EIC7785-5 7.70-8.50GHz 5-Watt Internally-Matched Power FET UPDATED 08/21/2007 FEATURES • • • • • • • 7.70–8.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +37.5 dBm Output Power at 1dB Compression 8.5 dB Power Gain at 1dB Compression 34% Power Added Efficiency -49 dBc IM3 at PO = 26.5 dBm SCL 100% Tested for DC, RF, and RTH Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) PARAMETERS/TEST CONDITIONS1 SYMBOL P1dB G1dB ∆G PAE Output Power at 1dB Compression f = 7.70-8.50GHz VDS = 10 V, IDSQ ≈ 1600mA Gain at 1dB Compression f = 7.70-8.50GHz VDS = 10 V, IDSQ ≈ 1600mA Gain Flatness f = 7.70-8.50GHz VDS = 10 V, IDSQ ≈ 1600mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 1600mA f = 7.70-8.50GHz MIN TYP MAX 36.5 37.5 dBm 7.5 8.5 dB ±0.6 dB 34 f = 7.70-8.50GHz % Id1dB Drain Current at 1dB Compression IM3 Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 26.5 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 8.50GHz IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V 2900 3500 VP Pinch-off Voltage 1600 VDS = 3 V, IDS = 30 mA -2.5 -4.0 Opt-01 -42 -45 Opt-02 -46 -49 3 Thermal Resistance RTH UNITS 5.0 1900 mA dBc 5.5 mA V o C/W Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING FOR EFE SYMBOLS Vds Vgs Igf Igr Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 CONTINUOUS2 15V 10V -5V -4V 68mA 20.4mA -13.6mA -3.4mA 37dBm @ 3dB Compression 175C 175C -65C to +175C -65C to +175C 27W 27W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 4 Revised October 2007 EIC7785-5 7.70-8.50GHz 5-Watt Internally-Matched Power FET UPDATED 08/21/2007 PERFORMANCE DATA Typical S-Parameters (T= 25°C, 50Ω system, de-embedded to edge of package) VDS = 10 V, IDSQ ≈ 1600mA S11 and S22 1.0 0. 8 6 2. 0 0. S21 and S12 10 Swp Max 8.7GHz 0 4 4. 0 0 S21 and S12 (dB) 0. 3. 5.0 0.2 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0 0.2 10.0 -10.0 2 - 0. -1.0 -0 .8 .0 -30 7.5 -2 .6 -0 --- S11 --- .0 FREQ S[2,2] EIC7785-5 -20 -3 S[1,1] EIC7785-5 .4 DB(|S[1,2]|) EIC7785-5 -10 -4 .0 - 5. 0 -0 DB(|S[2,1]|) EIC7785-5 7.8 8.1 Frequency (GHz) Swp Min 7.5GHz --- S21 --- --- S12 --- 8.4 8.7 --- S22 --- (GHz) MAG ANG MAG ANG MAG ANG MAG ANG 7.5 0.6072 151.65 2.4887 -96.64 0.0877 -140.79 0.3974 63.69 7.6 0.5668 139.93 2.5636 -108.26 0.0935 -152.21 0.399 51.15 7.7 0.5301 127.41 2.6446 -120.35 0.0984 -164.2 0.3981 38.7 7.8 0.4896 113.26 2.7096 -132.52 0.1039 -176.06 0.392 26.7 7.9 0.4497 98.49 2.7726 -145.04 0.1085 171.35 0.378 14.39 8 0.4085 82.47 2.8207 -157.79 0.1123 158.96 0.3592 1.76 8.1 0.3689 64.87 2.8563 -170.82 0.1168 146.5 0.3329 -11.65 8.2 0.331 45.51 2.8892 175.98 0.1211 133.84 0.3001 -26.37 8.3 0.2961 23.89 2.888 162.68 0.1237 121.11 0.2676 -43.46 8.4 0.2689 -0.24 2.8767 149.22 0.1251 107.74 0.2323 -63 8.5 0.2517 -26.44 2.8389 135.66 0.1254 94.86 0.2034 -87.46 8.6 0.2485 -54.31 2.7741 122.25 0.1254 81.38 0.1942 -116.35 8.7 0.2603 -81 2.7202 108.74 0.1226 67.75 0.2049 -145.47 Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 4 Revised October 2007 EIC7785-5 7.70-8.50GHz 5-Watt Internally-Matched Power FET UPDATED 08/21/2007 Power De-rating Curve and IM3 Definition Power Dissipation vs. Temperature THIRD-ORDER INTERCEPT POINT IP3 30 IP3 = Pout + IM3/2 Potentially Unsafe Operating Region 20 15 Safe Operating Region 10 f1 or f2 Pout [S.C.L.] (dBm) Total Power Dissipation (W) 25 Pout IM3 Pin IM3 f1 f2 (2f1-f2) f1 f2 (2f2-f1) (2f2 - f1) or (2f1 - f2) 5 0 25 50 75 100 125 Case Temperature (°C) 150 175 Pin [S.C.L.] (dBm) Typical Power Data (VDS = 10 V, IDSQ = 1600 mA) P-1dB & G-1dB vs Frequency 38 10 37 9 36 8 35 7 P-1dB (dBm) G-1dB (dB) 34 6 7.6 7.8 8.0 8.2 Frequency (GHz) 8.4 IM3 vs Output Power 11 8.6 f1 = 8.50 GHz, f2 = 8.51 GHz -15 -20 -25 G-1dB (dB) P-1dB (dBm) 39 Typical IM3 Data (VDS = 10 V, IDSQ ≈ 65% IDSS) IM3 (dBc) 0 -30 -35 -40 -45 -50 -55 IM3 (dBc) -60 21 22 23 24 25 26 27 28 29 30 31 32 33 Pout [S.C.L.] (dBm) Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 3 of 4 Revised October 2007 EIC7785-5 7.70-8.50GHz 5-Watt Internally-Matched Power FET UPDATED 08/21/2007 PACKAGES OUTLINE Dimensions in inches, Tolerance + .005 unless otherwise specified EIC7785-5 (Hermetic) Excelics EIC7785-5NH (Non-Hermetic) Excelics .024 EIC7785-5 .827±.010 .669 EIC7785-5NH .421 .120 MIN .120 MIN YYWW YYWW SN SN .004 .125 .063 .508±.008 .442 .004 .168±.010 .105±.008 ALL DIMENSIONS IN INCHES ALL DIMENSIONS IN INCHES Caution! ESD sensitive device. Caution! ESD sensitive device. ORDERING INFORMATION Part Number Packages Grade1 fTest (GHz) P1dB (min) IM3 (min)2 EIC7785-5-01 Hermetic Industrial 7.70-8.50GHz 36.5 -42 EIC7785-5NH-01 Non-Hermetic Industrial 7.70-8.50GHz 36.5 -42 EIC7785-5-02 Hermetic Industrial 7.70-8.50GHz 36.5 -46 EIC7785-5NH-02 Non-Hermetic Industrial 7.70-8.50GHz 36.5 -46 Notes: 1. Contact factory for military and hi-rel grades. 2. Exact test conditions are specified in “Electrical Characteristics” table. DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 4 of 4 Revised October 2007