ACE ACE4410M N-channel 30-v mosfet Datasheet

ACE4410M
N-Channel 30-V MOSFET
Description
The ACE4410M utilize a high cell density trench process to provide low rDS(on) and to ensure minimal
power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable and battery-powered
products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
Features
•
•
•
•
•
Low rDS(on) provides higher efficiency and extends battery life
Low thermal impedance copper leadframe
SOP8 saves board space
Fast switching speed
High performance trench technology
Absolute Maximum Ratings
Parameter
Symbol
Limit
Units
Drain-Source Voltage
VDS
30
V
VGS
±20
V
Gate-Source Voltage
O
TA=25 C
Continuous Drain Current a
ID
TA=70 OC
Pulse Drain Current
b
Continuous Drain Current (Diode Continuous) a
TA=25 C
50
Is
2.3
PD
TA=70 OC
11
IDM
O
Power Dissipation a
13
3.1
2.2
Operating Junction and Storage Temperature Range TJ,TSTG -55 to 150
Parameter
A
W
O
C
Symbol Maximum Units
a
t≦5sec
RθJC
25
℃/W
Maximum Junction-to-Ambient a t≦5sec
RθJA
50
℃/W
Maximum Junction-to-Case
A
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
VER 1.1
1
ACE4410M
N-Channel 30-V MOSFET
Packaging Type
SOP8
Ordering information
ACE4410M FM + H
Halogen - free
Pb - free
FM-SOP8
VER 1.1
2
ACE4410M
N-Channel 30-V MOSFET
Electrical Characteristics TA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Limits
Min.
Typ.
Unit
Max.
Static
Gate Source Threshold Voltage
VGS(th)
VDS=VGS, ID=250uA
Gate Body Leakage
IGSS
VDS=0V, VGS=±20V
±100
Zero Gate Voltage Drain Current
IDSS
VDS=24V, VGS=0V
1
VDS=24V, VGS=0V, TJ=55℃
25
On-State Drain-Current a
ID(on)
Static Drain-Source On-Resistance a
rDS(ON)
Forward Transconductance a
gfS
VGS=15V,ID=10A
40
S
VSD
IS=2.3A ,VGS=0V
0.7
V
Diode Forward Voltage
a
VDS=5V, VGS=10V
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-On Delay Time
td(on)
Rise Time
tf
Turn-Off Delay Time
td(off)
Fall Time
tf
V
nA
uA
20
A
VGS=10V,ID=10A
13.5
VGS=4.5V,ID=8A
20
Dynamic
Total Gate Charge
1
mΩ
b
VDS=15V, VGS=4.5V,
ID=10A
VDS=15V, VGS=0V
f=1MHz
12.5
2.6
nC
4.6
1191
412
pF
160
20
VDD=25V, ,RL=25Ω
ID=1A,VGEN=10V
9
nS
70
20
Note:
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
VER 1.1
3
ACE4410M
N-Channel 30-V MOSFET
Typical Performance Characteristics
VDS, DRAIN-SOURCE VOLTAGE (V)
1. On-Region Characteristics
TJ Junction Temperature (C)
3. On-Resistance Variation with Temperature
VGS Gate to Source Voltage (V)
5. Transfer Characteristics
ID, DRAIN CURRENT (A)
2. On-Resistance with Drain Current
VGS, Gate To Source Voltage (V)
4.On-Resistance Variation with
VSD, BODY DIODE FORWARD VOLTAGE (V)
6. Body Diode Forward Voltage Variation
with Source Current and Temperature
VER 1.1
4
ACE4410M
N-Channel 30-V MOSFET
Typical Performance Characteristics
Qg - Gate Charge (nC)
7. Gate Charge Characteristics
TA,AMBIENT TEMPERATURE(℃)
9. Threshold Vs Ambient Temperature
VDS, DRAIN TO SOURCE VOLTAGE(V)
8. Capacitance Characteristics
t1 TIME (sec)
10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient
t1 TIME (sec)
Square Wave Pulse Duration (S)
11. Transient Thermal Response Curve
VER 1.1
5
ACE4410M
N-Channel 30-V MOSFET
Packing Information
SOP8
SYMBOLS
A
A1
B
C
D
E
e
H
h
L
q
DIMENSIONS IN
MILLIMETERS
MIN
MAX
1.35
1.75
0.10
0.20
0.35
0.51
0.19
0.25
4.80
5.00
3.80
4.00
1.27 BSC
5.80
6.20.
0.25
0.50
0.50
0.93
O
0
8O
DIENSIONS IN INCHES
MIN
MAX
0.053
0.069
0.004
0.008
0.014
0.020
0.0075
0.010
0.189
0.196
0.150
0.157
0.050 BSC
0.228
0.244
0.010
0.020
0.020
0.037
O
0
8O
VER 1.1
6
ACE4410M
N-Channel 30-V MOSFET
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.1
7
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