IM L RE P RY A INCBRSDSH1-40L SURFACE MOUNT HIGH DENSITY 1 AMP LOW VF SILICON SCHOTTKY BRIDGE RECTIFIER w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CBRSDSH1-40L is a full wave bridge rectifier mounted in a durable epoxy surface mount molded case, utilizing glass passivated chips. MARKING: FULL PART NUMBER FEATURES: SMDIP CASE • Low Leakage Current (20µA TYP @ VRRM) • Low VF Schottky Diodes (440mV MAX @ IF=1.0A) MAXIMUM RATINGS: (TA=25°C unless otherwise noted) Peak Repetitive Reverse Voltage SYMBOL UNITS VRRM VR DC Blocking Voltage RMS Reverse Voltage VR(RMS) IO Average Forward Current Peak Repetitive Forward Current IFRM IFSM Peak Forward Surge Current Operating Junction Temperature V 40 V 28 V 1.2 A 1.7 A 20 A -50 to +125 °C -50 to +150 °C Y AR TJ Tstg Storage Temperature 40 IN ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS IR IR VR=40V VR=40V, TA=100°C VF VF IF=500mA IF=1.0A CJ P E R M I L VR=4.0V, f=1.0MHz TYP 20 MAX UNITS 50 µA 5.0 20 mA 360 380 mV 390 440 mV 150 pF R1 (7-June 2010) IM L RE P RY A CBRSDSH1-40L IN SURFACE MOUNT HIGH DENSITY 1 AMP LOW VF SILICON SCHOTTKY BRIDGE RECTIFIER SMDIP CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER R1 (7-June 2010) w w w. c e n t r a l s e m i . c o m