FDS4470 40V N-Channel PowerTrench® MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. • 12.5 A, 40 V. RDS(ON) = 9 mΩ @ VGS = 10 V • Low gate charge (45 nC) • High performance trench technology for extremely Applications low RDS(ON) • High power and current handling capability • DC/DC converter D D DD DD DD G SS G S SS S SO-8 Pin 1 SO-8 Absolute Maximum Ratings Symbol 5 4 6 3 7 2 8 1 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 40 V VGSS Gate-Source Voltage +30/–20 V ID Drain Current 12.5 A – Continuous (Note 1a) – Pulsed 50 Power Dissipation for Single Operation PD (Note 1a) 2.5 (Note 1b) 1.4 (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range W 1.2 –55 to +175 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4470 FDS4470 13’’ 12mm 2500 units ©2006 Fairchild Semiconductor Corporation FDS4470 Rev D1 (W) FDS4470 December 2006 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) EAS Drain-Source Avalanche Energy IAS Drain-Source Avalanche Current Single Pulse, VDD=40V, ID=12.5A 370 mJ 12.5 A Off Characteristics Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250 μA VGS = 0 V, ID = 250 μA, Referenced to 25°C Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V IGSSF Gate–Body Leakage, Forward VGS = 30 V, IGSSR Gate–Body Leakage, Reverse BVDSS ΔBVDSS ΔTJ IDSS On Characteristics 40 V 42 mV/°C 1 μA VDS = 0 V 100 nA VGS = –20 V, VDS = 0 V –100 nA (Note 2) ID = 250 μA VDS = VGS, ID = 250 μA, Referenced to 25°C 2 3.9 –8 5 6 9 9 14 V VGS(th) ΔVGS(th) ΔTJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 10 V, ID = 12.5 A 45 S VDS = 20 V, f = 1.0 MHz V GS = 0 V, 2659 pF 605 pF 298 pF VGS = 10 V, ID = 12.5 A VGS = 10 V, ID = 12.5 A,TJ=125°C mV/°C 25 mΩ A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge (Note 2) VDD = 20 V, VGS = 10 V, VDS = 20 V, VGS = 10 V ID = 1 A, RGEN = 6 Ω ID = 12.5 A, 14 25 ns 12 22 ns 37 59 ns 29 46 ns 45 63 nC 11.2 nC 11 nC FDS4470 Rev D1 (W) FDS4470 Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings IS trr Maximum Continuous Drain–Source Diode Forward Current (Note 2) Drain–Source Diode Forward VGS = 0 V, IS = 2.1 A Voltage Diode Reverse Recovery Time IF = 12.5 A, diF/dt = 100 A/µs Qrr Diode Reverse Recovery Charge VSD 0.7 2.1 1.2 A V 33 nS 39 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°C/W when 2 mounted on a 1in pad of 2 oz copper b) 105°C/W when 2 mounted on a .04 in pad of 2 oz copper c) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0% FDS4470 Rev D1 (W) FDS4470 Electrical Characteristics FDS4470 Typical Characteristics 2 80 VGS = 10V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 5.5V 70 ID, DRAIN CURRENT (A) 6.0V 60 5.0V 50 40 30 4.5V 20 10 0 0 0.5 1 1.5 2 VGS = 5.0V 1.8 1.6 5.5V 1.4 6.0V 1.2 7.0V 0 20 40 60 80 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 2 0.019 ID = 12.5A VGS = 10V 1.8 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 10V 0.8 2.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.6 1.4 1.2 1 0.8 0.6 0.4 ID = 6.3A 0.016 0.013 TA = 125oC 0.01 0.007 TA = 25oC 0.004 -50 -25 0 25 50 75 100 125 150 175 4 5 o 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation withTemperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 90 IS, REVERSE DRAIN CURRENT (A) VDS = 5V 75 ID, DRAIN CURRENT (A) 8.0V 1 60 45 TA = 125oC 30 25oC 15 -55oC VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 2.5 3.5 4.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5.5 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS4470 Rev D1 (W) FDS4470 Typical Characteristics 10 4000 VGS, GATE-SOURCE VOLTAGE (V) f = 1 MHz VGS = 0 V VDS = 10V ID = 12.5A 20V 8 3200 CAPACITANCE (pF) 30V 6 4 2 CISS 2400 1600 COSS 800 CRSS 0 0 0 10 20 30 40 50 0 10 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 40 50 P(pk), PEAK TRANSIENT POWER (W) 100μs 1ms 10ms RDS(ON) LIMIT 10 100ms 1s 10s 1 DC VGS = 10V SINGLE PULSE RθJA = 125oC/W 0.1 TA = 25oC 0.01 0.01 0.1 1 10 100 SINGLE PULSE RθJA = 125°C/W TA = 25°C 40 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 30 Figure 8. Capacitance Characteristics. 100 ID, DRAIN CURRENT (A) 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA 0.2 0.1 o RθJA = 125 C/W 0.1 0.05 P(pk) 0.02 0.01 t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS4470 Rev D1 (W) FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I22