=4V 68 32.9 − 47 − 61.1 − kΩ IC=5mA , VCE=5V − − 250 − MHz Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio BVCEO BVEBO ICBO IEBO VCE(sat) hFE Emitter-base resistance R Transition frequency ∗ Characteristics of built-in transistor fT ∗ Conditions IC=10mA, IB=0.5mA VCE=10V , IE= −5mA , f=100MHz 1k VCE=5V Ta=100°C 500 DC CURRENT GAIN : hFE(V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Electrical characteristics curves Ta=25°C 200 100 50 Ta= −40°C 20 10 5 2 1 100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m Ta=100°C Ta=25°C 200m 100m 50m Ta=− 40°C 20m 10m 5m 2m 1m 100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m Fig.2 Collector-Emitter saturation vs. Collector current Fig.1 DC current gain vs. Collector current www.rohm.com IC/IB=20/1 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) c 2011 ROHM Co., Ltd. All rights reserved. ○ 1 500m 2/2 2011.09 - Rev.D Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. 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