CREE C460UT200-0201 Cree ultrathin led Datasheet

Cree® UltraThin™ LED
Data Sheet
CxxxUT200-Sxxxx
Cree’s UltraThin LEDs combine highly efficient InGaN materials with Cree’s proprietary G•SiC® substrate to deliver
superior price/performance for blue LEDs. These vertically structured LED chips are small in size and require a low
forward voltage. Cree’s UT™ series chips are tested for conformity to optical and electrical specifications and the
ability to withstand 1000 V ESD. Applications include keypad backlighting where sub-miniaturization and thinner
form factors are required.
FEATURES
APPLICATIONS
•
Small Chip – 200 x 200 x 85 μm
•
Mobile Phone Keypads
•
UT LED Performance
•
Audio Product Display Lighting
–
•
Mobile Appliance Keypads
•
Automotive Applications
•
5.5 mW min. (455–475 nm) Blue
Low Forward Voltage
–
2.9 V Typical at 5 mA
•
Single Wire Bond Structure
•
Class 2 ESD Rating
CxxxUT200-Sxxxx Chip Diagram
.CPR3DE Rev
Data Sheet:
Top View
Bottom View
G•SiC LED Chip
200 x 200 μm
Die Cross Section
SiC Substrate
Bottom Surface
115 x 115 μm
Mesa (junction)
150 x 150 μm
Gold Bond Pad
90 μm Diameter
InGaN
Anode (+)
SiC Substrate
h = 85 μm
Backside
Metallization
80 x 80 μm
Subject to change without notice.
www.cree.com
Cathode (-)
Maximum Ratings at TA = 25°C Notes 1&3
CxxxUT200-Sxxxx
DC Forward Current
30 mA
Peak Forward Current (1/10 duty cycle @ 1 kHz)
100 mA
LED Junction Temperature
125°C
Reverse Voltage
5V
Operating Temperature Range
-40°C to +100°C
Storage Temperature Range
Electrostatic Discharge Threshold (HBM)
-40°C to +100°C
1000 V
Note 2
Electrostatic Discharge Classification (MIL-STD-883E)
Class 2
Note 2
Typical Electrical/Optical Characteristics at TA = 25°C, If = 5 mA
Part Number
Forward Voltage (Vf, V)
Note 3
Reverse Current
[I(Vr=5 V), μA]
Full Width Half Max
(λD, nm)
Min.
Typ.
Max.
Max.
Typ.
C460UT200-Sxxxx
2.7
2.9
3.1
2
21
C470UT200-Sxxxx
2.7
2.9
3.1
2
22
Mechanical Specifications
Description
CxxxUT200-Sxxxx
Dimension
Tolerance
P-N Junction Area (μm)
150 x 150
± 25
Top Area (μm)
200 x 200
± 25
Bottom Area (Substrate) (μm)
115 x 115
± 25
85
± 10
Au Bond Pad Diameter (μm)
90
-5, +15
Au Bond Pad Thickness (μm)
1.2
± 0.5
80 x 80
± 25
Chip Thickness (μm)
Back Contact Metal Area (μm)
Notes:
1.
2.
3.
4.
Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000
epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die
but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1
3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing
temperature must not exceed 325°C (< 5 seconds).
Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche
energy test (RAET). The RAET procedures are designed to approximate the minimum ESD ratings shown. The ESD classification of
Class 2 is based on sample testing according to MIL-STD-883E.
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 5 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by manufacturer in large quantities and are provided for information only. All
measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Optical characteristics measured in an
integrating sphere using Illuminance E.
Caution: To obtain optimum output efficiency, the amount of epoxy used should be characterized based upon the specific
application.
Copyright © 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc.
CPR3DE Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Standard Bins for CxxxUT200-Sxxxx
LED chips are sorted to the radiant flux and dominant wavelength bins shown. Sorted die sheets contain die from
only one bin. Sorted die kit (CxxxUT200-Sxxxx) orders may be filled with any or all bins (CxxxUT200-xxxx) contained
in the kit. All radiant flux values are measured at If = 20 mA and all dominant wavelength values are measured at If =
5 mA.
UT-5.5
Radiant Flux
Radiant Flux
C460UT200-S0550
8.0 mW
8.0 mW
C460UT200-0201
5.5 mW
455 nm
C460UT200-0202
457.5 nm
C460UT200-0203
460 nm
Dominant Wavelength
C460UT200-0204
462.5 nm
465 nm
C470UT200-S0550
C470UT200-0201
5.5 mW
465 nm
C470UT200-0202
467.5 nm
C470UT200-0203
470 nm
Dominant Wavelength
C470UT200-0204
472.5 nm
475 nm
UT-8.0
Radiant Flux
C460UT200-S0800
C460UT200-0205
8.0 mW
455 nm
C460UT200-0206
457.5 nm
C460UT200-0207
460 nm
Dominant Wavelength
C460UT200-0208
462.5 nm
465 nm
Radiant Flux
C470UT200-S0800
C470UT200-0205
8.0 mW
465 nm
C470UT200-0206
467.5 nm
C470UT200-0207
470 nm
Dominant Wavelength
C470UT200-0208
472.5 nm
Copyright © 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc.
CPR3DE Rev. -
475 nm
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Characteristic Curves
These are representative measurements for the UT200 product. Actual curves will vary slightly for the various radiant
flux and dominant wavelength bins.
Wavelength Shift vs Forward Current
Forward Current vs Forward Voltage
8.0
30
25
4.0
Shift (nm)
If (mA)
20
15
10
0.0
-4.0
5
0
0.0
1.0
2.0
3.0
4.0
-8.0
5.0
0
5
10
15
Vf (V)
Relative Intensity vs Forward Current
30
100%
Relative Intensity (%)
400
% Relative Intensity
25
Relative Intensity vs. Peak Wavelength
450
350
300
250
200
150
100
50
0
80%
60%
40%
20%
0%
0
5
10
15
20
25
30
320
360
400
440
If (mA)
Copyright © 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc.
20
If (mA)
CPR3DE Rev. -
480
520
560
600
640
680
Wavelength (nm)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Radiation Pattern
This is a representative radiation pattern for the UltraThin Chip LED product. Actual patterns will vary slightly for each
chip.
Copyright © 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc.
CPR3DE Rev. -
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
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