DMP2240UWQ P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary V(BR)DSS Features ID max TA = 25°C RDS(ON) max -20V 150mΩ @ VGS = -4.5V -1.5A 200mΩ @ VGS = -2.5V -1A -0.9A Description and Applications ideal for high efficiency power management applications. Backlighting Power Management Functions DC-DC Converters Low On-Resistance Very Low Gate Threshold Voltage VGS(th) ≤ 1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it Case: SOT-323 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Below Terminals: Finish Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.006 grams (Approximate) D ra in SOT-323 D G a te G S S o u rc e Top View Internal Schematic Top View Ordering Information (Note 5) Part Number DMP2240UWQ-7 Notes: Case SOT-323 Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information YM NEW PRODUCT 240mΩ @ VGS = -1.8V DMV Date Code Key Year Code Month Code 2014 B Jan 1 DMP2240UWQ Document number: DS37585 Rev. 1 - 2 2015 C Feb 2 Mar 3 DMV = Product Type Marking Code YM = Date Code Marking Y = Year (ex: B = 2014) M = Month (ex: 9 = September) 2016 D Apr 4 2017 E May 5 Jun 6 1 of 5 www.diodes.com 2018 F Jul 7 2019 G Aug 8 Sep 9 2020 H Oct O 2021 I Nov N Dec D November 2014 © Diodes Incorporated DMP2240UWQ Maximum Ratings (@TA = +25°C unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TA = +25°C TA = +70°C Drain Current (Note 6) Units V V IDM Value -20 ±12 -1.5 -1.0 -5 Symbol PD RJA TJ, TSTG Value 250 500 -55 to +150 Units mW °C/W °C ID Pulsed Drain Current A A NEW PRODUCT Thermal Characteristics Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current (@TA = +25°C unless otherwise specified.) TJ = +25°C TJ = +125°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage (Note 7) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit Test Condition BVDSS -20 V VGS = 0V, ID = -250A IDSS A VDS = -20V, VGS = 0V IGSS -1.0 -5.0 100 nA VGS = 12V, VDS = 0V VGS(th) -0.45 -1.0 V RDS (ON) 92 134 180 150 200 240 m gFS VSD 3.1 -0.9 S V VDS = VGS, ID = -250A VGS = -4.5V, ID = -2.0A VGS = -2.5V, ID = -1.5A VGS = -1.8V, ID = -0.5A VDS = -10V, ID = -810mA VGS = 0V, IS = -0.5A Ciss Coss Crss tD(on) tr tD(off) tf 320 80 60 12.5 10.3 46.5 22.2 pF pF pF ns ns ns ns VDS = -16V, VGS = 0V f = 1.0MHz VDS = -10V, VGS = -4.5V, RL = 10Ω, RG = 1.0Ω 6. Device mounted on FR-4 substrate PC board, 2oz. Copper, with minimum recommended pad layout. 7. Short duration pulse test used to minimize self-heating effect. VGS = -3.0V VDS = -10V VGS = -2.0V VGS = -1.8V VGS = -1.6V TA = 125°C VGS = -1.4V TA = 25°C VGS = -1.2V DMP2240UWQ Document number: DS37585 Rev. 1 - 2 VGS = -1.0V TA = -55°C 2 of 5 www.diodes.com November 2014 © Diodes Incorporated DMP2240UWQ TA = 25°C ID = 1.0A VGS = -2.5V VGS = -1.8V VGS = -4.5V VGS = -1.8V NEW PRODUCT VGS = -2.5V VGS = -4.5V VGS = -10V 0.30 600 VGS = -4.5V f = 1MHz 500 0.20 400 Ciss 300 TA = 150°C TA = 125°C 200 0.10 TA = 25°C Coss TA = -55°C 100 Crss 0.00 0 1 2 3 4 0 5 0.3 0 2 4 6 8 10 12 14 16 18 20 16 18 10,000 VGS = 0V 0.27 0.24 Tj = 150°C VGS = -1.8V ID = -200mA 0.21 0.18 VGS = -2.5V ID = -670mA 0.15 1,000 Tj = 125°C VGS = -4.5V ID = -950mA 0.12 0.09 0.06 0.03 0 -50 -25 0 25 DMP2240UWQ Document number: DS37585 Rev. 1 - 2 50 75 100 125 150 3 of 5 www.diodes.com 100 2 4 6 8 10 12 14 20 November 2014 © Diodes Incorporated DMP2240UWQ 1 VGS = 0V Tj = 25°C 0.8 0.6 NEW PRODUCT 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. H SOT323 Dim Min Max Typ A 0.25 0.40 0.30 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.650 BSC F 0.375 0.475 0.425 G 1.20 1.40 1.30 H 1.80 2.20 2.15 J 0.00 0.10 0.05 K 0.90 1.00 0.95 L 0.25 0.40 0.30 M 0.10 0.18 0.11 a 8°C All Dimensions in mm K M a D J L A C B G Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C X DMP2240UWQ Document number: DS37585 Rev. 1 - 2 Dimensions Value (in mm) Z 2.8 X 0.7 Y 0.9 C 1.9 E 1.0 E 4 of 5 www.diodes.com November 2014 © Diodes Incorporated DMP2240UWQ IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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