Excelics EPA160A-100P High efficiency heterojunction power fet Datasheet

EPA160A-100P
High Efficiency Heterojunction Power FET
UPDATED 02/15/2005
•
•
•
•
•
•
NON-HERMETIC 100MIL METAL FLANGE PACKAGE
+31.0dBm TYPICAL OUTPUT POWER
11.5dB TYPICAL POWER GAIN AT 12GHz
0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE
Si3N4 PASSIVATION
ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
D
G
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
MIN
TYP
29.0
31.0
31.0
11.5
8.0
PAE
Output Power at 1dB Compression
f= 12GHz
Vds=8V, Ids=50% Idss
f= 18GHz
Gain at 1dB Compression
f= 12GHz
Vds=8V, Ids=50% Idss
f= 18GHz
Power Added Efficiency at 1dB Compression
Vds=8 V, Ids=50% Idss
f=12GHz
Idss
Saturated Drain Current
Vds=3V, Vgs=0V
290
480
Gm
Transconductance
Vds=3V, Vgs=0V
320
500
Vp
Pinch-off Voltage
Vds=3V, Ids=4.5mA
P1dB
G1dB
9.5
MAX
dBm
dB
41
-1.0
UNIT
%
660
mA
mS
-2.5
V
BVgd
Drain Breakdown Voltage
Igd=1.6mA
-13
-15
V
BVgs
Source Breakdown Voltage
Igs=1.6mA
-7
-14
V
33*
ºC/W
Rth
•
PARAMETERS/TEST CONDITIONS
Thermal Resistance (Au-Sn Eutectic Attach)
Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION AT 25°C
SYMBOLS
PARAMETERS
Drain-Source Voltage
Vds
Gate-Source Voltage
Vgs
Drain Current
Ids
Forward
Gate Current
Igsf
Input Power
Pin
Channel Temperature
Tch
Storage Temperature
Tstg
Total Power Dissipation
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
CONTINUOUS1,2
8V
-3V
435mA
14mA
@ 3dB Compression
150 oC
-65 to +150 oC
3.4W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised February 2005
EPA160A-100P
High Efficiency Heterojunction Power FET
UPDATED 02/15/2005
S-PARAMETERS
8V, ½ Idss
FREQ
(GHz)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
--- S11 --MAG
ANG
0.897
0.8556
0.8463
0.8519
0.858
0.8508
0.8567
0.8622
0.8786
0.8892
0.9018
0.9046
0.8958
0.8898
0.9201
0.9115
0.921
0.9757
0.9157
0.887
-97.83
-138.32
-161.09
-175.22
174.42
162.41
148.39
140.8
133.15
121.59
110.17
103.54
100.63
91.61
79.78
72.91
76.49
69.22
54.5
46.41
--- S21 --MAG
ANG
12.5419
7.7689
5.4611
4.1206
3.3447
2.8519
2.4307
2.1652
1.8723
1.6132
1.4439
1.3256
1.1794
1.0351
0.9638
0.8571
0.8482
0.8496
0.7847
0.7575
118.91
90.57
71.1
55.4
41.57
28.46
15.06
1.92
-10.15
-21.93
-34.13
-46.47
-56.99
-65.22
-76.98
-88.86
-96.06
-105.81
-117.28
-129.46
--- S12 --MAG
ANG
0.0319
0.0388
0.0401
0.0391
0.0372
0.037
0.0344
0.0338
0.0333
0.0319
0.0296
0.0298
0.0319
0.0327
0.0344
0.0329
0.0386
0.0421
0.0415
0.0449
38.76
17.85
7.73
0.48
-5.8
-9.6
-12.94
-16.52
-18.18
-26.17
-28.49
-32.38
-33
-39.8
-44.85
-50.1
-53.04
-60.11
-68.14
-76.32
--- S22 --MAG
ANG
0.3246
0.3218
0.3355
0.3633
0.4116
0.4552
0.4795
0.4727
0.5245
0.589
0.5945
0.5934
0.6502
0.7159
0.6957
0.6575
0.7777
0.7903
0.774
0.7413
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
-79.02
-106.48
-120.16
-132.53
-142.91
-150.15
-154.4
-168.28
178.68
174.2
167.81
153.54
139.78
139.11
135.32
123.22
108.19
105.94
107.95
91.66
page 2 of 2
Revised February 2005
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