SRAM Austin Semiconductor, Inc. 512K x 8 SRAM AS5LC512K8 PIN ASSIGNMENT (Top View) 3.3 VOLT HIGH SPEED SRAM with CENTER POWER PINOUT 36-Pin PSOJ (DJ) 36-Pin CLCC (EC) AVAILABLE AS MILITARY SPECIFICATIONS •MIL-STD-883 for Ceramic •Extended Temperature Plastic (COTS) FEATURES • Ultra High Speed Asynchronous Operation • Fully Static, No Clocks • Multiple center power and ground pins for improved noise immunity • Easy memory expansion with CE\ and OE\ options • All inputs and outputs are TTL-compatible • Single +3.3V Power Supply +/- 0.3V 36-Pin Flat Pack (F) • Data Retention Functionality Testing • Cost Efficient Plastic Packaging • Extended Testing Over -55ºC to +125ºC for plastics OPTIONS MARKING • Timing 12ns access 15ns access 20ns access 25ns access -12 -15 -20 -25 • Operating Temperature Ranges Military (-55oC to +125oC) Industrial (-40oC to +85oC) XT IT • Package(s) Ceramic Flatpack Plastic SOJ (400 mils wide) Ceramic LCC F DJ EC • 2V data retention/low power L GENERAL DESCRIPTION No. 307 The AS5LC512K8 is a 3.3V high speed SRAM. It offers flexibility in high-speed memory applications, with chip enable (CE\) and output enable (OE\) capabilities. These features can place the outputs in High-Z for additional flexibility in system design. Writing to these devices is accomplished when write enable (WE\) and CE\ inputs are both LOW. Reading is accomplished when WE\ remains HIGH and CE\ and OE\ go LOW. As a option, the device can be supplied offering a reduced power standby mode, allowing system designers to meet low standby power requirements. This device operates from a single +3.3V power supply and all inputs and outputs are fully TTL-compatible. The AS5LC512K8DJ offers the convenience and reliability of the AS5LC512K8 SRAM and has the cost advantage of a plastic encapsulation. No. 210 For more products and information please visit our web site at www.austinsemiconductor.com AS5LC512K8 Rev. 2.1 08/09 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 1 SRAM AS5LC512K8 Austin Semiconductor, Inc. FUNCTIONAL BLOCK DIAGRAM GND I/O CONTROLS DQ8 ROW DECODER A0-A18 INPUT BUFFER VCC 4,194,304-BIT MEMORY ARRAY 1024 ROWS X 4096 COLUMNS DQ1 CE\ OE\ COLUMN DECODER WE\ *POWER DOWN *On the low voltage Data Retention option. PIN FUNCTIONS TRUTH TABLE MODE OE\ CE\ WE\ STANDBY X H X READ L L H NOT SELECTED H L H WRITE X L L I/O HIGH-Z Q HIGH-Z D POWER STANDBY ACTIVE ACTIVE ACTIVE X = Don’t Care AS5LC512K8 Rev. 2.1 08/09 A0 - A18 Address Inputs WE\ Write Enable CE\ Chip Enable OE\ Output Enable I/O0 - I/O7 Data Inputs/Outputs VCC Power VSS Ground NC No Connection Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 2 SRAM AS5LC512K8 Austin Semiconductor, Inc. ABSOLUTE MAXIMUM RATINGS* *Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. ** Junction temperature depends upon package type, cycle time, loading, ambient temperature and airflow, and humidity. Voltage on Vcc Supply Relative to Vss Vcc .........................................................................-.5V to 4.6V Storage Temperature .....................................-65°C to +150°C Short Circuit Output Current (per I/O)…........................20mA Voltage on any Pin Relative to Vss........................-.5V to 4.6V Maximum Junction Temperature**..............................+150°C Power Dissipation ................................................................1W ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (-55oC < TA < +125oC & -40oC < TA < +85oC ; Vcc = 3.3V +0.3%) MAX DESCRIPTION CONDITIONS SYM -12 -15 -20 -25 UNITS NOTES ICCSP 80 70 60 55 ICCLP 60 50 40 35 mA ISBTSP 20 20 20 20 mA ISBTLP 15 15 15 15 mA ISBCSP 15 15 15 15 mA ISBCLP 9 9 9 9 mA CE\ < VIL; Vcc = MAX f = MAX = 1/t RC Outputs Open Power Supply Current: Operating "L" Version Only CE\ > VIH, All other inputs < VIL, Vcc = MAX, f = 0, Outputs Open Power Supply Current: Standby "L" Version Only CE\ > Vcc -0.2V; Vcc = MAX VIN<Vss +0.2V or mA 3, 2 VIN>Vcc -0.2V; f = 0 "L" Version Only " " " " # $#%& ' ( )! ' )! μ! μ! ( * CAPACITANCE PARAMETER Input Capacitance Output Capactiance AS5LC512K8 Rev. 2.1 08/09 CONDITIONS SYMBOL MAX UNITS NOTES CI 9 pF 4 Co 6 pF 4 o TA = 25 C, f = 1MHz VIN = 0 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 3 SRAM AS5LC512K8 Austin Semiconductor, Inc. ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (-55oC < TA < +125oC or -40oC to +85oC; Vcc = 3.3V +0.3%) DESCRIPTION SYM -12 MIN -15 MIN MAX -20 MAX MIN -25 MAX MIN MAX UNITS NOTES READ CYCLE Read Cycle Time tRC Address Access Time tAA Chip Enable Access Time tACE Output Hold From Address Change tOH 2 2 2 2 Chip Enable to Output in Low-Z tLZCE 2 2 2 2 ns 4, 6, 7 Chip Disable to Output in High-Z tHZCE 6 7 8 9 ns 4, 6, 7 Output Enable Acess Time tAOE 6 7 8 9 ns Output Enable to Output in Low-Z tLZOE Output Disable to Output in High-Z WRITE CYCLE WRITE Cycle Time tHZOE 12 15 12 20 15 12 15 0 0 6 25 20 20 0 7 ns 25 ns 25 ns ns 0 8 9 ns 4, 6, 7 ns 4, 6, 7 tWC 12 15 20 25 ns Chip Enable to End of Write tCW 8 10 12 13 ns Address Valid to End of Write tAW 8 10 12 13 ns Address Setup Time tAS 0 0 0 0 ns Address Hold From End of Write tAH 0 0 0 0 ns WRITE Pulse Width tWP 10 12 15 15 ns Data Setup Time tDS 6 7 8 8 ns Data Hold Time tDH 1 1 1 1 ns Write Disable to Output in Low-Z tLZWE 2 2 2 2 ns 4, 6, 7 Write Enable to Output in High-Z tHZWE 5 6 7 7 ns 4, 6, 7 AS5LC512K8 Rev. 2.1 08/09 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 4 SRAM AS5LC512K8 Austin Semiconductor, Inc. AC TEST CONDITIONS Input pulse levels ...................................................... Vss to 3.0V Input rise and fall times ......................................................... 3ns Input timing reference levels ............................................... 1.5V Output reference levels ........................................................ 1.5V Output load ................................................. See Figures 1 and 2 3.3V RL = 50Ω Q ZO=50Ω 319Ω VL = 1.5V Q 30 pF 5 pF 353Ω Fig. 1 Output Load Equivalent Fig. 2 Output Load Equivalent NOTES 1. All voltages referenced to VSS (GND). 2. ICC limit shown is for absolute worst case switching of ADDR, ADDR\, ADDR, etc. 3. ICC is dependent on output loading and cycle rates. 4. This parameter is guaranteed but not tested. 5. Test conditions as specified with the output loading as shown in Fig. 1 unless otherwise noted. 6. tLZCE, tLZWE, tLZOE, t HZCE, tHZOE and tHZWE are specified with CL = 5pF as in Fig. 2. Transition is measured ±200mV from steady state voltage. 7. At any given temperature and voltage condition, t HZCE is less than tLZCE, and tHZWE is less than t LZWE. 8. WE\ is HIGH for READ cycle. 9. 10. 11. 12. 13. 14. 15. Device is continuously selected. Chip enables and output enables are held in their active state. Address valid prior to, or coincident with, latest occurring chip enable. t RC = Read Cycle Time. Chip enable and write enable can initiate and terminate a WRITE cycle. Output enable (OE\) is inactive (HIGH). Output enable (OE\) is active (LOW). ASI does not warrant functionality nor reliability of any product in which the junction temperature exceeds 150°C. Care should be taken to limit power to acceptable levels. DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only) DESCRIPTION Vcc for Retention Data Data Retention Current CONDITIONS CE\ > VCC -0.2V VIN > VCC -0.2 or 0.2V Vcc = 2.0V Chip Deselect to Data Operation Recovery Time AS5LC512K8 Rev. 2.1 08/09 SYM MIN VDR 2 MAX NOTES V 6.5 ICCDR UNITS mA tCDR 0 ns 4 tR 20 ms 4, 11 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 5 SRAM AS5LC512K8 Austin Semiconductor, Inc. LOW VCC DATA RETENTION WAVEFORM DATA RETENTION MODE VCC 4.5V 4.5V VDR > 2V tR t CDR 123456789012345 1234 VIH- 123456 123456789012345 1234 123456 CE\ VIL- 123456 123456789012345 1234 123456 1234 123456789012345 123456 1234 123456789012345 123456 123456789012345 1234 123456 1234 123456789012345 123456 1234 123456789012345 123456789012345 1234567 12345 123456789012345 1234567 12345 123456789012345 1234567 12345 1234567 12345 123456789012345 1234567 12345 123456789012345 123456789012345 1234567 12345 1234567 12345 123456789012345 1234567 12345 123456789012345 VDR READ CYCLE NO. 11, 2 (Address Controlled, CE\ = OE\ = VIL, WE\ = VIH) t RC ADDRESS VALID tOH I/O, DATA IN & OUT Previous Data Valid tAA 1234567 12345678901 12 1234567 12 1234567 12345678901 12 1234567 12 12345678901 1234567 12 1234567 12 1234567 12345678901 12 1234567 12 12345678901 1234567 12 1234567 12 12345678901 1234567 12 1234567 Data Valid READ CYCLE NO. 2 (WE\ = VIH) t RC ADDRESS t AOE t HZOE t LZOE CE\ t LZCE t ACE I/O, DATA IN & OUT High-Z 1234567 112345 1234567 11 1234567 112345 1234567 1234567 112345 1234567 11 1234567 12345 1 1234567 1234567 112345 1234567 11 1234567 112345 1234567 t HZCE Data Valid t PU t PD Icc NOTES: 1. WE\ is HIGH for READ cycle. 2. Device is continuously selected. Chip enables and output enables are held in their active state. AS5LC512K8 Rev. 2.1 08/09 1234 1234 1234 Don’t Care 1234 1234 123456 123456 123456 123456 123456 Undefined Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 6 SRAM AS5LC512K8 Austin Semiconductor, Inc. WRITE CYCLE NO. 11 (CE Controlled) t WC ADDRESS t AW t AS tAH t CW CE\ 12345678901234567890123456 123456789012345678901234 1234567890 12345678901234567890123456 123456789012345678901234 1234567890 123456789012345678901234 1234567890 WE\12345678901234567890123456 12345678901234567890123456 123456789012345678901234 1234567890 123456 123456789012345678 123456 123456789012345678 123456789012345678 123456 123456789012345678 123456 t WP1 tDH t DS Data Valid I/O, DATA IN I/O, DATA OUT High-Z High-Z WRITE CYCLE NO. 21, 2 (Write Enabled Controlled) t WC ADDRESS t AW 123456789012345678901 12345678901234567890 1234567890 12345678901234567890 123456789012345678901 1234567890 123456789012345678901 12345678901234567890 1234567890 CE\ 123456789012345678901 12345678901234567890 1234567890 123456789012345678901 12345678901234567890 1234567890 t AS WE\ 123456 123456 123456 123456 123456 t CW 1234567 123456789012345 t A H12345678901234567 1234567 12345678901234567 123456789012345 1234567 12345678901234567 123456789012345 1234567 12345678901234567 123456789012345 1234567 12345678901234567 123456789012345 t WP1 tDH Data Valid I/O, DATA IN I/O, DATA OUT High-Z High-Z NOTES: 1. 2. Chip enable and write enable can initiate and terminate a WRITE cycle. Output enable (OE\) is inactive (HIGH). AS5LC512K8 Rev. 2.1 08/09 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 7 SRAM AS5LC512K8 Austin Semiconductor, Inc. WRITE CYCLE NO. 31, 2, 3 (WE Controlled) t WC ADDRESS t AW 1234567890123456789012 123456789012345678901 123456789 123456789012345678901 1234567890123456789012 123456789 123456789012345678901 123456789 CE\1234567890123456789012 1234567890123456789012 123456789012345678901 123456789 t AS WE\ 123456 123456 123456 123456 tAH 1234567 12345678901234567 1234567890123456 1234567 12345678901234567 1234567890123456 1234567 12345678901234567 1234567890123456 12345678901234567 1234567890123456 1234567 t CW t WP2 tDH t DS Data Valid DATA IN t HZWE DATA OUT t LZWE High-Z Data Undefined NOTES: 1. At any given temperature and voltage condition, tHZCE is less than tLZCE, and tHZWE is less than tLZWE. 2. Chip enable and write enable can initiate and terminate a WRITE cycle. 3. Output enable (OE\) is active (LOW). AS5LC512K8 Rev. 2.1 08/09 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 8 SRAM AS5LC512K8 Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #307 (Package Designator F) E L Pin 1 identifier area 12345678 12345678 12345678 12345678 12345678 12345678 12345678 12345678 36 1 e D b D1 Bottom View S Top View A c Q E2 SYMBOL A b c D D1 E E2 e L Q ASI SPECIFICATIONS MIN MAX 0.096 0.125 0.015 0.022 0.003 0.009 0.910 0.930 0.840 0.860 0.505 0.515 0.385 0.397 0.050 BSC 0.250 0.370 0.020 0.045 *All measurements are in inches. AS5LC512K8 Rev. 2.1 08/09 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 9 SRAM Austin Semiconductor, Inc. AS5LC512K8 MECHANICAL DEFINITIONS* Package Designator DJ SYMBOL A A1 A2 B b C D E E1 E2 e ASI SPECIFICATIONS MIN MAX 0.128 0.148 0.025 --0.082 --0.015 0.020 0.026 0.032 0.007 0.013 0.920 0.930 0.435 0.445 0.395 0.405 0.370 BSC 0.050 BSC *All measurements are in inches. AS5LC512K8 Rev. 2.1 08/09 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 10 SRAM AS5LC512K8 Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #210 (Package Designator EC) P A Pin 1 identifier area 1234567 1234567 1234567 1234567 1234567 1234567 1234567 1234567 1234567 1234567 R L2 1 D 36 L e B D1 E A1 SYMBOL A A1 B D D1 E e L L2 P R ASI SPECIFICATIONS MIN MAX 0.080 0.100 0.054 0.066 0.022 0.028 0.910 0.930 0.840 0.860 0.445 0.460 0.050 BSC 0.100 TYP 0.115 0.135 --0.006 0.009 TYP *All measurements are in inches. AS5LC512K8 Rev. 2.1 08/09 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 11 SRAM AS5LC512K8 Austin Semiconductor, Inc. ORDERING INFORMATION EXAMPLE: AS5LC512K8F-12L/XT Device Number AS5LC512K8 AS5LC512K8 AS5LC512K8 AS5LC512K8 Package Type F F F F Speed ns -12 -15 -20 -25 Options** Process L L L L /* /* /* /* Options** Process L L L L /* /* /* /* Options** Process L L L L /* /* /* /* EXAMPLE: AS5LC512K8DJ-20L/883C Device Number AS5LC512K8 AS5LC512K8 AS5LC512K8 AS5LC512K8 Package Type DJ DJ DJ DJ Speed ns -12 -15 -20 -25 EXAMPLE: AS5LC512K8EC-15L/IT Device Number AS5LC512K8 AS5LC512K8 AS5LC512K8 AS5LC512K8 Package Type EC EC EC EC Speed ns -12 -15 -20 -25 *AVAILABLE PROCESSES IT = Industrial Temperature Range XT = Extended Temperature Range 883C = Full Military Processing1 -40oC to +85oC -55oC to +125oC -55oC to +125oC **OPTIONS DEFINITIONS L = 2V Data Retention / Low Power NOTES: AS5LC512K8 Rev. 2.1 08/09 1. 883C process available with ceramic packaging only. Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 12 SRAM Austin Semiconductor, Inc. AS5LC512K8 DOCUMENT TITLE 512K x 8 SRAM 3.3 VOLT HIGH SPEED SRAM with CENTER POWER PINOUT Rev # 2.1 AS5LC512K8 Rev. 2.1 08/09 History Pg 1: Changed 0.3% to 0.3V Release Date August 2009 Status Release Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 13