PHILIPS BU4506 Silicon diffused power transistor Datasheet

Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4506AF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
tf
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
VBE = 0 V
3.0
300
1500
800
5
8
45
3.0
450
V
V
A
A
W
V
A
ns
PINNING - SOT199
PIN
Ths ≤ 25 ˚C
IC = 3 A; IB = 0.75 A
f = 16 kHz
ICsat = 3.0 A;f = 16 kHz
PIN CONFIGURATION
SYMBOL
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
c
case
b
1
2
e
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Ths ≤ 25 ˚C
MIN.
MAX.
UNIT
-65
-
1500
800
5
8
3
5
4
45
150
150
V
V
A
A
A
A
A
W
˚C
˚C
TYP.
MAX.
UNIT
-
2.8
K/W
32
-
K/W
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-hs
Junction to heatsink
with heatsink compound
Rth j-a
Junction to ambient
in free air
1 Turn-off current.
July 1999
1
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4506AF
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Visol
Repetitive peak voltage from all
three terminals to external
heatsink
R.H. ≤ 65 % ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN.
TYP.
MAX.
UNIT
-
-
2500
V
-
22
-
pF
MIN.
TYP.
MAX.
UNIT
-
-
1.0
2.0
mA
mA
7.5
800
13.5
-
-
V
V
0.8
4.2
0.89
10
5.5
3.0
0.98
7.3
V
V
TYP.
MAX.
UNIT
3.7
300
4.6
450
µs
ns
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2
ICES
ICES
Collector cut-off current
BVEBO
VCEOsust
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
VCEsat
VBEsat
hFE
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
IB = 1 mA
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 3.0 A; IB = 0.75 A
IC = 3.0 A; IB = 0.75 A
IC = 0.5 A; VCE = 5 V
IC = 3 A; VCE = 5 V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
ICsat = 3.0 A; IB1 = 0.6 A; (IB2 = -1.5 A)
ts
tf
Switching times (16kHz line
deflection circuit)
Turn-off storage time
Turn-off fall time
IC / mA
+ 50v
100-200R
250
Horizontal
200
Oscilloscope
100
Vertical
100R
1R
0
6V
VCE / V
30-60 Hz
min
VCEOsust
Fig.1. Test circuit for VCEOsust.
Fig.2. Oscilloscope display for VCEOsust.
2 Measured with half sine-wave voltage (curve tracer).
July 1999
2
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
ICsat
TRANSISTOR
IC
BU4506AF
100
hFE
Ths = 25 C
DIODE
Ths = 85 C
VCE = 1 V
t
IB1
IB
10
t
20us
26us
IB2
64us
VCE
1
0.01
t
Fig.3. Switching times waveforms (16 kHz).
0.1
1
IC / A 10
Fig.6. High and low DC current gain.
ICsat
100
hFE
Ths = 25 C
90 %
Ths = 85 C
VCE = 5 V
IC
10 %
tf
10
t
ts
IB
IB1
t
1
0.01
- IB2
Fig.4. Switching times definitions.
0.1
1
IC / A
10
Fig.7. High and low DC current gain.
+ 150 v nominal
adjust for ICsat
1
VCESAT / V
Ths = 25 C
Ths = 85 C
0.8
Lc
0.6
0.4
IBend
LB
T.U.T.
Cfb
0.2
-VBB
0
0.1
Fig.5. Switching times test circuit.
July 1999
1
IC / A
10
Fig.8. Typical collector-emitter saturation voltage.
3
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4506AF
VBESAT / V
Ths = 25 C
Normalised Power Derating
PD%
120
1.2
with heatsink compound
110
Ths = 85 C
1.1
100
90
1
80
70
60
0.9
50
IC = 3 A
40
0.8
30
20
0.7
10
0
0.6
0
0
1
2
3
IB / A
20
40
4
60
80
Ths / C
100
120
140
Fig.11. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C
Fig.9. Typical base-emitter saturation voltage.
ts/tf/ us
10
ICsat = 3 A
Ths = 85 C
Freq = 16 kHz
8
BU4506DF/DX
`Zth (K/W)
10
D = 0.5
1
6
0.2
0.1
0.05
0.1
4
0.02
PD
D=0
tp
D = tp/T
0.01
2
T
0
0
0.5
1
1.5
IB / A
0.001
1E-06
2
Fig.10. Typical collector storage and fall time.
IC =3 A; Tj = 85˚C; f = 16kHz
July 1999
1E-05
1E-04
1E-03 1E-02
t/s
t
1E-01 1E+00 1E+01
Fig.12. Transient thermal impedance.
4
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4506AF
MECHANICAL DATA
Dimensions in mm
15.3 max
Net Mass: 5.5 g
5.2 max
3.1
3.3
0.7
7.3
3.2
o
45
6.2
5.8
21.5
max
seating
plane
3.5 max
not tinned
3.5
15.7
min
1
2
2.1 max
5.45
3
1.2
1.0
0.7 max
0.4 M
2.0
5.45
Fig.13. SOT199; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
July 1999
5
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4506AF
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
July 1999
6
Rev 1.000
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