ACE4410M N-Channel 30-V MOSFET Description The ACE4410M utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • • • • • Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOP8 saves board space Fast switching speed High performance trench technology Absolute Maximum Ratings Parameter Symbol Limit Units Drain-Source Voltage VDS 30 V VGS ±20 V Gate-Source Voltage O TA=25 C Continuous Drain Current a ID TA=70 OC Pulse Drain Current b Continuous Drain Current (Diode Continuous) a TA=25 C 50 Is 2.3 PD TA=70 OC 11 IDM O Power Dissipation a 13 3.1 2.2 Operating Junction and Storage Temperature Range TJ,TSTG -55 to 150 Parameter A W O C Symbol Maximum Units a t≦5sec RθJC 25 ℃/W Maximum Junction-to-Ambient a t≦5sec RθJA 50 ℃/W Maximum Junction-to-Case A Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature VER 1.1 1 ACE4410M N-Channel 30-V MOSFET Packaging Type SOP8 Ordering information ACE4410M FM + H Halogen - free Pb - free FM-SOP8 VER 1.1 2 ACE4410M N-Channel 30-V MOSFET Electrical Characteristics TA=25 OC unless otherwise noted Parameter Symbol Conditions Limits Min. Typ. Unit Max. Static Gate Source Threshold Voltage VGS(th) VDS=VGS, ID=250uA Gate Body Leakage IGSS VDS=0V, VGS=±20V ±100 Zero Gate Voltage Drain Current IDSS VDS=24V, VGS=0V 1 VDS=24V, VGS=0V, TJ=55℃ 25 On-State Drain-Current a ID(on) Static Drain-Source On-Resistance a rDS(ON) Forward Transconductance a gfS VGS=15V,ID=10A 40 S VSD IS=2.3A ,VGS=0V 0.7 V Diode Forward Voltage a VDS=5V, VGS=10V Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Delay Time td(on) Rise Time tf Turn-Off Delay Time td(off) Fall Time tf V nA uA 20 A VGS=10V,ID=10A 13.5 VGS=4.5V,ID=8A 20 Dynamic Total Gate Charge 1 mΩ b VDS=15V, VGS=4.5V, ID=10A VDS=15V, VGS=0V f=1MHz 12.5 2.6 nC 4.6 1191 412 pF 160 20 VDD=25V, ,RL=25Ω ID=1A,VGEN=10V 9 nS 70 20 Note: a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. VER 1.1 3 ACE4410M N-Channel 30-V MOSFET Typical Performance Characteristics VDS, DRAIN-SOURCE VOLTAGE (V) 1. On-Region Characteristics TJ Junction Temperature (C) 3. On-Resistance Variation with Temperature VGS Gate to Source Voltage (V) 5. Transfer Characteristics ID, DRAIN CURRENT (A) 2. On-Resistance with Drain Current VGS, Gate To Source Voltage (V) 4.On-Resistance Variation with VSD, BODY DIODE FORWARD VOLTAGE (V) 6. Body Diode Forward Voltage Variation with Source Current and Temperature VER 1.1 4 ACE4410M N-Channel 30-V MOSFET Typical Performance Characteristics Qg - Gate Charge (nC) 7. Gate Charge Characteristics TA,AMBIENT TEMPERATURE(℃) 9. Threshold Vs Ambient Temperature VDS, DRAIN TO SOURCE VOLTAGE(V) 8. Capacitance Characteristics t1 TIME (sec) 10. Single Pulse Maximum Power Dissipation Normalized Thermal Transient Junction to Ambient t1 TIME (sec) Square Wave Pulse Duration (S) 11. Transient Thermal Response Curve VER 1.1 5 ACE4410M N-Channel 30-V MOSFET Packing Information SOP8 SYMBOLS A A1 B C D E e H h L q DIMENSIONS IN MILLIMETERS MIN MAX 1.35 1.75 0.10 0.20 0.35 0.51 0.19 0.25 4.80 5.00 3.80 4.00 1.27 BSC 5.80 6.20. 0.25 0.50 0.50 0.93 O 0 8O DIENSIONS IN INCHES MIN MAX 0.053 0.069 0.004 0.008 0.014 0.020 0.0075 0.010 0.189 0.196 0.150 0.157 0.050 BSC 0.228 0.244 0.010 0.020 0.020 0.037 O 0 8O VER 1.1 6 ACE4410M N-Channel 30-V MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 7