HOTTECH BZT52C4V3S Plastic-encapsulate diode Datasheet

Plastic-Encapsulate Diodes
ZENER DIODES
BZT52C2V0S---BZT52C39S
FEATURES
Planar die construction
General purpose, Medium current
Ideally suited for automated assembly processes
Available in Lead free version
+
SOD-323
Maximum Ratings
@ Ta=25℃ unless otherwise specified
Characteristic
Symbol
Value
Unit
VF
0.9
V
Pd
200
mW
RθjA
625
/W
Junction temperature
Tj
150
Storage temperature range
Tstg
-65-150
Forward Voltage
@ IF=10mA
Power Dissipation
Thermal resistance,junction to ambient air
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
2. Short duration test pulse used in minimize self-heating effect.
3. f = 1KHz.
GUANGDONG HOTTECH
INDUSTRIAL CO,. LTD.
Page:P3-P1
Plastic-Encapsulate Diodes
BZT52C2V0S---BZT52C39S
Electrical Characteristics (Ta = 25
Type Number
unless otherwise specified )
Zener Voltage Range
Marking
Code
VZ@IZT
IZT
Nom(V)
Min(V)
Max(V)
mA
Maximum Zener
Maximum
Impedance
Reverse
ZZT@IZT
ZZK@IZK
Ω
Temperature Coefficient
of zener voltage @
IZTC mV/
IZK
IRCurrent
@VR
mA
μA
V
Min
Max
BZT52C2V0S
WY
2.0
1.91
2.09
5
100
600
1.0
150
1.0
-3.5
0
BZT52C2V4S
WX
2.4
2.2
2.60
5
100
600
1.0
50
1.0
-3.5
0
BZT52C2V7S
W1
2.7
2.5
2.9
5
100
600
1.0
20
1.0
-3.5
0
BZT52C3V0S
W2
3.0
2.8
3.2
5
95
600
1.0
10
1.0
-3.5
0
BZT52C3V3S
W3
3.3
3.1
3.5
5
95
600
1.0
5
1.0
-3.5
0
BZT52C3V6S
W4
3.6
3.4
3.8
5
90
600
1.0
5
1.0
-3.5
0
BZT52C3V9S
W5
3.9
3.7
4.1
5
90
600
1.0
3
1.0
-3.5
0
BZT52C4V3S
W6
4.3
4.0
4.6
5
90
600
1.0
3
1.0
-3.5
0
BZT52C4V7S
W7
4.7
4.4
5.0
5
80
500
1.0
3
2.0
-3.5
0.2
BZT52C5V1S
W8
5.1
4.8
5.4
5
60
480
1.0
2
2.0
-2.7
1.2
BZT52C5V6S
W9
5.6
5.2
6.0
5
40
400
1.0
1
2.0
-2.0
2.5
BZT52C6V2S
WA
6.2
5.8
6.6
5
10
150
1.0
3
4.0
0.4
3.7
BZT52C6V8S
WB
6.8
6.4
7.2
5
15
80
1.0
2
4.0
1.2
4.5
BZT52C7V5S
WC
7.5
7.0
7.9
5
15
80
1.0
1
5.0
2.5
5.3
BZT52C8V2S
WD
8.2
7.7
8.7
5
15
80
1.0
0.7
5.0
3.2
6.2
BZT52C9V1S
WE
9.1
8.5
9.6
5
15
100
1.0
0.5
6.0
3.8
7.0
BZT52C10S
WF
10
9.4
10.6
5
20
150
1.0
0.2
7.0
4.5
8.0
BZT52C11S
WG
11
10.4
11.6
5
20
150
1.0
0.1
8.0
5.4
9.0
BZT52C12S
WH
12
11.4
12.7
5
25
150
1.0
0.1
8.0
6.0
10.0
BZT52C13S
WI
13
12.4
14.1
5
30
170
1.0
0.1
8.0
7.0
11.0
BZT52C15S
WJ
15
13.8
15.6
5
30
200
1.0
0.1
10.5
9.2
13.0
BZT52C16S
WK
16
15.3
17.1
5
40
200
1.0
0.1
11.2
10.4
14.0
BZT52C18S
WL
18
16.8
19.1
5
45
225
1.0
0.1
12.6
12.4
16.0
BZT52C20S
WM
20
18.8
21.2
5
55
225
1.0
0.1
14.0
14.4
18.0
BZT52C22S
WN
22
20.8
23.3
5
55
250
1.0
0.1
15.4
16.4
20.0
BZT52C24S
WO
24
22.8
25.6
5
70
250
1.0
0.1
16.8
18.4
22.0
BZT52C27S
WP
27
25.1
28.9
2
80
300
0.5
0.1
18.9
21.4
25.3
BZT52C30S
WQ
30
28.0
32.0
2
80
300
0.5
0.1
21.0
24.4
29.4
BZT52C33S
WR
33
31.0
35.0
2
80
325
0.5
0.1
23.1
27.4
33.4
BZT52C36S
WS
36
34.0
38.0
2
90
350
0.5
0.1
25.2
30.4
37.4
BZT52C39S
WT
39
37.0
41.0
2
130
350
0.5
0.1
27.3
33.4
41.2
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
2. Tested with pulses, period=5ms, pulse width = 300μs.
3. f = 1KHz.
GUANGDONG HOTTECH
INDUSTRIAL CO,. LTD.
Page:P3-P2
Plastic-Encapsulate Diodes
BZT52C2V0S---BZT52C39S
Typical
Characteristics
GUANGDONG HOTTECH
INDUSTRIAL CO,. LTD.
Page:P3-P3