ALSC AS7C3364FT32B-75TQIN 3.3v 64k x 32/36 flow through synchronous sram Datasheet

AS7C3364FT32B
AS7C3364FT36B
February 2005
®
3.3V 64K × 32/36 Flow Through Synchronous SRAM
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
Organization: 65,536 words × 32 or 36 bits
Fast clock to data access: 6.5/7.5/8.0/10.0 ns
Fast OE access time: 3.5/4.0 ns
Fully synchronous flow through operation
Asynchronous output enable control
Available in 100-pin TQFP package
Individual byte write and Global write
Multiple chip enables for easy expansion
3.3V core power supply
2.5V or 3.3V I/O operation with separate VDDQ
Linear or interleaved burst control
Snooze mode for reduced power standby
Common data inputs and data outputs
Logic block diagram
LBO
CLK
ADV
ADSC
ADSP
CLK
CE
CLR
18
A[17:0]
GWE
BWE
BWd
Q0
Burst logic
Q1
18
D
Q
CE Address
register
CLK
16
36/32
D
DQd Q
Byte write
registers
CLK
36/32
D DQ Q
c
Byte write
registers
CLK
BWc
D DQb Q
Byte write
registers
CLK
BWb
BWa
D
DQa Q
Byte write
registers
CLK
CE0
CE1
CE2
D
ZZ
64K × 32/36
Memory
array
18
4
OE
Output
buffer
Q
Enable
CE register
CLK
Power
down
Input
registers
CLK
D Enable Q
delay
register
CLK
36/32
OE
DQ[a:d]
Selection guide
–65
-75
-80
-10
Units
Minimum cycle time
7.5
8.5
10
12
ns
Maximum clock access time
6.5
7.5
8.0
10.0
ns
Maximum operating current
275
250
215
185
mA
Maximum standby current
90
85
75
75
mA
Maximum CMOS standby current (DC)
30
30
30
30
mA
2/8/05; v.1.2
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Copyright © Alliance Semiconductor. All rights reserved.
AS7C3364FT32B
AS7C3364FT36B
®
2 Mb Synchronous SRAM products list1,2
Org
128KX18
Part Number
AS7C33128PFS18B
Mode
PL-SCD
Speed
200/166/133 MHz
64KX32
64KX36
128KX18
64KX32
64KX36
128KX18
64KX32
64KX36
AS7C3364PFS32B
AS7C3364PFS36B
AS7C33128PFD18B
AS7C3364PFD32B
AS7C3364PFD36B
AS7C33128FT18B
AS7C3364FT32B
AS7C3364FT36B
PL-SCD
PL-SCD
PL-DCD
PL-DCD
PL-DCD
FT
FT
FT
200/166/133 MHz
200/166/133 MHz
200/166/133 MHz
200/166/133 MHz
200/166/133 MHz
6.5/7.5/8.0/10 ns
6.5/7.5/8.0/10 ns
6.5/7.5/8.0/10 ns
1 Core Power Supply: VDD = 3.3V + 0.165V
2 I/O Supply Voltage: VDDQ = 3.3V + 0.165V for 3.3V I/O
VDDQ = 2.5V + 0.125V for 2.5V I/O
PL-SCD
PL-DCD
FT
2/8/05; v.1.2
:
:
:
Pipelined Burst Synchronous SRAM - Single Cycle Deselect
Pipelined Burst Synchronous SRAM - Double Cycle Deselect
Flow-through Burst Synchronous SRAM
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AS7C3364FT32B
AS7C3364FT36B
®
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
TQFP 14 × 20 mm
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
DQPb/NC
DQb7
DQb6
VDDQ
VSSQ
DQb5
DQb4
DQb3
DQb2
VSSQ
VDDQ
DQb1
DQb0
VSS
NC
VDD
ZZ
DQa7
DQa6
VDDQ
VSSQ
DQa5
DQa4
DQa3
DQa2
VSSQ
VDDQ
DQa1
DQa0
DQPa/NC
LBO
A
A
A
A
A1
A0
NC
NC
VSS
VDD
NC
NC
A
A
A
A
A
A
NC
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
DQPc/NC
DQc0
DQc1
VDDQ
VSSQ
DQc2
DQc3
DQc4
DQc5
VSSQ
VDDQ
DQc6
DQc7
NC
VDD
NC
VSS
DQd0
DQd1
VDDQ
VSSQ
DQd2
DQd3
DQd4
DQd5
VSSQ
VDDQ
DQd6
DQd7
DQPd/NC
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
A
A
CE0
CE1
BWd
BWc
BWb
BWa
CE2
VDD
VSS
CLK
GWE
BWE
OE
ADSC
ADSP
ADV
A
A
Pin arrangement
Note: Pins 1,30,51,80 are NC for ×32
2/8/05; v.1.2
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AS7C3364FT32B
AS7C3364FT36B
®
Functional description
The AS7C3364FT32B/36B is a high-performance CMOS 2-Mbit synchronous Static Random Access Memory (SRAM) device organized as
65,536 words × 32 or 36 bits.
Fast cycle times of 7.5/8.5/10/12 ns with clock access times (tCD) of 6.5/7.5/8.0/10 ns. Three chip enable (CE) inputs permit easy memory
expansion. Burst operation is initiated in one of two ways: the controller address strobe (ADSC), or the processor address strobe (ADSP).
The burst advance pin (ADV) allows subsequent internally generated burst addresses.
Read cycles are initiated with ADSP (regardless of WE and ADSC) using the new external address clocked into the on-chip address register
when ADSP is sampled low, the chip enables are sampled active, and the output buffer is enabled with OE. In a read operation, the data
accessed by the current address registered in the address registers by the positive edge of CLK are carried to the data-out buffer. ADV is
ignored on the clock edge that samples ADSP asserted, but is sampled on all subsequent clock edges. Address is incremented internally for
the next access of the burst when ADV is sampled low and both address strobes are high. Burst mode is selectable with the LBO input. With
LBO unconnected or driven high, burst operations use an interleaved count sequence. With LBO driven low, the device uses a linear count
sequence.
Write cycles are performed by disabling the output buffers with OE and asserting a write command. A global write enable GWE writes all
32/36 regardless of the state of individual BW[a:d] inputs. Alternately, when GWE is high, one or more bytes may be written by asserting
BWE and the appropriate individual byte BWn signals.
BWn is ignored on the clock edge that samples ADSP low, but it is sampled on all subsequent clock edges. Output buffers are disabled when
BWn is sampled LOW regardless of OE. Data is clocked into the data input register when BWn is sampled low. Address is incremented
internally to the next burst address if BWn and ADV are sampled low.
Read or write cycles may also be initiated with ADSC instead of ADSP. The differences between cycles initiated with ADSC and ADSP are
as follows:
• ADSP must be sampled high when ADSC is sampled low to initiate a cycle with ADSC.
• WE signals are sampled on the clock edge that samples ADSC low (and ADSP high).
• Master chip enable CE0 blocks ADSP, but not ADSC.
The AS7C3364FT32B and AS7C3364FT36B family operates from a core 3.3V power supply. I/Os use a separate power supply that can
operate at 2.5V or 3.3V. These devices are available in a 100-pin TQFP package.
TQFP capacitance
Parameter
Input capacitance
I/O capacitance
Symbol
Test conditions
Min
Max
Unit
CIN*
CI/O*
VIN = 0V
-
5
pF
VOUT = 0V
-
7
pF
*Guaranteed not tested
TQFP thermal resistance
Description
Thermal resistance
(junction to ambient)1
Thermal resistance
(junction to top of case)1
Conditions
Test conditions follow standard test methods and
procedures for measuring thermal impedance,
per EIA/JESD51
Symbol
Typical
Units
1–layer
θJA
40
°C/W
4–layer
θJA
22
°C/W
θJC
8
°C/W
1 This parameter is sampled
2/8/05; v.1.2
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AS7C3364FT32B
AS7C3364FT36B
®
Signal descriptions
Pin
Description
I/O
Properties
CLK
I
CLOCK
A,A0,A1
I
SYNC
Address. Sampled when all chip enables are active and when ADSC or ADSP are asserted.
I/O
SYNC
Data. Driven as output when the chip is enabled and when OE is active.
CE0
I
SYNC
Master chip enable. Sampled on clock edges when ADSP or ADSC is active. When CE0 is inactive,
ADSP is blocked. Refer to the “Synchronous truth table” for more information.
CE1, CE2
I
SYNC
Synchronous chip enables, active high, and active low, respectively. Sampled on clock edges when
ADSC is active or when CE0 and ADSP are active.
ADSP
I
SYNC
Address strobe processor. Asserted low to load a new address or to enter standby mode.
ADSC
I
SYNC
Address strobe controller. Asserted low to load a new address or to enter standby mode.
ADV
I
SYNC
Advance. Asserted low to continue burst read/write.
GWE
I
SYNC
Global write enable. Asserted low to write all 32/36 bits. When high, BWE and BW[a:d] control write
enable.
BWE
I
SYNC
Byte write enable. Asserted low with GWE high to enable effect of BW[a:d] inputs.
BW[a,b,c,d]
I
SYNC
Write enables. Used to control write of individual bytes when GWE is high and BWE is low. If any of
BW[a:d] is active with GWE high and BWE low, the cycle is a write cycle. If all BW[a:d] are inactive,
the cycle is a read cycle.
OE
I
ASYNC
Asynchronous output enable. I/O pins are driven when OE is active and chip is in read mode.
LBO
I
STATIC
Selects Burst mode. When tied to VDD or left floating, device follows interleaved Burst order. When
driven Low, device follows linear Burst order. This signal is internally pulled High.
ZZ
I
ASYNC
Snooze. Places device in low power mode; data is retained. Connect to GND if unused.
NC
-
-
DQ[a,b,c,d]
Clock. All inputs except OE, ZZ, and LBO are synchronous to this clock.
No connect
Snooze Mode
SNOOZE MODE is a low current, power-down mode in which the device is deselected and current is reduced to ISB2. The duration of
SNOOZE MODE is dictated by the length of time the ZZ is in a High state.
The ZZ pin is an asynchronous, active high input that causes the device to enter SNOOZE MODE.
When the ZZ pin becomes a logic High, ISB2 is guaranteed after the time tZZI is met. After entering SNOOZE MODE, all inputs except ZZ
is disabled and all outputs go to High-Z. Any operation pending when entering SNOOZE MODE is not guaranteed to successfully complete.
Therefore, SNOOZE MODE (READ or WRITE) must not be initiated until valid pending operations are completed. Similarly, when exiting
SNOOZE MODE during tPUS, only a DESELECT or READ cycle should be given while the SRAM is transitioning out of SNOOZE MODE.
2/8/05; v.1.2
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AS7C3364FT32B
AS7C3364FT36B
®
Write enable truth table (per byte)1
Function
GWE
BWE
BWa
BWb
BWc
BWd
L
X
X
X
X
X
H
L
L
L
L
L
Write Byte a
H
L
L
H
H
H
Write Byte c and d
H
L
H
H
L
L
H
H
X
X
X
X
H
L
H
H
H
H
Write All Bytes
Read
1 Key: X = don’t care, L = low, H = high, n = a, b, c, d; BWE, BWn = internal write signal.
Asynchronous Truth Table
Operation
Snooze mode
ZZ
H
L
L
L
L
Read
Write
Deselected
OE
X
L
H
X
X
I/O Status
High-Z
Dout
High-Z
Din, High-Z
High-Z
Notes:
1. X means “Don’t Care”
2. ZZ pin is pulled down internally
3. For write cycles that follows read cycles, the output buffers must be disabled with OE, otherwise data bus contention will occur.
4. Snooze mode means power down state of which stand-by current does not depend on cycle times
5. Deselected means power down state of which stand-by current depends on cycle times
Burst sequence table
Interleaved burst address (LBO = 1)
A1 A0
st
A1 A0
A1 A0
Linear burst address (LBO = 0)
A1 A0
st
A1 A0
A1 A0
A1 A0
A1 A0
1 Address
00
01
10
11
1 Address
00
01
10
11
2nd Address
01
00
11
10
2nd Address
01
10
11
00
rd
rd
3 Address
10
11
00
01
3 Address
10
11
00
01
4th Address
11
10
01
00
4th Address
11
10
01
10
2/8/05; v.1.2
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AS7C3364FT32B
AS7C3364FT36B
®
Synchronous truth table[4]
CE01
CE1
CE2
ADSP
ADSC
H
L
L
L
L
L
L
L
L
X
X
X
X
H
H
H
H
L
X
H
X
H
X
L
L
X
X
H
H
H
H
X
X
X
X
X
X
X
X
H
X
X
X
X
X
X
X
H
H
L
L
L
L
X
X
X
X
X
X
X
X
L
X
X
X
X
X
L
H
L
H
L
L
H
H
H
H
H
H
X
X
X
X
H
H
X
H
X
L
X
L
X
L
X
X
L
L
H
H
H
H
H
H
H
H
L
H
H
H
H
ADV WRITE[2]
X
X
X
X
X
X
X
X
X
L
L
H
H
L
L
H
H
X
L
L
H
H
X
X
X
X
X
X
X
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
OE
Address accessed
CLK
Operation
DQ
X
X
X
X
X
L
H
L
H
L
H
L
H
L
H
L
H
X
X
X
X
X
NA
NA
NA
NA
NA
External
External
External
External
Next
Next
Current
Current
Next
Next
Current
Current
External
Next
Next
Current
Current
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
Deselect
Deselect
Deselect
Deselect
Deselect
Begin read
Begin read
Begin read
Begin read
Continue read
Continue read
Suspend read
Suspend read
Continue read
Continue read
Suspend read
Suspend read
Begin write
Continue write
Continue write
Suspend write
Suspend write
Hi−Z
Hi−Z
Hi−Z
Hi−Z
Hi−Z
Q
Hi−Z
Q
Hi−Z
Q
Hi−Z
Q
Hi−Z
Q
Hi−Z
Q
Hi−Z
D3
D
D
D
D
1 X = don’t care, L = low, H = high
2 For WRITE, L means any one or more byte write enable signals (BWa, BWb, BWc or BWd) and BWE are LOW or GWE is LOW. WRITE = HIGH for all BWx, BWE, GWE
HIGH. See "Write enable truth table (per byte)," on page 6 for more information.
3 For write operation following a READ, OE must be high before the input data set up time and held high throughout the input hold time
4 ZZ pin is always Low.
2/8/05; v.1.2
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AS7C3364FT32B
AS7C3364FT36B
®
Absolute maximum ratings
Parameter
Power supply voltage relative to GND
Input voltage relative to GND (input pins)
Input voltage relative to GND (I/O pins)
Power dissipation
DC output current
Storage temperature (plastic)
Temperature under bias
Symbol
VDD, VDDQ
VIN
VIN
PD
IOUT
Tstg
Tbias
Min
–0.5
–0.5
–0.5
–
–
–65
–65
Max
+4.6
VDD + 0.5
VDDQ + 0.5
1.8
50
+150
+135
Unit
V
V
V
W
mA
°C
°C
Note: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions may affect reliability.
Recommended operating conditions at 3.3V I/O
Parameter
Supply voltage for inputs
Supply voltage for I/O
Ground supply
Symbol
VDD
VDDQ
Vss
Min
3.135
3.135
0
Nominal
3.3
3.3
0
Max
3.465
3.465
0
Unit
V
V
V
Min
3.135
2.375
0
Nominal
3.3
2.5
0
Max
3.465
2.625
0
Unit
V
V
V
Recommended operating conditions at 2.5V I/O
Parameter
Supply voltage for inputs
Supply voltage for I/O
Ground supply
2/8/05; v.1.2
Symbol
VDD
VDDQ
Vss
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AS7C3364FT32B
AS7C3364FT36B
®
DC electrical characteristics for 3.3V I/O operation
Parameter
Sym
Conditions
Min
Max
Unit
Input leakage current†
|ILI|
VDD = Max, 0V < VIN < VDD
-2
2
µA
Output leakage current
|ILO|
OE ≥ VIH, VDD = Max, 0V < VOUT < VDDQ
-2
2
µA
Address and control pins
2*
Input high (logic 1) voltage
VIH
VDD+0.3
I/O pins
2*
VDDQ+0.3
Address and control pins
-0.3**
0.8
I/O pins
-0.5**
0.8
Input low (logic 0) voltage
V
V
VIL
Output high voltage
VOH
IOH = –4 mA, VDDQ = 3.135V
2.4
–
V
Output low voltage
VOL
IOL = 8 mA, VDDQ = 3.465V
–
0.4
V
DC electrical characteristics for 2.5V I/O operation
Parameter
Sym
Conditions
Min
Max
Unit
current†
|ILI|
VDD = Max, 0V < VIN < VDD
-2
2
µA
Output leakage current
|ILO|
OE ≥ VIH, VDD = Max, 0V < VOUT < VDDQ
-2
2
µA
Address and control pins
1.7*
VIH
VDD+0.3
V
Input high (logic 1) voltage
I/O pins
1.7*
VDDQ+0.3
V
Address and control pins
-0.3**
0.7
V
I/O pins
-0.3**
0.7
V
Input leakage
Input low (logic 0) voltage
VIL
Output high voltage
VOH
IOH = –4 mA, VDDQ = 2.375V
1.7
–
V
Output low voltage
VOL
IOL = 8 mA, VDDQ = 2.625V
–
0.7
V
† LBO and ZZ pins have an internal pull-up or pull-down, and input leakage = ±10 µA.
*
VIH max < VDD +1.5V for pulse width less than 0.2 X tCYC
**
VIL min = -1.5 for pulse width less than 0.2 X tCYC
IDD operating conditions and maximum limits
Parameter
Operating power supply current1
Sym
ICC
ISB
Standby power supply current
Conditions
CE0 < VIL, CE1 > VIH, CE2 < VIL, f = fMax,
IOUT = 0 mA, ZZ < VIL
All VIN ≤ 0.2V or > VDD – 0.2V, Deselected,
f = fMax, ZZ < VIL
-65
-75
-80
-10
Unit
275
250
215
185
mA
90
85
75
75
ISB1
Deselected, f = 0, ZZ < 0.2V,
all VIN ≤ 0.2V or ≥ VDD – 0.2V
30
30
30
30
ISB2
Deselected, f = fMax, ZZ ≥ VDD – 0.2V,
all VIN ≤ VIL or ≥ VIH
30
30
30
30
mA
1 ICC given with no output loading. ICC increases with faster cycle times and greater output loading.
2/8/05; v.1.2
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AS7C3364FT32B
AS7C3364FT36B
®
Timing characteristics over operating range
–65
Parameter
-75
-80
–10
Sym
Min Max Min Max Min Max
Cycle time
tCYC
7.5
–
8.5
–
10
Clock access time
tCD
–
6.5
–
7.5
Output enable LOW to data valid
tOE
–
3.5
–
Clock HIGH to output Low Z
tLZC
2.5
–
Data output invalid from clock HIGH
tOH
2.5
Output enable LOW to output Low Z
tLZOE
Output enable HIGH to output High Z
Clock HIGH to output High Z
Notes
1
Min
Max
Unit
–
12
–
ns
–
8.0
–
10
ns
3.5
–
4.0
–
4.0
ns
2.5
–
2.5
–
2.5
–
ns
2,3,4
–
2.5
–
2.5
–
2.5
–
ns
2
0
–
0
–
0
–
0
–
ns
2,3,4
tHZOE
–
3.0
–
3.5
–
4.0
–
5.0
ns
2,3,4
tHZC
–
3.0
–
3.5
–
4.0
–
5.0
ns
2,3,4
tOHOE
0
–
0
–
0
–
0
–
ns
Clock HIGH pulse width
tCH
2.5
–
3.0
–
4.0
–
4.0
–
ns
5
Clock LOW pulse width
tCL
2.5
–
3.0
–
4.0
–
4.0
–
ns
5
Address setup to clock HIGH
tAS
1.5
–
2.0
–
2.0
–
2.0
–
ns
6
Data setup to clock HIGH
tDS
1.5
–
2.0
–
2.0
–
2.0
–
ns
6
Write setup to clock HIGH
tWS
1.5
–
2.0
–
2.0
–
2.0
–
ns
6,7
Chip select setup to clock HIGH
tCSS
1.5
–
2.0
–
2.0
–
2.0
–
ns
6,8
Address hold from clock HIGH
tAH
0.5
–
0.5
–
0.5
–
0.5
–
ns
6
Data hold from clock HIGH
tDH
0.5
–
0.5
–
0.5
–
0.5
–
ns
6
Write hold from clock HIGH
tWH
0.5
–
0.5
–
0.5
–
0.5
–
ns
6,7
Chip select hold from clock HIGH
tCSH
0.5
–
0.5
–
0.5
–
0.5
–
ns
6,8
ADV setup to clock HIGH
tADVS
1.5
–
2.0
–
2.0
–
2.0
–
ns
6
ADSP setup to clock HIGH
tADSPS
1.5
–
2.0
–
2.0
–
2.0
–
ns
6
ADSC setup to clock HIGH
tADSCS
1.5
–
2.0
–
2.0
–
2.0
–
ns
6
ADV hold from clock HIGH
tADVH
0.5
–
0.5
–
0.5
–
0.5
–
ns
6
ADSP hold from clock HIGH
tADSPH
0.5
–
0.5
–
0.5
–
0.5
–
ns
6
ADSC hold from clock HIGH
tADSCH
0.5
–
0.5
–
0.5
–
0.5
–
ns
6
Output enable HIGH to invalid output
1 See “Notes” on page 16.
Snooze Mode Electrical Characteristics
Description
Current during Snooze Mode
ZZ active to input ignored
ZZ inactive to input sampled
ZZ active to SNOOZE current
ZZ inactive to exit SNOOZE current
2/8/05; v.1.2
Conditions
Symbol
ZZ > VIH
ISB2
tPDS
tPUS
tZZI
tRZZI
Alliance Semiconductor
Min
Max
Units
30
mA
cycle
cycle
cycle
2
2
2
0
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Key to switching waveforms
Rising input
Falling input
don’t care
Undefined
Timing waveform of read cycle
tCYC
tCL
tCH
CLK
tADSPS
tADSPH
ADSP
tADSCS
tADSCH
ADSC
tAS
LOAD NEW ADDRESS
tAH
A1
Address
A2
tWS
A3
tWH
GWE, BWE
tCSS
tCSH
CE0, CE2
CE1
tADVS
tADVH
ADV
ADV inserts wait states
OE
tOE
tHZOE
tOH
tLZOE
Dout
Q(A1)
Q(A2Ý01)
Q(A2Ý10)
Q(A2Ý11)
tCD
Read
Q(A1)
Suspend
Read
Q(A1)
Q(A3)
Q(A3Ý01)
Q(A3Ý10)
Q(A3Ý11)
tHZC
Read Burst ReadBurst Read Suspend Burst Read Read Burst Read Burst Read Burst Read
Q(A2) Q(A 2Ý01) Q(A 2Ý10)
Read
Q(A 2Ý11) Q(A3) Q(A 3Ý01) Q(A 3Ý10) Q(A 3Ý11) DSEL
Q(A 2Ý10)
Note: Ý = XOR when LBO = high/no connect; Ý = ADD when LBO = low. BW[a:d] is don’t care.
2/8/05; v.1.2
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Timing waveform of write cycle
tCYC
tCL
tCH
CLK
tADSPS
tADSPH
ADSP
tADSCS
tADSCH
ADSC
ADSC LOADS NEW ADDRESS
tAS
tAH
Address
A1
A3
A2
tWS
tWH
BWE
BW[a:d]
tCSS
tCSH
CE0, CE2
CE1
tADVS
tADVH
ADV SUSPENDS BURST
ADV
OE
tDS
tDH
Din
D(A1)
Read
Q(A1)
Suspend
Write
D(A1)
D(A2)
Read
Q(A2)
D(A2Ý01)
Suspend
Write
D(A 2)
D(A2Ý01)
D(A2Ý10)
D(A2Ý11)
D(A3)
ADV
Suspend
ADV
ADV
Burst
Write
Burst
Burst
Write
D(A 2Ý01)
Write
Write
D(A 2Ý01)
D(A 2Ý10) D(A 2Ý11)
D(A3Ý01)
Write
D(A 3)
D(A3Ý10)
Burst
Write
D(A 3Ý01)
ADV
Burst
Write
D(A 3Ý10)
Note: Ý = XOR when LBO = high/no connect; Ý = ADD when LBO = low.
2/8/05; v.1.2
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Timing waveform of read/write cycle (ADSP Controlled; ADSC High)
tCYC
tCL
tCH
CLK
tADSPS
tADSPH
ADSP
tAS
tAH
Address
A2
A1
A3
tWS
tWH
BWE
BW[a:d]
CE0, CE2
CE1
tADVS
tADVH
ADV
OE
tDS tDH
Din
D(A2)
tOE
tCD
Dout
tLZC
tOH
tLZOE
tHZOE
Q(A1)
Read
Q(A1)
Q(A3)
Suspend
Read
Q(A1)
Read
Q(A2)
Suspend
Write
D(A 2)
Read
Q(A3)
Q(A3Ý01)
ADV
Burst
Read
Q(A 3Ý01)
Q(A3Ý10)
ADV
Burst
Read
Q(A 3Ý10)
Q(A3Ý11)
ADV
Burst
Read
Q(A 3Ý11)
Suspend
Read
Q(A 3Ý11)
Note: Ý = XOR when LBO = high/no connect; Ý = ADD when LBO = low.
2/8/05; v.1.2
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Timing waveform of read/write cycle(ADSC controlled, ADSP = HIGH)
tCH
tCYC
tCL
CLK
tADSCS
tADSCH
ADSC
tAS
ADDRESS
A1
A3
A2
A5
A4
A7
A6
tWS
BWE
BW[a:d]
tCSS
tAH
A8
A9
A10
tWH
tCSH
CE0,CE2
CE1
OE
tCD
tOE
tLZOE
Q(A1)
Dout
Q(A2)
Q(A3)
Q(A9)
Q(A4)
Din
D(A5)
READ
Q(A2)
READ
Q(A3)
READ
Q(A4)
Q(A10)
tDH
tDS
READ
Q(A1)
tOH
tHZOE
D(A6)
D(A7)
D(A8)
WRITE WRITE WRITE WRITE
D(A6) D(A7) D(A8)
D(A5)
READ
Q(A9)
READ
Q(A10)
Note: ADV is don’t care here.
2/8/05; v.1.2
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Timing waveform of power down cycle
tCH
tCYC
tCL
CLK
tADSPS
tADSPS
ADSP
ADSC
A2
A1
ADDRESS
tWH
tWS
BWE
BW[a:d]
tCSS
tCSH
CE0,CE2
CE1
ADV
OE
tOE
Din
tLZOE
tHZOE
tHZC
Dout
Q(A2)
Q(A1)
tPUS
tPDS
ZZ Recovery Cycle
ZZ
Q(A2(Ý01))
Normal Operation Mode
ZZ Setup Cycle
tZZI
tRZZI
Isupply
ISB2
Sleep
State
READ
Q(A1)
2/8/05; v.1.2
READ
Q(A2)
READ
Q(A1Ý01)
Alliance Semiconductor
READ
Q(A2Ý01)
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AC test conditions
• Output load: see Figure B, except for tLZC, tLZOE, tHZOE, tHZC, see Figure C.
• Input pulse level: GND to 3V. See Figure A.
Thevenin equivalent:
• Input rise and fall time (measured at 0.3V and 2.7V): 2 ns. See Figure A.
+3.3V for 3.3V I/O;
/+2.5V for 2.5V I/O
• Input and output timing reference levels: 1.5V.
Z0 = 50Ω
+3.0V
90%
10%
GND
90%
10%
Figure A: Input waveform
DOUT
50Ω
VL = 1.5V
for 3.3V I/O;
30 pF* = V
DDQ/2
for 2.5V I/O
Figure B: Output load (A)
DOUT
353Ω / 1538Ω
319Ω / 1667Ω
5 pF*
GND *including scope
and jig capacitanc
Figure C: Output load (B)
Notes
1 For test conditions, see AC Test Conditions, Figures A, B, C.
2 This parameter measured with output load condition in Figure C.
3 This parameter is sampled, but not 100% tested.
4 tHZOE is less than tLZOE; and tHZC is less than tLZC at any given temperature and voltage.
5 tCH measured as HIGH above VIH and tCL measured as LOW below VIL.
6 This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK. All other synchronous inputs
must meet the setup and hold times for all rising edges of CLK when chip is enabled.
7 Write refers to GWE, BWE, BW[a:d].
8 Chip select refers to CE0, CE1, CE2
2/8/05; v.1.2
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Package Dimensions
100-pin quad flat pack (TQFP)
Hd
D
c
L1
L
b
A1 A2
α
e
He E
TQFP
Min
Max
A1
0.05
0.15
A2
1.35
1.45
b
0.22
0.38
c
0.09
0.20
D
13.90 14.10
E
19.90 20.10
e
0.65 nominal
Hd
15.85 16.15
He
21.80 22.20
L
0.45
0.75
L1
1.00 nominal
α
0°
7°
Dimensions in
millimeters
2/8/05; v.1.2
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Ordering information
Package Width
–65
AS7C3364FT32B65TQC
AS7C3364FT32B65TQI
AS7C3364FT36B65TQC
AS7C3364FT36B65TQI
-75
–80
AS7C3364FT32BAS7C3364FT32BTQFP
x32
75TQC
80TQC
AS7C3364FT32BAS7C3364FT32BTQFP
x32
75TQI
80TQI
AS7C3364FT36BAS7C3364FT36BTQFP
x36
75TQC
80TQC
AS7C3364FT36BAS7C3364FT36BTQFP
x36
75TQI
80TQI
Note: Add suffix ‘N’ to the above part numbers for Lead Free Parts (Ex. AS7C3364FT32B-65TQCN)
–10
AS7C3364FT32B10TQC
AS7C3364FT32B10TQI
AS7C3364FT36B10TQC
AS7C3364FT36B10TQI
Part numbering guide
AS7C
1
33
2
64
3
FT
4
32/36
5
B
6
–XX
7
TQ
8
C/I
9
X
10
1. Alliance Semiconductor SRAM Prefix
2. Operating voltage: 33 = 3.3V
3. Organization: 64 = 64K
4. Flowthrough mode
5. Organization: 32 = X32; 36 = X36
6. Production version: B= product revision
7. Clock access time: [-65 = 6.5 ns; -75 = 7.5 ns; -80 = 8.0 ns; -10 = 10.0]
8. Package type: TQ = TQFP
9. Operating temperature: C=Commercial (0° C to 70° C); I=Industrial (-40° C to 85° C)
10. N = Lead free part
2/8/05; v.1.2
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®
Alliance Semiconductor Corporation
2575, Augustine Drive,
Santa Clara, CA 95054
Tel: 408 - 855 - 4900
Fax: 408 - 855 - 4999
www.alsc.com
Copyright © Alliance Semiconductor
All Rights Reserved
Part Number: AS7C3364FT32B
AS7C3364FT36B
Document Version: v.1.2
© Copyright 2003 Alliance Semiconductor Corporation. All rights reserved. Our three-point logo, our name and Intelliwatt are trademarks or registered
trademarks of Alliance. All other brand and product names may be the trademarks of their respective companies. Alliance reserves the right to make
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