CM150DU-24NFH Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBTMOD™ NFH-Series Module 150 Amperes/1200 Volts TC MEASUREMENT POINT A D N M K C2E1 K E2 F E C1 E2 G2 S B G1 E1 H G F P - NUTS (3 TYP) Q - (2 TYP) W V W W X Y W R J Description: Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Z V T U C LABEL L G2 E2 C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 3.70 94.0 B 1.89 48.0 C 1.18+0.04/-0.01 30.0+1.0/-0.5 D 3.15±0.01 80.0±0.25 E 0.43 11.0 F 0.16 4.0 G 0.71 18.0 H 0.51 13.0 J 0.53 13.5 K 0.91 23.0 L 0.83 21.2 M 0.67 17.0 Rev. 11/09 Dimensions N P Q R S T U V W X Y Z Inches 0.28 M5 Metric 0.26 Dia. 0.02 0.94 0.3 0.33 0.63 0.1 0.98 0.47 0.11 Millimeters 7.0 M5 Dia. 6.5 4.0 24.0 7.5 8.5 16.0 2.5 25.0 12.0 2.8 Features: £ Low ESW(off) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ Power Supplies £ Induction Heating £ Welders Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM150DU-24NFH is a 1200V (VCES), 150 Ampere Dual IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 150 24 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM150DU-24NFH Dual IGBTMOD™ NFH-Series Module 150 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM150DU-24NF Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 1200 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts IC 150* Amperes ICM 300* Amperes Collector Current (TC = 25°C) Peak Collector Current Emitter Current** (TC = 25°C) IE 150* Amperes IEM 300* Amperes Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) PC 650 Watts Maximum Collector Dissipation (TC' = 25°C, Tj' ≤ 150°C) PC 960 Watts Mounting Torque, M5 Main Terminal — 30 in-lb Mounting Torque, M6 Mounting — 40 in-lb — 310 Grams VISO 2500 Volts Peak Emitter Current** Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 15mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 150A, VGE = 15V, Tj = 25°C — 5.0 6.5 Volts IC = 150A, VGE = 15V, Tj = 125°C — 5.0 — Volts Total Gate Charge QG VCC = 600V, IC = 150A, VGE = 15V — 680 — nC Emitter-Collector Voltage** VEC IE = 150A, VGE = 0V — — 3.5 Volts Min. Typ. Max. Units — — 24 nf — — 2.0 nf — — 0.45 nf Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Inductive Turn-on Delay Time td(on) Load Rise Time Switch Turn-off Delay Time Time Fall Time Test Conditions VCE = 10V, VGE = 0V — — 150 ns VCC = 600V, IC = 150A, — — 80 ns td(off) VGE1 = VGE2 = 15V, RG = 2.1Ω, — — 400 ns tf Inductive Load Switching Operation, — — 150 ns Diode Reverse Recovery Time** trr IE = 150A — — 150 ns Diode Reverse Recovery Charge** Qrr — 7.5 — µC tr * Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Rev. 11/09 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM150DU-24NFH Dual IGBTMOD™ NFH-Series Module 150 Amperes/1200 Volts Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module, TC Reference — — 0.19 °C/W Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module, TC Reference — — 0.35 °C/W Thermal Resistance, Junction to Case Rth(j-c)'Q Per IGBT 1/2 Module, — — 0.13 °C/W Thermal Resistance, Junction to Case Rth(j-c)'D Per FWDi 1/2 Module, TC Reference — — 0.21 °C/W Rth(c-f) Per 1/2 Module, Thermal Grease Applied — 0.07 — °C/W 2.1 — 21 Ω Point per Outline Drawing Point per Outline Drawing TC Reference Point Under Chips Point per Outline Drawing Contact Thermal Resistance External Gate Resistance RG OUTPUT CHARACTERISTICS (TYPICAL) 12 200 150 11 100 10 50 9 0 8 0 4 6 8 250 200 150 100 50 0 10 5 0 7 6 5 4 3 2 1 0 20 15 10 VGE = 15V Tj = 25C Tj = 125C 8 50 0 100 150 200 250 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 IC = 300A 8 6 IC = 150A 4 IC = 60A 2 0 6 8 10 12 14 16 18 GATE-EMITTER VOLTAGE, VGE, (VOLTS) Rev. 11/09 20 102 Tj = 25C Tj = 125C Tj = 25C CAPACITANCE, Cies, Coes, Cres, (nF) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 2 9 VGE = 10V Tj = 25C Tj = 125C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 13 15 250 300 14 VGE = 20V COLLECTOR CURRENT, IC, (AMPERES) Tj = 25oC EMITTER CURRENT, IE, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 300 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 102 101 0 1 2 3 4 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 5 300 VGE = 0V Cies 101 Coes 100 Cres 10-1 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM150DU-24NFH Dual IGBTMOD™ NFH-Series Module 150 Amperes/1200 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(on) 101 VCC = 600V VGE = 15V RG = 2.1Ω Tj = 125°C Inductive Load tr 102 102 102 Irr trr 101 101 103 102 VCC = 400V VCC = 600V 12 8 4 0 0 200 400 600 800 1000 GATE CHARGE, QG, (nC) SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT (TYPICAL) VCC = 600V VGE = 15V RG = 2.1Ω Tj = 125°C Inductive Load C Snubber at Bus ESW(on) ESW(off) 100 10-1 101 102 103 102 101 ESW(on) ESW(off) 100 100 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) 102 100 10-1 101 Err VCC = 600V VGE = ±15V IE = 150A Tj = 125°C Inductive Load C Snubber at Bus 10-2 101 GATE RESISTANCE, RG, (Ω) 102 VCC = 600V VGE = ±15V IC = 150A Tj = 125°C Inductive Load C Snubber at Bus 101 102 GATE RESISTANCE, RG, (Ω) REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) 16 EMITTER CURRENT, IE, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 4 IC = 150A COLLECTOR CURRENT, IC, (AMPERES) 101 100 100 101 103 REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 100 101 VCC = 600V VGE = 15V RG = 2.1Ω Tj = 25°C Inductive Load 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) tf GATE CHARGE VS. VGE 103 REVERSE RECOVERY CURRENT, Irr, (AMPERES) td(off) REVERSE RECOVERY TIME, trr, (ns) 102 103 SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) SWITCHING TIME, (ns) 103 REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 10-3 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 10-2 10-1 100 Err 101 100 101 VCC = 600V VGE = ±15V RG = 2.1Ω Tj = 125°C Inductive Load C Snubber at Bus 102 103 EMITTER CURRENT, IE, (AMPERES) 101 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.19°C/W (IGBT) Rth(j-c) = 0.35°C/W (FWDi) 10-2 10-5 10-4 10-3 10-3 TIME, (s) Rev. 11/09