Fairchild FDS6680AS 30v n-channel powertrench syncfet Datasheet

FDS6680AS
30V N-Channel PowerTrench® SyncFET™
General Description
Features
The FDS6680AS is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON)
and low gate charge.
The FDS6680AS
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDS6680AS as the low-side switch in a
synchronous rectifier is indistinguishable from the
performance of the FDS6680 in parallel with a Schottky
diode.
•
11.5 A, 30 V.
tm
RDS(ON) max= 10.0 mΩ @ VGS = 10 V
RDS(ON) max= 12.5 mΩ @ VGS = 4.5 V
•
Includes SyncFET Schottky body diode
•
Low gate charge (22nC typical)
•
High performance trench technology for extremely low
RDS(ON) and fast switching
•
Applications
High power and current handling capability
• DC/DC converter
• Low side notebooks
D
D
D
D
SO-8
S
S
S
G
Absolute Maximum Ratings
Symbol
5
4
6
3
7
2
8
1
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
11.5
A
– Continuous
(Note 1a)
– Pulsed
PD
Power Dissipation for Single Operation
50
(Note 1a)
2.5
(Note 1b)
1.2
(Note 1c)
TJ, TSTG
W
1
–55 to +150
°C
(Note 1a)
50
°C/W
(Note 1)
25
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6680AS
FDS6680AS
13’’
12mm
2500 units
©2008 Fairchild Semiconductor Corporation
FDS6680AS Rev B2(X)
FDS6680AS 30V N-Channel PowerTrench® SyncFET™
May 2008
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 1 mA
Zero Gate Voltage Drain Current
VDS = 24 V,
VGS = 0 V
500
µA
Gate–Body Leakage
VGS = ±20 V,
VDS = 0 V
±100
nA
3
V
On Characteristics
30
V
26
ID = 10 mA, Referenced to 25°C
mV/°C
(Note 2)
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
VDS = VGS, ID = 1 mA
ID(on)
On–State Drain Current
VGS = 10 V,
VDS = 5 V
gFS
Forward Transconductance
VDS = 15 V,
ID = 11.5 A
1
1.5
ID = 10 mA, Referenced to 25°C
–4
VGS = 10 V,
ID = 11.5 A
VGS = 4.5 V,
ID = 9.5 A
VGS=10 V, ID =11.5A, TJ=125°C
8.4
10.3
12.3
mV/°C
10.0
12.5
15.5
50
mΩ
A
48
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
1240
pF
350
pF
120
pF
Ω
VGS = 15 mV,
f = 1.0 MHz
1.4
9
18
ns
VDS = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
5
10
ns
(Note 2)
VDS = 15 V,
VGS = 4.5 V,
ID = 1 A,
RGEN = 6 Ω
27
42
ns
11
21
ns
11
20
ns
12
22
ns
td(off)
Turn–Off Delay Time
18
32
ns
tf
Turn–Off Fall Time
11
20
ns
Qg(TOT)
Total Gate Charge at Vgs=10V
22
30
nC
Qg
Total Gate Charge at Vgs=5V
12
16
Qgs
Gate–Source Charge
3.5
nC
Qgd
Gate–Drain Charge
3.4
nC
VDD = 15 V,
ID = 11.5 A,
nC
FDS6680AS Rev B2(X)
FDS6680AS 30V N-Channel PowerTrench® SyncFET™
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Unit
3.5
A
0.7
V
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Trr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
VGS = 0 V,
VGS = 0 V,
IF = 11.5A,
Qrr
Diode Reverse Recovery Charge
diF/dt = 300 A/µs
IS = 3.5 A
IS = 7 A
(Note 2)
(Note 2)
(Note 3)
0.5
0.6
18
12
nS
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°/W when
mounted on a 1 in2
pad of 2 oz copper
b) 105°/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
FDS6680AS Rev B2(X)
FDS6680AS 30V N-Channel PowerTrench® SyncFET™
Electrical Characteristics
2
50
VGS = 10V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
3.5V
4.0V
6.0V
ID, DRAIN CURRENT (A)
40
4.5V
3.0V
30
20
2.5V
10
1.6
3.5V
1.4
4.0V
4.5V
1.2
0
6.0V
10.0V
1
0.4
0.8
1.2
1.6
VDS, DRAIN-SOURCE VOLTAGE (V)
0
2
Figure 1. On-Region Characteristics.
10
20
30
ID, DRAIN CURRENT (A)
40
50
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.4
0.05
ID = 11.5A
VGS = 10V
RDS(ON), ON-RESISTANCE (OHM)
ID = 6A
1.2
1
0.8
0.04
0.03
o
0.02
TA = 125 C
0.01
o
TA = 25 C
0
0.6
-50
-25
0
25
50 o
TJ, JUNCTION TEMPERATURE ( C)
75
2
100
Figure 3. On-Resistance Variation with
Temperature.
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
50
10
VGS = 0V
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
40
ID, DRAIN CURRENT (A)
5.0V
0.8
0
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 3.0V
1.8
30
TA = 125oC
20
-55oC
10
o
25 C
1
TA = 125oC
0.1
25oC
0.01
o
-55 C
0.001
0.0001
0
1
1.5
2
2.5
3
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
0
0.2
0.4
0.6
VSD, BODY DIODE FORWARD VOLTAGE (V)
0.8
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6680AS Rev B2(X)
FDS6680AS 30V N-Channel PowerTrench® SyncFET™
Typical Characteristics
1800
f = 1MHz
VGS = 0 V
ID =11.5A
1500
VDS = 10V
8
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
20V
6
15V
4
2
1200
Ciss
900
600
Coss
300
Crss
0
0
0
5
10
15
Qg, GATE CHARGE (nC)
20
0
25
Figure 7. Gate Charge Characteristics.
10
15
20
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
50
100
P(pk), PEAK TRANSIENT POWER (W)
1000
RDS(ON) LIMIT
100µs
1ms
10ms
10
100ms
1s
10s
1
DC
VGS = 10V
SINGLE PULSE
RθJA = 125oC/W
0.1
o
TA = 25 C
0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
40
30
20
10
0
0.01
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
ID, DRAIN CURRENT (A)
5
0.1
1
10
t1, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA = 125 °C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
0.01
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6680AS Rev B2(X)
FDS6680AS 30V N-Channel PowerTrench® SyncFET™
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
0.1
3A/DIV
IDSS, REVERSE LEAKAGE CURRENT (A)
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky
diode in parallel with a MOSFET. Figure 12 shows the
reverse recovery characteristic of the FDS6680AS.
TA = 125oC
0.01
0.001
TA = 100oC
0.0001
0.00001
TA = 25oC
0.000001
0
10nS/DIV
5
10
15
20
VDS, REVERSE VOLTAGE (V)
25
30
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
Figure 12. FDS6680AS SyncFET body diode
reverse recovery characteristic.
Current: 3A/div
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6680).
0
10nS/div
Figure 13. Non-SyncFET (FDS6680) body
diode reverse recovery characteristic.
FDS6680AS Rev B2(X)
FDS6680AS 30V N-Channel PowerTrench® SyncFET™
Typical Characteristics (continued)
L
VDS
BVDSS
tP
VGS
RGE
+
DUT
VGS
VDS
IAS
VDD
VDD
-
0V
tp
vary tP to obtain
required peak IAS
IAS
0.01Ω
tAV
Figure 15. Unclamped Inductive Load Test
Circuit
Figure 16. Unclamped Inductive
Waveforms
Drain Current
Same type as
+
50kΩ
10V
-
10µF
+
1µF
VDD
-
VGS
QG(TOT)
10V
DUT
QGD
QGS
VGS
Ig(REF
Charge, (nC)
Figure 17. Gate Charge Test Circuit
Figure 18. Gate Charge Waveform
tON
VDS
VGS
RGEN
td(ON)
RL
VDS
tr
90%
tOFF
td(OFF
tf
)
90%
+
VDD
DUT
VGSPulse Width ≤ 1µs
Duty Cycle ≤ 0.1%
Figure 19. Switching Time Test
Circuit
-
10%
0V
90%
VGS
0V
10%
50%
10%
50%
Pulse Width
Figure 20. Switching Time Waveforms
FDS6680AS Rev B2(X)
FDS6680AS 30V N-Channel PowerTrench® SyncFET™
Typical Characteristics
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
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Rev. I34
FDS6680AS Rev B2(X)
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