MOSFET SMD Type N-Channel MOSFET FDV303N (KDV303N) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ■ Features 1 ● RDS(ON) ＜ 450mΩ (VGS = 4.5V) 0.55 ● ID = 0.68 A +0.1 1.3 -0.1 +0.1 2.4 -0.1 ● VDS (V) = 25V 0.4 3 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 +0.05 0.1 -0.01 +0.1 0.97 -0.1 ● RDS(ON) ＜ 600mΩ (VGS = 2.7V) D 1.Gate 0-0.1 G +0.1 0.38 -0.1 2.Source 3.Drain S ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Drain-Source Voltage Parameter VDS 25 Gate-Source Voltage VGS ±8 Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) ESD 6 Continuous Drain Current ID 0.68 Pulsed Drain Current IDM 2 Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range Unit V KV A PD 350 mW RthJA 357 ℃/W TJ 150 Tstg -55 to 150 ℃ www.kexin.com.cn 1 MOSFET SMD Type N-Channel MOSFET FDV303N (KDV303N) ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Symbol VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS Gate Threshold Voltage Static Drain-Source On-Resistance (Note.1) On State Drain Current Forward Transconductance VGS(th) Test Conditions Typ RDS(On) 1 VDS=20V, VGS=0V, TJ=55℃ 10 VDS=0V, VGS=±8 V 0.65 VDS=VGS , ID=250μA VGS=4.5V, ID=0.5A gFS Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss nA 1.5 V 450 800 TJ=125℃ VGS=2.7V, VDS=5V (Note.1) VDS=5V, ID=0.5A (Note.1) A 1.45 S 50 VGS=0V, VDS=10V, f=1MHz pF 28 9 1.64 2.3 Qg Qgs Gate Drain Charge Qgd Turn-On DelayTime td(on) 3 6 Turn-On Rise Time tr 8.5 18 Turn-Off DelayTime td(off) 17 30 Maximum Body-Diode Continuous Current IS VSD VGS=4.5V, VDS=5V, ID=0.5A (Note.1) VGS=4.5V, VDS=6V,ID=0.5A,RG=50Ω (Note.1) IS=0.5A,VGS=0V Note.1: Pulse Test: Pulse Width < 300us, Duty Cycle < 2.0%. ■ Marking Marking 303 www.kexin.com.cn mΩ 600 0.5 Total Gate Charge tf μA ±100 Gate Source Charge Turn-Off Fall Time Unit V VDS=20V, VGS=0V VGS=2.7V, ID=0.2A ID(ON) Max 25 ID=250μA, VGS=0V VGS=4.5V, ID=0.5A Input Capacitance Diode Forward Voltage 2 Min nC 0.38 0.45 13 ns 25 0.3 A 1.2 V MOSFET SMD Type N-Channel MOSFET FDV303N (KDV303N) 1.5 VGS = 4.5V 3.5 3.0 2.7 1.2 2 2.5 R DS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) ■ Typical Characterisitics 2.0 0.9 0.6 1.5 0.3 0 0 0.5 1 1.5 VGS = 2.0V 1.5 0 0.2 0.4 0.6 0.8 1 2 ID= 0.5A I D =0.5 A R DS(on) , ON-RESISTANCE (OHM) VGS = 4.5 V 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 150 Figure 3. On-Resistance Variation IS , REVERSE DRAIN CURRENT (A) 25°C 125°C 0.6 0.4 0.2 0 0 0.5 1 1.5 1.2 0.8 125°C 25°C 0.4 0 1 1.5 2 2.5 3 3.5 4 VGS , GATE TO SOURCE VOLTAGE (V) 4.5 5 Gate-To- Source Voltage. T = -55°C J V DS = 5.0V 0.8 1.6 Figure 4. On Resistance Variation with with Temperature. 1 1.2 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 R DS(ON), NORMALIZED 3.5 I D , DRAIN CURRENT (A) Figure 1. On-Region Characteristics. DRAIN-SOURCE ON-RESISTANCE 3.0 4.5 VDS , DRAIN-SOURCE VOLTAGE (V) ID , DRAIN CURRENT (A) 2.7 1 0.5 2 2.5 2 VGS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2.5 1 V GS = 0V 0.1 TJ = 125°C 25°C -55°C 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.kexin.com.cn 3 MOSFET SMD Type N-Channel MOSFET FDV303N (KDV303N) ■ Typical Characterisitics 5 V GS , GATE-SOURCE VOLTAGE (V) 150 VDS = 5V I D = 0.5A 100 10V 4 CAPACITANCE (pF) 15V 3 2 0 Coss 20 10 1 Ciss 50 f = 1 MHz V GS = 0V 5 0.1 0 0.4 0.8 1.2 1.6 0.5 2 V DS Q g , GATE CHARGE (nC) 2 5 10 25 5 5 1m 3 10 0.3 10 0.1 DC V GS = 4.5V SINGLE PULSE R θJA =357°C/W TA = 25°C 0.03 0.2 0.5 0m s SINGLE PULSE R θJA =357° C/W T A = 25°C 4 s POWER (W) 10m IT LIM N) (O S RD 1 0.01 0.1 s 1s s 3 2 1 1 2 5 10 20 0 0.001 40 0.01 Figure 9. Maximum Safe Operating Area. 1 10 100 Figure 10. Single Pulse Maximum Power Dissipation. . r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.1 SINGLE PULSE TIME (SEC) VDS , DRAI N-SOURCE VOLTAGE (V) 1 0.5 D = 0.5 0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.02 0.01 R θJA (t) = r(t) * R θJA R θJA = 357 °C/W P(pk) 0.01 0.005 t1 Single Pulse 0.001 0.01 0.1 1 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. www.kexin.com.cn t2 TJ - TA = P * R θJA(t) Duty Cycle, D = t1 /t2 0.002 0.001 0.0001 4 1 , DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics. Figure 7. Gate Charge Characteristics. I D , DRAIN CURRENT (A) C rss 10 100 300 300