APT50M75B2FLL
APT50M75LFLL
500V 57A 0.075Ω
POWER MOS 7
R
FREDFET
B2FLL
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
TO-264
LFLL
• Increased Power Dissipation
• Easier To Drive
• Popular T-MAX™ or TO-264 Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
T-MAX™
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT50M75B2FLL_LFLL
UNIT
500
Volts
Drain-Source Voltage
57
Continuous Drain Current @ TC = 25°C
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
570
Watts
Linear Derating Factor
4.56
W/°C
PD
TJ,TSTG
1
228
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
1
-55 to 150
°C
300
Amps
57
(Repetitive and Non-Repetitive)
1
Single Pulse Avalanche Energy
Volts
50
4
mJ
2500
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
500
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 28.5A)
TYP
MAX
UNIT
Volts
0.075
Ohms
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
9-2004
Characteristic / Test Conditions
050-7033 Rev C
Symbol
APT50M75B2FLL_LFLL
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
C iss
Test Conditions
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
C rss
Reverse Transfer Capacitance
f = 1 MHz
Qg
3
Total Gate Charge
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
RESISTIVE SWITCHING
VGS = 15V
VDD = 300V
tf
ID = 57A @ 25°C
Fall Time
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
6
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
INDUCTIVE SWITCHING @ 25°C
ns
755
VDD = 333V, VGS = 15V
725
ID = 57A, RG = 5Ω
6
nC
3
RG = 0.6Ω
Eon
UNIT
pF
85
125
33
65
8
19
21
ID = 57A @ 25°C
Turn-off Delay Time
MAX
5590
1180
VDD = 300V
Rise Time
td(off)
TYP
VGS = 10V
Qgs
tr
MIN
INDUCTIVE SWITCHING @ 125°C
µJ
1240
VDD = 333V VGS = 15V
ID = 57A, RG = 5Ω
845
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
(Body Diode)
228
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -57A)
1.3
Volts
dv/
Peak Diode Recovery
15
V/ns
dt
dv/
dt
57
5
t rr
Reverse Recovery Time
(IS = -57A, di/dt = 100A/µs)
Tj = 25°C
280
Tj = 125°C
600
Q rr
Reverse Recovery Charge
(IS = -57A, di/dt = 100A/µs)
Tj = 25°C
1.9
Tj = 125°C
5.7
IRRM
Peak Recovery Current
(IS = -57A, di/dt = 100A/µs)
Tj = 25°C
15
Tj = 125°C
23
Amps
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.22
RθJC
Junction to Case
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.9
0.7
0.15
0.5
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7033 Rev C
9-2004
0.25
0.1
0.3
Duty Factor D = t1/t2
0.1
0.05
0
t1
t2
0.05
10-5
Peak TJ = PDM x ZθJC + TC
SINGLE PULSE
10-4
°C/W
4 Starting Tj = +25°C, L = 1.54mH, RG = 25Ω, Peak IL = 57A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID57A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.2
UNIT
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
8V
15 &10V
RC MODEL
Power
(watts)
0.0144
0.00575F
0.0763
0.0186F
0.130
0.278F
ID, DRAIN CURRENT (AMPERES)
Junction
temp. (°C)
APT50M75B2FLL_LFLL
120
7.5V
100
7V
80
60
6.5V
40
6V
20
5.5V
Case temperature. (°C)
0
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
160
VDS> ID (ON) x RDS(ON) MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
120
100
80
60
40
TJ = +125°C
20
TJ = +25°C
0
1 2
3 4 5 6 7
8
9 10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
50
40
30
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
I
D
V
1.10
1.05
VGS=10V
VGS=20V
1.00
0.95
0.90
0
1.10
1.05
1.00
0.95
0.90
0.85
-50
= 10V
2.0
1.5
1.0
0.5
0.0
-50
20
40
60
80
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.2
= 28.5A
GS
D
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
2.5
NORMALIZED TO
= 10V @ I = 28.5A
GS
1.15
1.15
60
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
V
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, RDS(ON) vs. TEMPERATURE
1.1
1.0
0.9
0.8
9-2004
0
TJ = -55°C
1.2
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7033 Rev C
ID, DRAIN CURRENT (AMPERES)
140
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
10,000
100µS
10
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
100
I
D
VDS=100V
= 57A
VDS=250V
12
VDS=400V
8
4
0
100
TJ =+150°C
1
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
110
R
100
T = 125°C
td(off)
70
60
50
90
V
DD
R
G
= 333V
T = 125°C
J
L = 100µH
= 333V
DD
G
= 5Ω
J
L = 100µH
tf
70
60
50
tr
40
30
30
td(on)
20
10
10
1
10
50
60
70
80
90
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
20
V
DD
R
G
30
40
10
50 60
70 80
90
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
3500
= 333V
= 5Ω
J
Eon
E ON includes
diode reverse recovery
1500
1000
500
Eoff
20
I
DD
D
30
40
= 333V
= 57A
T = 125°C
J
L = 100µH
0
10
20
V
3000
T = 125°C
30
40
50
60
70
80 90
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
SWITCHING ENERGY (µJ)
2000
V
80
= 5Ω
40
2500
TJ =+25°C
10
90
tr and tf (ns)
td(on) and td(off) (ns)
200
120
20
SWITCHING ENERGY (µJ)
Crss
100
80
9-2004
100
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
40
80
120
160
200
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
050-7033 Rev C
Coss
1,000
10
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
Ciss
10mS
1
10
100
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
0
APT50M75B2FLL_LFLL
20,000
228
L = 100µH
E ON includes
2500
Eoff
diode reverse recovery
2000
Eon
1500
1000
500
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT50M75B2FLL_LFLL
90 %
Gate Voltage
10 %
Gate Voltage
T J = 125 C
t d(on)
t d(off)
Drain Current
tf
TJ = 125 C
Drain Voltage
90%
90%
tr
5%
5%
0
Drain Voltage
10%
10%
Switching Energy
Drain Current
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT60DF60
V DS
ID
V DD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
9-2004
4.50 (.177) Max.
25.48 (1.003)
26.49 (1.043)
050-7033 Rev C
Drain
Drain
20.80 (.819)
21.46 (.845)