CM300DU-24NFH Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTMOD™ NFH-Series Module 300 Amperes/1200 Volts A D S S K K K V L (4 PLACES) Q M (3 PLACES) G G2 E2 B E H E1 C2E1 C1 E2 G1 G N J AA Q Z F F Q P X V Q P Y T P U S C W LABEL R G2 E2 C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches Dimensions Inches Millimeters A 4.25 108.0 P 0.71 18.0 2.44 62.0 Q 0.28 R 0.874 B C Millimeters 1.14+0.04/-0.02 29.0+1.0/-0.5 7.0 22.2 D 3.66±0.01 93.0±0.25 S 0.30 7.5 E 1.89±0.01 48.0±0.25 T 0.94 24.0 F 0.98 25.0 U 0.11 2.8 G 0.24 6.0 V 0.16 4.0 H 0.59 15.0 W 0.33 8.5 J 0.7854 19.95 X 0.46 11.75 Description: Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low ESW(off) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ Power Supplies £ Induction Heating £ Welders K 0.55 14.0 Y 0.012 ~ 0 L 0.26 Dia. 6.5 Dia. Z 0.85 21.5 Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM300DU-24NFH is a 1200V (VCES), 300 Ampere Dual IGBTMOD™ Power Module. M M6 Metric M6 AA 0.69 17.5 Type Current Rating Amperes VCES Volts (x 50) CM 300 24 N 7/11 Rev. 1 1.022 0.3 ~ 0 25.95 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM300DU-24NFH Dual IGBTMOD™ NFH-Series Module 3 00 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM300DU-24NF Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 1200 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts IC 300* Amperes ICM 600* Amperes Collector Current (TC = 25°C) Peak Collector Current Emitter Current** (TC = 25°C) Peak Emitter Current** IE 300* Amperes IEM 600* Amperes Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) PC 1130 Watts Maximum Collector Dissipation (TC' = 25°C, Tj' ≤ 150°C) PC 1900 Watts Mounting Torque, M6 Main Terminal — 40 in-lb Mounting Torque, M6 Mounting — 40 in-lb — 400 Grams VISO 2500 Volts Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 1.0 µA Gate-Emitter Threshold Voltage VGE(th) IC = 30mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 300A, VGE = 15V, Tj = 25°C — 5.0 6.5 Volts IC = 300A, VGE = 15V, Tj = 125°C — 5.0 — Volts Total Gate Charge QG VCC = 600V, IC = 300A, VGE = 15V — 1360 — nC Emitter-Collector Voltage** VEC IE = 300A, VGE = 0V — — 3.5 Volts Min. Typ. Max. Units — — 47 nf — — 4.0 nf — — 0.9 nf Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Inductive Turn-on Delay Time td(on) Load Rise Time Switch Turn-off Delay Time Time Fall Time Test Conditions VCE = 10V, VGE = 0V — — 300 ns VCC = 600V, IC = 300A, — — 80 ns td(off) VGE1 = VGE2 = 15V, RG = 1.0Ω, — — 500 ns tf Inductive Load Switching Operation, — — 150 ns Diode Reverse Recovery Time** trr IE = 300A — — 250 ns Diode Reverse Recovery Charge** Qrr — 13 — µC tr * Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 7/11 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM300DU-24NFH Dual IGBTMOD™ NFH-Series Module 300 Amperes/1200 Volts Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module, TC Reference — — 0.11 °C/W Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module, TC Reference — — 0.18 °C/W Thermal Resistance, Junction to Case Rth(j-c)'Q — — 0.066 °C/W Thermal Resistance, Junction to Case Rth(j-c)'D Per FWDi 1/2 Module, — — 0.1 °C/W Rth(c-f) Per 1/2 Module, Thermal Grease Applied — 0.04 — °C/W 1.0 — 10 Ω Point per Outline Drawing Point per Outline Drawing Per IGBT 1/2 Module, TC Reference Point Under Chips TC Reference Point Under Chips Contact Thermal Resistance External Gate Resistance RG OUTPUT CHARACTERISTICS (TYPICAL) 300 11 200 10 100 9 0 8 0 4 6 8 500 400 300 200 100 0 10 5 0 15 10 7 6 5 4 3 2 1 0 20 VGE = 15V Tj = 25°C Tj = 125°C 8 100 0 200 300 400 500 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 IC = 600A 8 6 IC = 300A 4 IC = 120A 2 600 102 Tj = 25°C Tj = 125°C Tj = 25°C CAPACITANCE, Cies, Coes, Cres, (nF) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 2 9 VGE = 10V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 12 400 EMITTER CURRENT, IE, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 13 15 500 600 14 VGE = 20V Tj = 25°C COLLECTOR CURRENT, IC, (AMPERES) 600 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 102 Cies 101 Coes 100 Cres VGE = 0V 0 6 8 10 12 14 16 18 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 7/11 Rev. 1 20 101 0 1 2 3 4 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 5 10-1 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM300DU-24NFH Dual IGBTMOD™ NFH-Series Module 3 00 Amperes/1200 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) tr VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive Load SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 100 101 102 101 102 102 VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 25°C Inductive Load 101 101 103 VCC = 600V 12 8 4 0 0 400 800 1200 1600 2000 SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT (TYPICAL) 102 103 102 102 VCC = 600V VGE = ±15V IC = 300A Tj = 125°C Inductive Load C Snubber at Bus ESW(on) ESW(off) 101 100 100 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) 101 VCC = 600V VGE = ±15V IE = 300A Tj = 125°C Inductive Load C Snubber at Bus GATE RESISTANCE, RG, (Ω) 100 10-1 Err 101 102 102 10-2 10-3 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 10-2 10-1 100 Err 101 100 101 VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive Load C Snubber at Bus 102 103 EMITTER CURRENT, IE, (AMPERES) GATE RESISTANCE, RG, (Ω) 102 REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) VCC = 400V GATE CHARGE, QG, (nC) REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) 4 16 EMITTER CURRENT, IE, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 100 100 101 103 102 IC = 300A COLLECTOR CURRENT, IC, (AMPERES) VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive Load C Snubber at Bus ESW(on) ESW(off) 100 101 102 REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) 101 Irr trr 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) REVERSE RECOVERY TIME, trr, (ns) tf 102 SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) SWITCHING TIME, (ns) td(off) td(on) GATE CHARGE VS. VGE 103 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 103 103 101 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.11°C/W (IGBT) Rth(j-c) = 0.18°C/W (FWDi) 10-2 10-5 10-4 10-3 10-3 TIME, (s) 7/11 Rev. 1