BUL128DR8 Rev.E Mar.-2016 描述 / DATA SHEET Descriptions TO-220F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220F Plastic Package. 特征 / Features 耐压高、稳定性好、N 沟道晶体管，一致性好、可靠性高，开关速度快。 NPN transistor, high voltage capability, low spread of dynamic parameters, minimum lot-to-lot spread for Reliable operation, very high switching speed. 用途 / Applications 用于电子荧光灯和低功率快速转换。 Electronic ballasts for fluorescent lighting,flyback and forward single transistor low power converters . 内部等效电路 引脚排列 12 / Equivalent Circuit / Pinning 3 PIN1：Base 放大及印章代码 PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking 见印章说明。See Marking Instructions. http://www.fsbrec.com 1/6 BUL128DR8 Rev.E Mar.-2016 极限参数 / DATA SHEET Absolute Maximum Ratings(Ta=25℃) 参数 Parameter Collector to Base Voltage 符号 Symbol VCBO 数值 Rating 700 单位 Unit V Collector to Emitter Voltage VCEO 400 V Emitter to Base Voltage VEBO 9.0 V Collector Current - Continuous IC 4.0 A Collector Power Dissipation PC 2.0 W Collector Power Dissipation PC(Tc=25℃) 75 W Tj 150 ℃ Tstg -55～150 ℃ Junction Temperature Storage Temperature Range 电性能参数 / Electrical Characteristics(Ta=25℃) 参数 Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage 符号 Symbol 测试条件 Test Conditions 最小值 典型值 最大值 单位 Min Typ Max Unit VCBO IC=1mA IE=0 700 V VCEO IC=10mA IB=0 400 V Emitter to Base Breakdown Voltage VEBO IE=1mA IC=0 9.0 V Emitter Base Cut-Off Current ICBO VCB=700V IE=0 0.1 mA Collector Cut-Off Current ICEO VCE=400V IB=0 0.1 mA Collector cut-off current IEBO VEB=9.0V IC=0 0.1 mA DC Current Gain hFE VCE=5.0V IC=1.0A 10 40 Collector to Emitter Saturation Voltage VCE(sat) IC=2.0A IB=0.5A 0.8 V Base to Emitter Saturation Voltage VBE(sat) IC=2.0A IB=0.5A 1.2 V VCE=10V f=1.0MHz IC=0.5A VCE=5V (UI9600) IC=0.5A Transition Frequency fT Fall time tf Storage time ts http://www.fsbrec.com 7.0 MHz 0.8 μs 4.0 μs 2/6 BUL128DR8 Rev.E Mar.-2016 电参数曲线图 DATA SHEET / Electrical Characteristic Curve SOA(DC) hFE-Ic http://www.fsbrec.com PC-TC hFE-Ic Vces-IC Vbes-IC tS-Ta hFE-Ta 3/6 BUL128DR8 Rev.E Mar.-2016 外形尺寸图 DATA SHEET / Package Dimensions http://www.fsbrec.com 4/6 BUL128DR8 Rev.E Mar.-2016 印章说明 / DATA SHEET Marking Instructions BR 128D R8 **** 说明： BR： 为公司代码 128D： 为型号代码 R8： 为规格代码 ****： 为生产批号代码，随生产批号变化。 Company Code Note: BR: 128D： Product Type. R8： Specification Code ****: http://www.fsbrec.com Lot No. Code, code change with Lot No. 5/6 BUL128DR8 Rev.E Mar.-2016 DATA SHEET 波峰焊温度曲线图(无铅) / Temperature Profile for Dip Soldering(Pb-Free) 说明： Note: 1、预热温度 25～150℃，时间 60～90sec; 1.Preheating:25~150℃, Time:60~90sec. 2、峰值温度 255±5℃，时间持续为 5±0.5sec; 2.Peak Temp.:255±5℃, Duration:5±0.5sec. 3、焊接制程冷却速度为 2～10℃/sec. 3. Cooling Speed: 2~10℃/sec. 耐焊接热试验条件 / Resistance to Soldering Heat Test Conditions 温度：270±5℃ 包装规格 Package Type 封装形式 TO-220/F 套管包装 Package Type 封装形式 使用说明 Temp.:270±5℃ Time:10±1 sec / Packaging SPEC. 散件包装 TO-220/F 时间：10±1 sec. / BULK Units 包装数量 Dimension 包装尺寸 3 (unit：mm ) Units/Bag 只/袋 Bags/Inner Box 袋/盒 Units/Inner Box 只/盒 Inner Boxes/Outer Box 盒/箱 Units/Outer Box 只/箱 Bag 袋 Inner Box 盒 Outer Box 箱 200 10 2,000 5 10,000 135×190 237×172×102 560×245×195 Units/Tube 只/套管 Tubes/Inner Box 套管/盒 Units/Inner Box 只/盒 Inner Boxes/Outer Box 盒/箱 Units/Outer Box 只/箱 Tube 套管 Inner Box 盒 Outer Box 箱 50 20 1,000 5 5,000 532×31.4×5.5 555×164×50 575×290×180 / TUBE Units 包装数量 Dimension 包装尺寸 3 (unit：mm ) / Notices http://www.fsbrec.com 6/6