AP2030SD
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH BVDSS
D2
D2
▼ Low On-resistance
20V
RDS(ON)
D1
D1
▼ Fast Switching
60mΩ
ID
G2
P-CH BVDSS
S2
PDIP-8
G1
S1
Description
2.6A
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
-20V
RDS(ON)
80mΩ
ID
-2.3A
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Units
P-channel
20
-20
V
±12
±12
V
Continuous Drain Current
3
2.6
-2.3
A
Continuous Drain Current
3
2.1
-1.8
A
15
-10
A
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
Linear Derating Factor
2
W
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
62.5
℃/W
200728042
AP2030SD
o
N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
20
-
-
V
-
0.037
-
V/℃
VGS=4.5V, ID=2.6A
-
-
60
mΩ
VGS=2.5V, ID=1.8A
-
-
90
mΩ
0.5
-
1.2
V
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=5V, ID=2.6A
-
3.6
-
S
IDSS
Drain-Source Leakage Current (Tj=25oC)
VDS=20V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=16V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±12V
-
-
±100
nA
ID=2.6A
-
9
-
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=10V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4
-
nC
2
td(on)
Turn-on Delay Time
VDS=10V
-
6.5
-
ns
tr
Rise Time
ID=1A
-
14
-
ns
td(off)
Turn-off Delay Time
RG=6Ω,VGS=4.5V
-
20
-
ns
tf
Fall Time
RD=10Ω
-
15
-
ns
Ciss
Input Capacitance
VGS=0V
-
300
-
pF
Coss
Output Capacitance
VDS=8V
-
255
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
115
-
pF
Min.
Typ.
VD=VG=0V , VS=1.2V
-
-
1.7
A
Tj=25℃, IS=1.7A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
IS
VSD
Parameter
Continuous Source Current ( Body Diode )
Forward On Voltage
2
Test Conditions
Max. Units
AP2030SD
o
P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
-20
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, I D=-1mA
-
-0.037
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-4.5V, I D=-2.2A
-
-
80
mΩ
VGS=-2.5V, I D=-1.8A
-
-
135
mΩ
VGS=0V, ID=250uA
VGS(th)
Gate Threshold Voltage
VDS=VGS, I D=-250uA
-0.5
-
-1
V
gfs
Forward Transconductance
VDS=-5V, ID=-2.2A
-
2.7
-
S
VDS=-20V, VGS=0V
-
-
-1
uA
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
Drain-Source Leakage Current (Tj=150oC)
VDS=-16V, VGS=0V
-
-
-25
uA
IGSS
Gate-Source Leakage
VGS=±12V
-
-
±100
nA
Qg
Total Gate Charge
ID=-2.2A
-
11.5
-
nC
Qgs
Gate-Source Charge
VDS=-6V
-
3.2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
1.5
-
nC
VDS=-10V
-
-
10
ns
2
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-2.2A
-
-
25
ns
td(off)
Turn-off Delay Time
RG=6Ω,VGS=-4.5V
-
-
50
ns
tf
Fall Time
RD=4.5Ω
-
-
30
ns
Ciss
Input Capacitance
VGS=0V
-
940
-
pF
Coss
Output Capacitance
VDS=-15V
-
440
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
130
-
pF
Source-Drain Diode
Min.
Typ.
Max.
IS
Symbol
Continuous Source Current ( Body Diode )
Parameter
VD=VG=0V , VS=-1.2V
Test Conditions
-
-
-1.7
Units
A
VSD
Forward On Voltage2
Tj=25℃, I S=-1.8A, VGS=0V
-
-0.75
-1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Mounted on 1 in2 copper pad of FR4 board ; 90℃/W when mounted on Min. copper pad.
AP2030SD
N-Channel
25
25
4.5V
4.0V
20
3.5V
ID , Drain Current (A)
ID , Drain Current (A)
20
4.5V
3.5V
15
3,0V
10
5
V GS =2.5V
3.0V
15
10
2.5V
5
V GS =2. 0 V
o
T C =150 o C
T C =25 C
0
0
0
1
2
3
4
5
6
0
1
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
3
4
5
6
Fig 2. Typical Output Characteristics
70
1.8
I D =2.6A
T C =25 ℃
65
1.6
Normalized R DS(ON)
60
RDS(ON) (mΩ )
2
V DS , Drain-to-Source Voltage (V)
55
50
45
I D =2.6A
V GS =4.5V
1.4
1.2
1.0
0.8
40
0.6
2
3
4
5
V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
AP2030SD
N-Channel
3
2.4
1.8
PD (W)
ID , Drain Current (A)
2
1.2
1
0.6
0
0
25
50
75
100
125
T c , Case Temperature (
o
150
0
50
100
T c ,Case Temperature (
C)
Fig 5. Maximum Drain Current v.s.
o
150
C)
Fig 6. Typical Power Dissipation
Case Temperature
100
1
Normalized Thermal Response (R thja)
Duty Factor = 0.5
10
1ms
ID (A)
10ms
1
100ms
1s
10s
DC
0.1
T C =25 o C
Single Pulse
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
Single Pulse
t
T
Duty Factor = t/T
Peak Tj = P DM x Rthja + Ta
Rthja=90oC/W
0.01
0.1
1
10
100
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS (V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
AP2030SD
N-Channel
6
I D =2.6A
V DS =10V
5
VGS , Gate to Source Voltage (V)
f=1.0MHz
1000
Ciss
C (pF)
4
3
Coss
100
Crss
2
1
0
0
2
4
6
8
10
10
12
1
5
9
13
17
21
25
29
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
1.5
100
10
1
T j =25 o C
1
VGS(th) (V)
IS(A)
T j =150 o C
0.5
0.1
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
1.5
0
-50
0
50
100
T j ,Junction Temperature ( o C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
150
AP2030SD
N-Channel
VDS
90%
RD
VDS
D
0.5x RATED VDS
G
RG
TO THE
OSCILLOSCOPE
+
10%
VGS
S
VGS
4..5V
-
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
4.5V
0.5 x RATED VDS
G
S
QG
TO THE
OSCILLOSCOPE
D
Q GS
Q GD
VGS
+
1~ 3 mA
I
G
I
D
Charge
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Q
AP2030SD
P-Channel
25
25
-4.5V
-4.0V
-3.5V
-4.5V
-4.0V
20
20
-ID , Drain Current (A)
-ID , Drain Current (A)
-3.5V
-3,0V
15
10
V GS = - 2.5V
15
-3,0V
10
V GS = - 2.5V
5
5
T C =150 o C
T C =25 o C
0
0
0
1
2
3
4
5
0
6
1
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
100
I D =-2.2A
T C =25 ℃
95
I D =-2.2A
V GS = -4.5V
1.6
90
Normalized RDS(ON)
RDS(ON) (mΩ )
85
80
75
70
1.4
1.2
1
65
60
0.8
55
0.6
50
-50
2
3
4
-V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
5
0
50
100
o
T j , Junction Temperature ( C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
AP2030SD
P-Channel
2.4
3
2
PD (W)
-ID , Drain Current (A)
1.8
1.2
1
0.6
0
0
25
50
75
100
125
T c , Case Temperature (
o
150
0
50
C)
100
T c ,Case Temperature (
Fig 5. Maximum Drain Current v.s.
150
o
C)
Fig 6. Typical Power Dissipation
Case Temperature
1
100
Normalized Thermal Response (R thja)
Duty Factor = 0.5
10
1ms
-ID (A)
10ms
1
100ms
1s
10s
DC
0.1
T C =25 o C
Single Pulse
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
Single Pulse
t
T
Duty Factor = t/T
Peak Tj = P DM x Rthja + Ta
Rthja=90oC/W
0.01
0.1
1
10
-V DS (V)
Fig 7. Maximum Safe Operating Area
100
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 8. Effective Transient Thermal Impedance
AP2030SD
P-Channel
6
I D =-2.2A
V DS =-6V
5
-VGS , Gate to Source Voltage (V)
f=1.0MHz
10000
4
1000
C (pF)
Ciss
3
2
Coss
Crss
100
1
0
10
0
2
4
6
8
10
12
14
1
5
9
13
17
21
25
29
-V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
1
100
0.8
10
T j =25 o C
-VGS(th) (V)
-IS(A)
T j =150 o C
1
0.6
0.4
0.1
0.2
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
-V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
1.5
0
-50
0
50
100
T j ,Junction Temperature ( o C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
150
AP2030SD
P-Channel
VDS
90%
RD
VDS
D
RG
TO THE
OSCILLOSCOPE
0.5 x RATED VDS
G
10%
S
-4.5 V
VGS
VGS
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
-4.5V
0.3 x RATED VDS
G
S
QG
TO THE
OSCILLOSCOPE
D
QGS
QGD
VGS
-1~-3mA
I
G
ID
Charge
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Q