EMG9 / UMG9N / FMG9A Transistors Emitter common (dual digital transistors) EMG9 / UMG9N / FMG9A !External dimensions (Units : mm) !Features 1) Two DTC114E in a EMT or UMT or SMT package. 2) Mounting cost and area can be cut in half. (3) (4) (2) (5) (1) 0.5 0.13 !Structure Epitaxial planar type NPN silicon transistor (Built-in resistor type) 1.2 1.6 0.5 0.5 1.0 1.6 0.22 EMG9 Each lead has same dimensions ROHM : EMT5 Abbreviated symbol : G9 2.0 (2) (1) 1.3 (3) (4) 0.2 0.65 0.65 UMG9N (6) The following characteristics apply to both the DTr1 and DTr2. 1.25 0to0.1 0.7 0.15 0.1Min. R2 (2) Each lead has same dimensions ROHM : UMT5 EIAJ : SC-88A Abbreviated symbol : G9 FMG9A (1) (5) (1) (4) 0.3 (5)/(6) R2 (5) R1=10kΩ R1 R2=10kΩ DTr1 2.9 R1 DTr2 (4) 1.1 (4) R2 (3) 0.8 R2 (1) R1=10kΩ R1 R2=10kΩ DTr1 (3) R1 DTr2 (2) 0.95 0.95 1.9 (3) FMG9A (2) EMG9 / UMG9N 0.9 2.1 !Equivalent circuit 1.6 !Absolute maximum ratings (Ta = 25°C) Limits Unit VCC 50 V 0.3to0.6 Supply voltage Input voltage Output current VIN 40 −10 IO 50 IC (Max.) 100 150 (TOTAL) Each lead has same dimensions ROHM : SMT5 EIAJ : SC-74A V Abbreviated symbol : G9 mA EMG9, UMG9N Power dissipation FMG9A Pd Junction temperature Tj 150 ˚C Storage temperature Tstg −55∼+150 ˚C mW 300 (TOTAL) ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. 0to0.1 Symbol 0.15 Parameter 2.8 ∗1 ∗2 EMG9 / UMG9N / FMG9A Transistors !Electrical characteristics (Ta = 25°C) Parameter Input voltage Output voltage Symbol Min. Typ. Max. VI (off) − − 0.5 VI (on) 3 − − VO (on) − 0.1 0.3 V II − − 0.88 mA IO (off) − − 0.5 µA VCC=50V, VI=0V GI 30 − − − VO=5V, IO=5mA Input current Output current DC current gain Unit V Conditions VCC=5V, IO=100µA VO=0.3V, IO=10mA IO=10mA, II=0.5mA VI=5V Transition frequency fT − 250 − MHz Input resistance R1 7 10 13 kΩ − Resistance ratio R2/R1 0.8 1.0 1.2 − − ∗ VCE=10mA, IE=−5mA, f=100MHz ∗ Transition frequency of the device !Packaging specifications Package Type Taping Code T2R TR T148 Basic ordering unit (pieces) 8000 3000 3000 EMG9 UMG9N FMG9A !Electrical characteristic curves 10m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI (on) (V) 20 10 5 2 Ta=−40˚C 25˚C 100˚C 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m Fig.1 Input voltage vs. output current (ON characteristics) 1 lO/lI=20 500m OUTPUT VOLTAGE : VO (on) (V) 2m 1m 500µ Ta=100˚C 25˚C −40˚C 200m 100m 50m 20m 10m 5m 2m 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current VO=5V 500 Ta=100˚C 25˚C −40˚C 200µ 100µ 50µ 20µ 10µ 200 Ta=100˚C 25˚C −40˚C 100 50 20 10 5 5µ 2 2µ OUTPUT CURRENT : IO (A) 1m 100µ 200µ 1k VCC=5V 5m 50 DC CURRENT GAIN : GI 100 1µ 0 0.5 1.0 1.5 2.0 2.5 INPUT VOLTAGE : VI (off) (V) Fig.2 Output current vs. input voltage (OFF characteristics) 3.0 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current