isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor BUZ11S2 DESCRIPTION ·Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max) ·SOA is Power Dissipation Limited ·High input impedance APPLICATIONS designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT 60 V ±20 V Drain Current-continuous@ TC=37℃ 30 A Total Dissipation@TC=25℃ 75 W Max. Operating Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Ptot Tj Tstg THERMAL CHARACTERISTICS PARAMETER SYMBOL Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient isc website：www.iscsemi.cn PDF pdfFactory Pro MAX UNIT 1.67 ℃/W 75 ℃/W 1 isc & iscsemi is registered trademark www.fineprint.cn isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor BUZ11S2 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 60 VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 1mA 2.1 RDS(ON) Drain-Source On-stage Resistance IGSS MAX UNIT V 4 V VGS= 10V; ID= 19A 0.04 Ω Gate Source Leakage Current VGS= 20V;VDS= 0 100 nA IDSS Zero Gate Voltage Drain Current VDS= 60V; VGS= 0 1 uA VSD Diode Forward Voltage IF= 60A; VGS= 0 1.8 V isc website：www.iscsemi.cn PDF pdfFactory Pro 2 isc & iscsemi is registered trademark www.fineprint.cn